用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

On the Exceptional Zeros of Rankin–Selberg L-Functions

The main objects of study in this article are two classes of Rankin–Selberg L-functions, namely L(s,f×g) and L(s, sym²(g)× sym²(g)), where f,g are newforms, holomorphic or of Maass type, on the upper half plane, and sym²(g) denotes the symmetric square lift of g to GL(3). We prove that in general, i.e., when these L-functions are not divisible by L-functions of quadratic characters (such divisibility happening rarely), they do not admit any LandauSiegel zeros. Such zeros, which are real and close to s=1, are highly mysterious and are not expected to occur. There are corollaries of our result, one of them being a strong lower bound for special value at s=1, which is of interest both geometrically and analytically. One also gets this way a good bound onthe norm of sym²(g).     

测量光折变非线性参量动态行为的一种新方法

在z扫描方法的基础上，提出了一种测量光折变非线性参量动态行为的新方法——时间扫描方法.理论和实验研究结果表明，这种新方法是精确、可行的. 关键词： 时间扫描方法 z扫描方法 非线性折射率 非线性吸收     

On the Strong Law of Large Numbers and the Law of the Logarithm for Weighted Sums of Independent Random Variables with Multidimensional Indices

Let (X, X ; ^d} be a field of independent identically distributed real random variables, 0 < p < 2, and {a _, ; ( , ) ^d × ^d, ≤ } a triangular array of real numbers, where ^d is the d-dimensional lattice. Under the minimal condition that sup _, |a _, | < ∞, we show that | |^{− 1/p} ∑ _≤ a _, X → 0 a.s. as | | → ∞ if and only if E(|X|^p(L|X|)^{d − 1}) < ∞ provided d ≥ 2. In the above, if 1 ≤ p < 2, the random variables are needed to be centered at the mean. By establishing a certain law of the logarithm, we show that the Law of the Iterated Logarithm fails for the weighted sums ∑ _≤ a _, X under the conditions that EX = 0, EX² < ∞, and E(X²(L|X|)^{d − 1}/L₂|X|) < ∞ for almost all bounded families {a _, ; ( , ) ^d × ^d, ≤ of numbers.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

具有突变结构开放腔的矩阵分析

利用模式展开与场匹配原理，建立了突变波导的散射矩阵(S参数矩阵)，在此基础上分析研究了具有突变结构的波导开放式谐振腔，并由矩阵级联建立了开放腔总的S参数矩阵.通过Matlab编制计算程序对具有多级突变结构的开放式输出腔进行了数值计算和分析，并通过与实验数据和软件模拟的结果比较对该方法得到的数据结果进行了验证. 关键词： 回旋管 开放式谐振腔 突变结构 S参数矩阵     

ASYMPTOTIC APPROXIMATION METHOD AND ITS CONVERGENCE ON SEMI-INFINITE PROGRAMMING

The aim of this article is to discuss an asymptotic approximation model and its convergence for the minimax semi-infinite programming problem. An asymptotic surrogate constraints method for the minimax semi-infinite programming problem is presented by making use of two general discrete approximation methods. Simultaneously, the consistence and the epi-convergence of the asymptotic approximation problem are discussed.     

二元合金微观偏析的相场法数值模拟

使用耦合溶质场的相场模拟研究了Ni-Cu二元合金枝晶生长过程中固相溶质扩散系数D_s 对枝晶形貌和微观偏析等的影响.计算结果表明，随着D_s的减少，固液界 面前沿溶质扩散层越薄，枝晶生长越有利，枝晶尖端生长的速度越大，侧向分支越发达；D< sub>s越小，固相中溶质成分的波动越强烈，随着D_s的增大，固相中溶质 成分的波动相应减小；溶质微观偏析程度随D_s的增大而减小. 关键词： 相场方法 微观偏析 固相扩散系数 数值模拟     

Phenylene vinylene‐based electroluminescent polymers with electron transport block in the main chain

We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron‐deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV‐based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole‐ and electron injections, such that the device efficiency is significantly improved. Light‐emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium–Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m² at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3469–3478, 2006