大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

An Efficient Scheme for Entanglement Concentration of Arbitrary Four-Photon States

The maximally entanglement will become less-entangled state because of the effects of decoherence. However, maximally entangled states are usually important for most of the quantum information processing protocols. So we propose a practical entanglement concentration protocol of an arbitrary four-photon less-entangled state assisted with single photons, which greatly reduces the difficulty of the experimental realization. In our scheme, we only employ three steps, a four-photon cluster state can be acquired with a certain probability by three affiliated photons. The protocol adopts the linear optical elements and weak cross-Kerr media, which make the scheme more simple and feasible in the experiment.     

Ultracold two-component fermionic gases with a magnetic field gradient near a feshbach resonance

We study theoretically the ultracold two-component fermionic gases when a gradient magnetic field is used to tune the scattering length between atoms. For 6Li at the narrow resonance B0=543.25 G, it is shown that the gases would be in a coexistence of the regimes of BCS, Bose-Einstein condensation (BEC), and unitarity limit with the present experimental technique. In the case of thermal and chemical equilibrium, we investigate the density distribution of the gases and show that a double peak of the density distribution can give us a clear evidence for the coexistence of BCS, BEC, and unitarity limit.     

横向外延过生长磷化铟材料的生长速率模型

分别考虑气相扩散和掩膜表面扩散过程，建立了金属有机化学气相沉积条件下横向外延过生长的速率模型. 在砷化镓衬底上外延磷化铟条件下，模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系. 通过讨论掩膜/窗口宽度的影响，说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素. 以上结论与实验结果一致. 关键词： 横向外延 生长模型 扩散 生长速率     

The integrable hierarchy constructed from a pair of KdV-type hierarchies and its associatedW algebra

For any two arbitrary positive integers n and m, using them ^th KdV hierarchy and the (n+m)^th KdV hierarchy as building blocks, we are able to construct another integrable hierarchy (referred to as the (n, m)^th KdV hierarchy). TheW-algebra associated to the second Hamiltonian structure of the (n, m)^th KdV hierarchy (calledW(n, m) algebra) is isomorphic via a Miura map to the direct sum of aW _m -algebra, aW _n+m -algebra and an additionalU(1) current algebra. In turn, from the latter, we can always construct a representation of aW -algebra.     

碱金属原子量子亏损的微扰WKB计算

提出一个新的点电荷模型，用以模拟碱金属原子中原子实的电场性质，并用微扰ＷＫＢ法给出了量子亏损Δ的计算式。此式可反映量子亏损的实验规律。以锂、钠为例，对理论值和实验值的变化趋势进行了比较和讨论。     

降低表面等离子激元寄生吸收损失的途径研究

从纳米Ag颗粒表面等离子激元光学及表面高能电场特性两方面入手,较为系统地研究了周围介质的导电特性对表面等离子激元的影响.通过对复合薄膜紫外-可见-近红外光谱及表面增强拉曼散射光谱的分析,指出绝缘性的Al₂O₃介质薄膜能够起到良好的表面电场定域效果,且不会引入附加的光吸收损失;而导电性的ITO薄膜则会引入表面价电子的溢出损失,加速了表面电场的衰逝,同时引起长波方向上显著的光吸收损失.研究还表明致密的Al₂O₃介质薄膜能够起到良好的屏蔽作用,且纳米Ag颗粒表面等离子激元特性仅受最近邻材料特性的影响.研究结果为在硅基薄膜太阳电池中实现对纳米Ag颗粒的阻挡、寄生光吸收损失的降低以及表面高能电场的利用,提供了一条有效的解决途径.     

Influence of the antireflection,window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules

In order to well study the influence of the thickness and doping concentration on optical properties of transmission-mode GaAs photocathode, three exponential-doping and one uniform-doping photocathode modules were prepared by molecular beam epitaxy with a structure of glass/Si₃N₄/Ga_1 ? xAl_xAs/GaAs. By use of the spectrophotometer, the optical properties were separately measured including the reflectivity and transmissivity curves. Based on thin film optical principles, the optical properties and their integral values are calculated by matrix formula for the four-layer photocathode module. The result shows that the antireflection and window layers affect the peak and valley of the optical property curves and the active layer influences the absorptivity values of the transmission-mode cathode modules. The photocathode module has high absorptivity within the response waveband when the optimal module has the Si₃N₄ antireflection layer of 0.1 μm, the Ga_1 ? xAl_xAs window layer of more than 0.4 μm, and the GaAs active layer of 1.5 μm–2 μm and low average doping concentration.     

结合现代信息技术的大学物理设计性实验课程的研究与探索

文章以一个设计性实验课程设计为例,积极地融合现代信息技术,讨论如何结合现代信息技术的大学物理设计性及研究性实验课程,培养学生创新意识。     

Design of a reentrant double staggered ladder circuit for V-band coupled-cavity traveling-wave tube

The reentrant double staggered ladder slow-wave structure is employed in a high-power V-band coupled-cavity traveling-wave tube. This structure has a wide bandwidth, a moderate interaction impedance, and excellent thermal dissipation properties, besides the easy fabrication. A well-matched waveguide coupler is proposed for the structure. Combining the design of attenuators, a full-scale three-dimensional circuit model for the V-band coupled-cavity traveling-wave tube is constructed. The electromagnetic characteristics and the beam--wave interaction of this structure are investigated. The beam current is set to be 100 mA, and the cathode voltage is tuned from 16.8 kV to 15.8 kV. The calculation results show that this tube can produce a saturated average output power over 100 W with an instantaneous bandwidth greater than 1.25 GHz in the frequency ranging from 58 GHz to 62 GHz. The corresponding gain and electronic efficiency can reach over 32 dB and 6.5%, respectively.