Theoretical analysis of ARUPS of a Si(100) surface at room temperature

ARUPS spectra of a Si(100) surface with disorder perpendicular to the dimer row are studied by the tight-binding method for the ensemble of surface buckled dimers. We assume order along the row. Results of ARUPS experiment on the surface at room temperature agree qualitatively with calculated results for disordered structure in which the distance to the next buckled dimer along the row and the height of the buckled dimer change alternately along the row. Peaks of two branches observed in a recent experiment at room temperature appear distinctly in calculated results as long as the short range order among the rows is not weak. The intensity of the two branches is very small compared to the other for conventional structure of the surface.     

Effects of organic modifiers on the chiral recognition by different types of silica-immobilized bovine serum albumin

We prepared three columns containing bovine serum albumin immobilized on silica by different means and the effects of organic modifiers in the eluent on chiral separation were studied using N-substituted amino acids. Adsorption on silica, covalent immobilization to diol-silica with carbonyldiimidazole (CSP-II) and covalent immobilization to amino-silica with glutaraldehyde were studied. CSP-II had the highest stereoselectivity and was the most affected by organic modifiers in the eluent. The hydrophobicity of amino acid moiety affected the chiral recognition of N-benzoylamino acids and the aromaticity of the N-substituted group was important.     

Expulsion of the CHO radical from the molecular ion of homochromones

For some homochromones, it was confirmed by labelling C-9 with deuterium that the CHO radical expelled from the molecular ion contains either the methine hydrogen or one of the methylene hydrogens of the cyclopropane ring. The origin of the CO group in the expelled CHO radical was also inferred, and a plausible mechanistic interpretation is presented.     

Scattering and diffraction of a plane wave from a randomly rough strip

This paper deals with plane wave scattering and diffraction from a randomly rough strip using a combination of three tools: the perturbation method, the Wiener-Hopf technique and a group-theoretic consideration based on the shift-invariant property of the homogeneous random surface. The D^a-Fourier transformation associated with the shift invariance is defined instead of the conventional complex Fourier transformation. For a slightly rough case, Wiener-Hopf equations for the zero-, first- and second-order perturbed fields are derived. They are reduced to a common Wiener-Hopf equation, an exact solution of which is obtained formally by means of the Wiener-Hopf technique. Using the inverse D^a-Fourier transformation, the scattered wavefield is obtained as a stochastic field. When the strip width is large compared with the wavelength, a uniformly asymptotic representation of the scattered far field is obtained by the saddle point method. For a Gaussian roughness spectrum, several numerical results are calculated and illustrated in figures, based on which the characteristics of scattering and diffraction are discussed.     

A new synthetic method for α-ketosilanes employing methoxy(phenylthio)trialkylsilylmethane as an α-silylacyl anion equivalent

Development of a new synthetic method for α-ketosilanes can be achieved by a sequence of alkylation of methoxy(phenylthio)trialkylsilylmethane and oxidation with NaIO₄.     

Raman scattering from GaAs-InxGa1−xAs strained-layer superllatices

Measurements of Raman scattering were performed on GaAs-In_xGa_1?xAs strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ～ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-Al_xGa_1?xAs superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk In_xGa_1?xAs alloys as the ratio of the one-layer thickness of In_xGa_1?xAs to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.     

Novel oxy-perfluoroalkylation

(Perfluoroalkyl)phenyliodonium sulfonates underwent novel oxy-perfluoroalkylation with alkenes under oxygen atmosphere in the presence of a base.