A high‐resolution scheme for low Mach number flows

A method for computing low Mach number flows using high‐resolution interpolation and difference formulas, within the framework of the Marker and Cell (MAC) scheme, is presented. This increases the range of wavenumbers that are properly resolved on a given grid so that a sufficiently accurate solution can be obtained without extensive grid refinement. Results using this scheme are presented for three problems. The first is the two‐dimensional Taylor–Green flow which has a closed form solution. The second is the evolution of perturbations to constant‐density, plane channel flow for which linear stability solutions are known. The third is the oscillatory instability of a variable density plane jet. In this case, unless the sharp density gradients are resolved, the calculations would breakdown. Under‐resolved calculations gave solutions containing vortices which grew in place rather than being convected out. With the present scheme, regular oscillations of this instability were obtained and vortices were convected out regularly. Stable computations were possible over a wider range of sensitive parameters such as density ratio and co‐flow velocity ratio. Copyright © 2004 John Wiley Sons, Ltd.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Threshold character of the magnetoplastic effect in twinning of bismuth crystals

It is found that, when a bismuth crystal is subjected simultaneously to concentrated loading and a dc magnetic field, the magnetoplastic effect manifests itself as an abrupt decrease in the average length of wedge twins on the (111) cleavage plane (and, hence, as a decrease in the total twinned volume of the crystal) as a threshold value of the magnetic field is reached. However, the magnetic field stimulates glide deformation, which is indicated by an increase in the size of dislocation rosettes. The microhardness of a crystal varies smoothly and tends to increase with increasing magnetic field. The last phenomenon is accounted for by hardening of the crystal under the indenter in the presence of a magnetic field, because several slip systems become operative.     

Exact value of conjugate ion current in an electrolyte in the Gurevich-Kharkats diffusion-migration model

The exact solution of the problem of ion transport current in an electrolyte in the presence of a conjugate flow of solvent is obtained in the framework of the one-dimensional Gurevich-Kharkats diffusion-migration model; the conditions for the existence of the solution are analyzed.     

Stimulated raman scattering in fiber-optic communication lines

Stimulated Raman scattering (SRS) in a long-distance fiber-optic communication line with wavelength-division multiplexing (WDM) is studied theoretically at a high power of the signal transmitted. A new criterion for determining the SRS threshold is used to calculate the critical input power versus the number of optical channels and frequency separation between them. The theoretical model is verified experimentally. SRS interaction between two channels in a communication line with an SRS amplifier for which the optical waveguide of the line serves as a nonlinear medium is measured.