Roughness reduction in submicron waveguides by low-molecular weight development

Roughness reduction of a submicron waveguide profile in chemically amplified negative resist is here performed by proper selection of an alkali-based developer, taking into account that its smaller molecules lead to smoother resist surface by altering the developing mechanism of aggregate extraction performed with standard quaternary ammonium hydroxide. Roughness is then analyzed by means of classical Atomic Force Microscope inspection; furthermore, a non-invasive line edge roughness analysis approach based on top-down scanning electron microscope acquisition gives comparable results, in terms of standard deviation and molecular aggregate periodicity.     

Revealing the common sources of commercial explosive-containing articles

A method for identification of explosive-containing commercial articles is suggested. The method is based on chromatographic analysis of petroleum products present in the articles as process admixtures and structural components.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

X-ray metrology for advanced silicon processes

X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/porous low κ processes, which are developed for the next generation (≤65 nm) integrated circuits. Sensitivity of XRR and XRF is sufficient to detect drifts of the copper barrier layer, copper seed layer and Cu CMP (chemical-mechanical polishing) processes. Their metrology key parameters comply with production requirements. SAXS allows determining the pore structure of low κ films: average pore size and pore size distribution.     

Micromagnetic analysis of transition noise for high-density perpendicular recording

In this paper, specific issues related to high-density perpendicular magnetic recording processes, such as transition noise properties and cross-track correlation lengths, were investigated with the help of micromagnetic analysis. The effects of media parameters were taken into consideration, including intergranular exchange coupling, and exchange distribution, irregular grain shapes, magnetization saturation distribution, and anisotropy distribution. The micromagnetic simulation results showed that the effect of anisotropy distribution on transition noise is more significant than magnetization saturation distribution, and it is crucial to reduce this effect to achieve a high signal-to-noise ratio. Additionally, a new method to further estimate the partial erasure threshold was proposed to approximate the partial erasure effects, and the relation between the microtrack jitter and total track jitter was investigated.     

Magneto resistance due to domain wall scattering and magneto size effect of thin Ni and Co films at low temperatures

Nickel and cobalt films illustrate alternative Bloch lines with cap switches. The strip magnetic domains become zigzag and bubbling cells for Ni and Co films, respectively, under an external field of 1.5 T. The magnetoresistances (MR) for currents parallel (CIW) to the domain walls is 15% less than those of the perpendicular (CPW) case. We also studied the magneto size effect by applying the magnetic field normal to the surface, from which the Sondheimer oscillation appears attributing to periodic striking of the surface for electrons traveling in circular motion on a plane canting to the surface. The experiments can be expressed by the magneto size effect inherited with very small specularity parameters.     

Raman spectroscopy of acoustic phonons in periodic and Fibonacci superlattices

Results of Raman scattering experiments on (a) periodic superlattices made up of GaAs/In_xGa_1−xAs layers with high indium concentrations, (b) GaAs/Ga_1−xAl_xAs Fibonacci superlattices, are presented. We discuss the observed peak positions and intensities using the continuum theory of acoustic wave propagation in layered media and the photo-elastic coupling model.     

On the hydrogen etching mechanism in plasma nitriding of metals

Iron alloys and aluminum were nitrogen implanted in a controlled oxygen atmosphere and the role of hydrogen on the surface etching mechanisms studied. The surface composition was analyzed by in situ photoemission electron spectroscopy (XPS). In iron alloys, hydrogen strongly etches oxygen, improving nitrogen retention on the surface. On the other hand, hydrogen removes nitrogen from aluminum surfaces, with a deleterious effect on the nitriding effectiveness. The oxygen removal in iron alloys is associated with the catalytic effect of electrons in d-orbitals and the nitrogen removal in aluminum is associated with a steric effect.