Decay kinetics of the green emission in tungstates and molybdates

Luminescence characteristics of a number of undoped and variously doped PbWO₄ crystals were studied at 0.4–400 K by the time-resolved spectroscopy and compared with those of ZnWO₄,CdWO₄ and PbMoO₄ crystals. Two types of green emission centres are detected in PbWO₄ crystals. The centres of the first type are responsible for the low-temperature 2.3–2.4 eV emission observed under excitation around 3.90–3.95 eV. The structure and parameters of their relaxed excited states were determined. It was concluded that the origin of defects responsible for the green emission of the first type could vary for different crystals. The centres of the second type with the emission around 2.5 eV appear in crystals containing oxygen vacancies after the thermal destruction of Pb⁺-WO₃ centres at T>180 K. Decomposition of the exciton and various defect-related states was also studied, and activation energies of this process were calculated.     

Rare earth photoionization study by the resonant microwave cavity technique

Photoconductivity spectra of rare earth-doped insulating materials are measured using the resonant microwave cavity method. This technique is based on the detection of the cavity Q-factor changes induced by irradiation of the sample (inserted in the cavity) by a pulsed tunable laser. Results obtained with Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺ are presented and discussed. Photoionization thresholds at 400 nm (3.1 eV) and 310 nm (4.0 eV) are measured for Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺, respectively.     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

Strangeness saturation: Dependence on system-size, centrality and energy

The dependence of the strangeness saturation factor on the system size, centrality and energy is studied in relativistic heavy-ion collisions.     

A realistic coronary artery phantom for particle image velocimetry

Myocardial infarction results from the rupture of an atherosclerotic plaque, which occurs in response to both mechanical stress and inflammatory processes. In order experimentally observe flow into atherosclerotic coronary artery morphologies, a novel technique for molding realistic compliant phantom featuring injection-molded inclusions and multiple layers has been developed. This transparent phantom allows for particle image velocimetry (PIV) flow analysis and can supply experimental data to validate computational fluid dynamics algorithms and hypothesis.     

Real-time color holographic interferometry devoted to 2D unsteady wake flows

A new optical technique based on real time holographic interferometry in true colors has been implemented around the transonic wind tunnel of the ONERA-Lille center to analyze 2D unsteady wake flows. Tests realized in color interferometry, real time and double exposure, use simultaneously three wavelengths of a continuous waves laser (argon and krypton mixed) and holograms are recorded on silver-halide single-layer panchromatic Slavich PFG03c plates. The very principle of real-time true color holographic interferometry uses three primary wavelengths (red, green and blue) to record, under no-flow conditions, the interference among the three measurement beams and the three reference beams simultaneously on a single reference hologram. After the holographic plate is developed, it is placed on the test setup again in the position it occupied during exposure and the hologram is illuminated again by the three reference beams and three measurement beams. A flat, uniform color can then be observed behind the hologram. So a horizontal, vertical, or even circular fringe pattern can be formed and the achromatic central fringe can be made out very clearly. The single color is used to determine the path difference zero on the interferograms. The flow studied was the unsteady flow downstream of a cylinder placed crosswise in the test section. A sequence of hundred interferograms was recorded on the flow around the cylinder at Mach 0.37. The vortex formation and dissipation phases can be seen very clearly, along with the fringe beat to either side of the cylinder.     

The glow curve structure for the LiF:Mg,Cu,Na,Si TL detector with dopants concentrations and sintering temperatures

The glow curve structures for LiF:Mg,Cu,Na,Si TL detectors with various dopant concentrations and sintering temperatures were investigated for the improvement of the glow curve structure and sensitivity of the TL detector. The dopant concentrations were varied over the following ranges: Mg (0–0.25 mol%), Cu (0–0.07 mol%), Na and Si (0–1.5 mol%). With increasing Cu concentration, the intensity of the main peak was intensified and reached a maximum at a concentration of 0.05 mol%. The high-temperature peak was reduced. The dependency of the main peak intensity on the Mg concentration exhibits a sharp maximum at 0.2 mol%. The intensity of the high-temperature peak tends to rise slightly with increasing Mg concentration. It was found that the optimum concentrations of the dopants in the LiF:Mg,Cu,Na,Si TL material are Mg: 0.2 mol%, Cu: 0.05 mol%, Na and Si: 0.9 mol%. The dependency of the main peak intensity on sintering temperature exhibits a very sharp maximum at 830°C. The high-temperature peak was rapidly reduced after 825°C.     

Luminescence and lifetime characteristics of microphases in KCl:KI:Pb mixed crystals

Absorption and luminiscence measurements were performed on lead-doped KCl:KI mixed single crystals. Strong differences were found between as-grown and quenched samples. New bands were observed in the absorption spectra of unquenched samples in the spectral region between the limit positions of the A bands, corresponding to chloride or iodide lattices. The strong band at 449 nm dominates the luminescence of these samples at low temperatures. Its kinetics have a complicated form and the decay time is in the interval from ns to ms. Quenched samples have a well-known luminescence spectrum caused by octahedral lead impurity centres in KCl single crystals. The kinetics, however, also indicate mixed chlorine and iodine coordination of lead in the investigated crystals.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.