Electrochemical synthesis of aldehydes and acetals from α-phenylthiocarboxylic acid

α-Phenylthiocarboxylic acids were converted to the corresponding aldehydes or acetals with oxidative decarboxylation and desulfurization by electrolysis.     

Microscopic hydration of the sodium chloride ion pair

Hydration of ion pairs is an essential process in various physicochemical phenomena occurring in solutions. Isolated clusters of an ion pair solvated with finite number of waters have been considered as a model system for the critical evaluation of microscopic interactions involved in the process, and theoretical studies have contributed exclusively to the subject up to now. Here we report the first experimental characterization of structure and internal dynamics of hydrated ion pairs, NaCl-(H2O)n (n = 1-3). The measurements of their rotational spectra have proven that the clusters have cyclic forms, in which Na+ and Cl- ions are strongly interacted with the O and H atoms of the solvent molecules, respectively. The Na-Cl distance shows a pronounced increase with the successive addition of water molecules. The separation for n = 3 approaches the value predicted for the contact ion-pair state in aqueous solution by recent molecular dynamics simulations.     

Evaluation of a simple and novel fluorescent anion sensor, 4-quinolone, and modification of the emission color by substitutions based on molecular orbital calculations

4-Quinolone (4-QO) was evaluated as a simple and novel fluorescent anion sensor, and the modification of its emission color was carried out. The series of 4-QO derivatives having molecular orbitals with different energy levels was designed by substitutions at the 6 and 7 positions based on the molecular orbital calculations. All derivatives showed drastic fluorescence enhancements in the presence of F⁻ via the intramolecular charge transfer mechanism, and the successful modification of the emission color was achieved. The anion-induced emission colors of these derivatives as well as their binding affinities for F⁻ could be predicted by ab initio quantum chemical calculations, indicating that the present calculations are useful in designing new anion sensors.     

Structural transformation among the aggregate forms of bacteriochlorophyll c as determined by electronic-absorption and NMR spectroscopies: dependence on the stereoisomeric configuration and on the bulkiness of the 8-C side chain

Transformation among the aggregate forms of bacteriochlorophyll (BChl) c characterized by the wavelength of the Qy absorption, i.e. the dimer (B675), B705, B720 and B745, was traced by electronic-absorption spectroscopy for each of the isomers including R[E,E], R[P,E], R[I,E], S[P,E] and S[I,E] suspended in the mixtures of methylene chloride and n-hexane. A combination of NMR spectroscopy determining the structural motifs and calculation of the shift of the Qy absorption reflecting the long-range transition dipole-transition dipole interactions among the macrocycles in the entire aggregate structures proposed the following models: B705d (B705d'), a linear array of straight (inclined) columns consisting of a pair of the piggyback dimers; B720d and B745d, an assembly of two and five shifted-inclined columns consisting of more than six piggyback dimers; and B720m and B745m, an assembly of one and two parallel stepwise stacking of approximately 30 monomers. Calculations of the steric energies rationalized two different pathways of transformations: the dimer-->B705d (B705d')-->B720d-->B745d for the R isomers; and the monomer-->(B720m)-->B745m for the S isomers. Addition of S[I,E] seems to trigger the B745d-->B745m transformation of the R isomers.     

SELECTIVE NEURITE OUTGROWTH ON SILVER NEGATIVE ION (Ag~- )-IMPLANTED POLYSTYRENE SURFACES

INTRODUCTIONA negative ion-implantation technique[1,2] developed by us for use in semiconductors, integrated circuits (IC),and large scale-integrations (LSI) has been studied in its application on biotechnology. The implantation of highion energy beams causes the impairment of insulators such as common synthetic polymers. Our negative ion-implantation, however, is considered to result in less charge-up problems compared with positive ion-implantation. That is, negative ionic species can…     

Synthesis and crystal structure of two new cerium rhodium oxides: Ce2/3−xRh2O4 (x∼0.12) with Ce mixed valency and CeRh2O5

The new compounds Ce_2/3−xRh₂O₄ (x∼0.11-0.14) and CeRh₂O₅ have been prepared. Their structures were determined from single crystal X-ray diffraction data. Electrical and magnetic properties were also evaluated. Based on the structural analysis and physical properties, oxidation states for CeRh₂O₅ can be assigned as Ce⁴⁺Rh³⁺₂O₅. A small variation in x was detected for Ce_2/3−xRh₂O₄ indicating a formula ranging from Ce^3.64+_0.55Rh³⁺₂O₄ to Ce^3.81+_0.525Rh³⁺₂O₄.     

Synthesis and spectroscopic study of silacyclyne-substituted phenyleneethynylenes

A series of 1,1-dimethyl-4,5:8,9-dibenzo-1-silacycloundeca-4,8-diene-2,6,10-triyne (DST)-substituted phenyleneethynylenes were successfully synthesized by reaction of Me₂SiCl₂ with dimagnesium dianions which had been prepared from 2,2′-diethynyl(diphenylethyne) derivatives by treatment with 2 equiv of MeMgBr. All the products were white-to-pale yellow powder stable enough to handle in the air, and their photoluminescence spectra were recorded both in solution and in solid state.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.