Optimization of the surface texture for silicon carbide sliding in water

Surface texturing has been recognized as an effective means to improve the tribological performances of sliding surfaces. Usually, generation additional hydrodynamic pressure to increase the load carrying capacity is regarded as the most significant effect of surface texture. In the case of silicon carbide sliding against identical material in water, the experimental results indicate that surface texture is also helpful to improve the running-in progress to smooth the contact surfaces, showing another reason to result in low friction. Based on the consideration of enhancing the generation of hydrodynamic pressure and improving running-in progress, a surface texture pattern, which was combined with large (circle, 350 μm in diameter) and small (rectangular, 40 μm in length) dimples, was designed to maximize the texture effect on the load carrying capacity of SiC surfaces sliding in water. The friction coefficient of such textured surface was evaluated and compared with that of untextured and those only with large or small dimples only. The friction reduction mechanisms of the patterns with different dimples in size are discussed.     

一类多维指数分布的参数估计

考虑生存函数为(F)(x1,x2,…,xn)=P{X1＞x1,…,Xn＞xn}=exp{-[n∑i=1(xi/θi)1/δ]δ}(0＜xi＜∞,0＜δ≤ 1,0＜θi＜∞,i=(1,n))的一类多维指数分布,给出了它的密度函数的表示式,并讨论了它的性质.提出了相关参数δ的估计(^δ),证明了(^δ)有相合性和渐近正态性,得到了(^δ)的渐近方差σ2δ.最后还给出了若干随机模拟的结果.     

Study of asymmetric charge writing on Pb(Zr,Ti)O3 thin films by Kelvin probe force microscopy

Polycrystalline Pb(Zr_0.55Ti_0.45)O₃ thin film was deposited on Pt/Ti/SiO₂/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.     

k-树的补图的最小填充和树宽

一个图的最小填充问题是寻求边数最少的弦母图,一个图的树宽问题是寻求团数最小的弦母图,这两个问题分别在稀疏矩阵计算及图的算法设计中有非常重要的作用．一个k-树G的补图G称为k-补树．本文给出了k-补树G的最小填充数f(G) 及树宽TW(G)．     

木质素在塑料中的应用

总结了国内外近10年来木质素在塑料中的应用进展，重点对木质素在PVC、PP、PE、PF、PU等5个方面的研究成果进行了系统阐述，并对该技术的发展方向进行了分析预测。     

A rational approximation and its applications to nonlinear partial differential equations on the whole line

An orthogonal system of rational functions is discussed. Some inverse inequalities, imbedding inequalities and approximation results are obtained. Two model problems are considered. The stabilities and convergences of proposed rational spectral schemes and rational pseudospectral schemes are proved. The techniques used in this paper are also applicable to other problems on the whole line. Numerical results show the efficiency of this approach.     

烟气中Hg的氧化机理的研究

本文对Ｈｇ与Ｃｌ２在烟气中的氧化反应进行了热力平衡计算和动力学计算。平衡计算的结果表明有ＣＩ元索存在时Ｈｇ的氧化率为１００％，而在相同的条件下动力学计算纺果为Ｈｇ的氧化率在２０％～８０％之间变化，与实验结果吻合。实际的氧化反应是一种超平衡状态，不能达到理想的平衡状态。因此应采用动力学与热力平衡分析相结合的方法研究Ｈｇ在烟气中的反应机理。同时，计算结果显示Ｃｌ含量对Ｈｇ的氧化率的影响很大．     

Hilbert重级数定理的一个改进

The object of this note is to prove the followingTheorem Let{a_n}and{b_n}be sequences of real numbers such that0<∑∑a_n~2<+∞and0<∑b_n~2<+∞.Then we have the inequalitysum from m=1 to∞sum from n=1 to∞a_mb_n/m+n<{sum from n=1 to∞(π-θ/n~(1/2)a_n~2}~1/2{sum from n=1 to∞(π-θ/n~(1/2)b_n~2}~1/2 (1)whereθ=3/2~(1/2)-1=1.121320343.     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)