钻石型等级晶格上Gauss模型的临界性质

在Gauss模型中 ,假设Gauss分布常数依赖于晶格格点的配位数 ,并且满足关系bqi/bqj=qi/ qj( qi是格点i的配位数 ,bqi是格点i上的Gauss分布常数 ) .利用重整化群变换和自旋重标相结合的方法 ,研究了一族钻石型等级晶格上Gauss模型的临界行为 .结果发现 :这些晶格的铁磁相变性质属于同一普适类 ,其临界点和临界指数分别为K =b_qi/ q_i 和ν=1 / 2 .     

Off-shell effects in quasielastic electron nucleus scattering

Using the Ward-Takahashi identity, on-shell condition, bound Dirac equation and off-shell expansion, a reduced version of half off-shell virtual photon nucleon vertex has been suggested. The vertex are decomposed into several different order terms: the on-shell terms, first and second off-shell terms. The off-shell behaviour of the form factors is discussed in the one meson loop model. Using the reduced vertex and parametrized off-shell form factors the quasielastic response functions are calculated for several nuclei at ¦q¦–k_f and for⁵⁶Fe at large ¦q¦ up to 1.14 GeV/c and at ?q²=0.9 (GeV/c)². The Coulomb sums are evaluated and a comparison of the theoretical prediction with data is given. The off-shell electron nucleon cross section is calculated and compared with the “cc1” off-shell extrapolation.     

中国六种管巢蛛记述（蜘蛛目：管巢蛛科）

本文记述我国管巢蛛6种,即白马管巢蛛Clubiona baimaensis sp. nov.、朝鲜管巢蛛C. corena Paik 金氏管巢蛛C. kimyongkii Paik、琴形管巢蛛C. lyriformis sp. nov.、臼齿管巢蛛C. moralis sp. nov.和江原管巢蛛C. wolchongsensis Paik。其中3种为新种,3种为我国新纪录。文中并提出,乌苏里管巢蛛C. ussurica Michailov(♀)可能与金氏管巢蛛(♂)为同种,因而乌苏里管巢蛛的拉丁字名应为后一种的同物异名。     

基于线性耦合下混沌系统的同步条件

将混沌同步问题用精确的数学语言给予描述，通过数学分析将其转化为微分方程组的稳定性问题.以Lorenz系统族的Chen氏系统作为典型系统，在线性耦合下分析系统参数，得到了系统达到同步时的充分条件，且在理论上加以证明.结合该条件，提出了一种确定耦合系数的方法.最后用仿真实验验证了该方法的正确性，并验证了在不同耦合方式和参考系统的情况下定理的有效性. 关键词： 混沌同步 耦合 稳定性     

On the Exceptional Zeros of Rankin–Selberg L-Functions

The main objects of study in this article are two classes of Rankin–Selberg L-functions, namely L(s,f×g) and L(s, sym²(g)× sym²(g)), where f,g are newforms, holomorphic or of Maass type, on the upper half plane, and sym²(g) denotes the symmetric square lift of g to GL(3). We prove that in general, i.e., when these L-functions are not divisible by L-functions of quadratic characters (such divisibility happening rarely), they do not admit any LandauSiegel zeros. Such zeros, which are real and close to s=1, are highly mysterious and are not expected to occur. There are corollaries of our result, one of them being a strong lower bound for special value at s=1, which is of interest both geometrically and analytically. One also gets this way a good bound onthe norm of sym²(g).     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

Synthesis and characterization of novel perfluorinated polyimides with 3D‐controlled structures for photonic applications

We have designed and synthesized novel perfluorinated polyimides with 3D controlled structure. At first, we successfully developed the new synthetic routes to diamines with pendant bulky perfluorinated aromatic units in a multi‐step synthetic procedure. Novel perfluorinated polyimides were prepared in a two‐step reaction in N‐methyl‐2‐pyrrolidinone (NMP) solution: The first step was for the synthesis of polyamic acids (PAAs) and the second reaction was for the imidization of PAA. The polymer yield was over 89% and the inherent viscosity of PAAs was in the range of 0.24–0.36 dL/g. The thin films were prepared by spin‐coating the PAA solution in NMP onto various substrates such as a Si wafer or a KBr pellet, dried at 80 °C and further cured at 230 °C. The resultant polyimides are thermally stable over 400 °C. The refractive index and birefringence of the resultant polyimides are 1.5858–1.6452 and 0.01–0.005, respectively. The refractive index of polyimide decreases with increasing the fluorine content. The copolymerization and the ether linkages into the backbone reduce the birefringence of polyimides. Surprisingly, the pendant ether linkage is not a crucial factor in reducing the polyimide birefringence. Their birefringence is comparatively very low, compared with that of previous polyimides. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 1326–1342, 2006     

Synthesis and luminescence characteristics of conjugated dendrimers with 2,4,6‐triaryl‐1,3,5‐triazine periphery

We have synthesized conjugated dendrimer with triazine peripheries, and their luminescence properties were investigated. The dendrimers consist of dendritic triazine wedges for electron transport, distyrylbenzene core as an emitting moiety, and t‐butyl peripheral groups for good processing properties. The dendrimers have LUMO values of about ?2.7 eV possibly because of the triazine moiety with high electron affinity. Photoluminescence study indicates that energy transfer occurs from the triazine wedges to the stilbene bridge, and finally to the core chromophore units due to a cascade decrease of bandgap from the peripheral wedge to core moiety. Therefore, the emission wavelength was determined by the structure of the core unit. The energy transfer efficiency of distyrylbenzene‐cored dendrimers was about 75 and 55% for Trz‐1GD‐DSB and Trz‐2GD‐DSB, respectively. A preliminary electroluminescence property also was investigated. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 254–263, 2006