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de Santana Felipe Silva Gracioso Louise Hase Karolski Bruno dos Passos Galluzzi Baltazar Marcela Mendes Maria Anita do Nascimento Claudio Augusto Oller Perpetuo Elen Aquino 《Applied biochemistry and biotechnology》2019,189(1):103-115
Applied Biochemistry and Biotechnology - The human exposure to bisphenol A (BPA) occurs frequently. Once, this compound was one of the highest volume chemicals produced worldwide and used as a... 相似文献
23.
L. Resse L.G.S. Oliveira C.I.L. de Araujo A.R. Pereira R.L. Silva 《Physics letters. A》2019,383(14):1655-1659
In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius nm and different distance d between the disks centers (from nm to nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices. 相似文献
24.
Brandão Pedro Francisco Ramos Rui Miguel Rodrigues José António 《Analytical and bioanalytical chemistry》2018,410(26):6873-6880
Analytical and Bioanalytical Chemistry - Formaldehyde is often applied in the industrial production of different products, such as textiles, insulation materials, or cosmetics, due to its... 相似文献
25.
In this Note we give a necessary and sufficient condition for the spectral controllability from one simple node of a general network of strings that undergoes transversal vibrations in a sufficiently large time. This condition asserts that no eigenfunction vanishes identically on the string that contains the controlled node. The proof combines the Beurling–Malliavin's theorem and an asymptotic formula for the eigenvalues of the network. The optimal control time may be characterized as twice the sum of the lengths of all the strings of the network. To cite this article: R. Dáger, E. Zuazua, C. R. Acad. Sci. Paris, Ser. I 334 (2002) 545–550. 相似文献
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A Garcia-Quiroz David L AzevedoE.C da Silva 《Journal of Physics and Chemistry of Solids》2002,63(10):1863-1866
Properties of oxygenated carbon nitride films have attracted the attention of physics researchers due to their magnetic and physical properties, as well as for their usefulness in the industry. The free radicals were investigated using electron paramagnetic resonance applied in the study of spin concentration due to the different mechanism of preparation of carbon nitride films by RF-discharge with different kinds of plasma. Unpaired spin concentrations, in the order of 1020 per cm3, were measured and their time recombination dependency was important in those films. The films were grown by plasma enhanced chemical vapor deposition using mixtures of hydrocarbons, N2 and O2 in different proportions. 相似文献
29.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law. 相似文献
30.
E. C. Ferreira J. A. P. da Costa J. A. K. Freire G. A. Farias V. N. Freire 《Applied Surface Science》2002,190(1-4):191-194
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces. 相似文献