Phase shift analysis and extraction of structure functions for Coulomb distortion on (e, e'p) reactions at high electron energies

New results for the double beta decay of ⁷⁶ Ge are presented. They are extracted from data obtained with the HEIDELBERG-MOSCOW experiment, which operates five enriched ⁷⁶ Ge detectors in an extreme low-level environment in the Gran Sasso underground laboratory. The two-neutrino-accompanied double beta decay is evaluated for the first time for all five detectors with a statistical significance of 47.7 kg y resulting in a half-life of T _1/2 ^2ν = [1.55±0.01(stat)^+0.19 _-0.15(syst)]×10²¹ y. The lower limit on the half-life of the 0νββ decay obtained with pulse shape analysis is T _1/2 ^0ν > 1.9×10²⁵(3.1×10²⁵) y with 90% C.L. (68% C.L.) (with 35.5 kg y). This results in an upper limit of the effective Majorana-neutrino mass of 0.35 eV (0.27 eV) using the matrix elements of A. Staudt et al.'s work (Europhys. Lett. 13, 31 (1990)). This is the most stringent limit at present from double beta decay. No evidence for a majoron-emitting decay mode is observed. Received: 22 August 2001 / Accepted: 18 October 2001     

Time-of-flight studies of emission of μt from frozen hydrogen films

In recent TRIUMF experiments, a μ^- beam is stopped in a solid hydrogen film with a small fraction of T₂. The Ramsauer-Townsend (RT) mechanism allows μt to escape into vacuum with a few eV of energy. To study the emission process, an imaging system was used to determine the position of muon decays. Experimental histograms are in good agreement with a Monte Carlo simulation. This revised version was published online in August 2006 with corrections to the Cover Date.     

Characterization of unidirectional photopolymerization in poly(vinyl cinnamate) by surface optical second-harmonic generation

Surface optical second-harmonic generation measurements were used to determine the change in the surface density and the surface orientational order parameter of the trans-cinnamoyl side groups of unidirectionally photopolymerized poly(vinyl cinnamate) (PVCN) films. The observed surface features were compared to the bulk properties of the films, which were probed by their UV absorption spectra and birefringence measurements. We found that the surface and the bulk photoreaction kinetics of the trans cinnamoyl side groups of the PVCN are very similar. The two photoreaction processes (trans-cis photoisomerization and photo-induced cross linking) appear to affect the linear and nonlinear optical properties of the polymer differently. This may explain the discrepancy between the birefringence and the azimuthal anchoring force of the unidirectionally photopolymerized PVCN.     

Theoretical studies of the ion-hose instability in a plasma-focusedfree-electron laser

An `ion-focused' relativistic electron beam traversing a magnetic wiggler is subject to a transverse two-steam or `in-hose' instability, resulting from the coupling of transverse displacements of the beam centroid to the `slosh' motion of the (beam-focused) nonneutral ion plasma, and driven by the `V×B' deflection in the wiggler field. The equations of motion are resolved into an inhomogeneous `beam breakup' equation, and asymptotic growth is computed in the limit of linear focusing. The effect of nonlinearities is assessed numerically with a `distributed-mass' model. As examples, ion-hose growth is considered in a UV FEL and a microwave FEL two-beam accelerator     

LP MOVPE growth of AlGalnP/GalnP and its application to visible laser diodes

High-quality and uniform bulk layers of (Al _x Ga_1–x )_0.5In_0.5P (x=0–0.7) and AlGalnP/GainP quantum wells (QWs) are grown on 2°-off (100) GaAs substrates by low-pressure metal organic vapour phase epitaxy at a low growth rate of 0.3 nm s^-1. The amount of lattice mismatch and the variation of PL peak energy of (Al_0.5Ga_0.5)_0.5In_0.5P on the 50-mm substrate are less than 6×10^-4 and 2 meV, respectively. (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P SQWs show narrow PL spectra even from a 0.6 nm well measured at 20 K. The variation of PL peak energy from (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P MQWs is less than 10 meV. Also, as-cleaved AlGalnP/GalnP lasers fabricated by a three-step MOVPE show a pulsed threshold current of 82 mA at room temperature, output power of 12 mW, and the lasing wavelength at 668.2 nm.     

Crystalline-phase-dependent red emission behaviors of Gd2O3:Eu3+ thin-film phosphors

Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown at different deposition conditions showed different crystalline phases, surface morphologies and luminescent characteristics. Both cubic and monoclinic crystalline phases were observed for the Gd₂O₃:Eu³⁺ films, and the crystalline structure and the surface morphology of the films were highly dependent on the oxygen pressure and substrate temperature. The cubic system showed a higher luminescence than the monoclinic system. The luminescence characteristics were strongly influenced by not only the crystalline structure but also the surface morphology of the films. The photoluminescencebrightness data obtained from Gd₂O₃:Eu³⁺ films indicate that Al₂O₃(0001) is a promising substrate for growth of high-quality Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the Gd₂O₃:Eu³⁺ films showed a much better photoluminescence behavior than a Y₂O₃:Eu³⁺ films with the same thickness. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Multiple p-adic L-function

An analytic function interpolating the multiple generalized Bernoulli numbers attached to a primitive Dirichlet character X at negative integers in the complex plane is studied. The multiple p-adic L-function is constructed as the p-adic analog of the above function. Finally, the values of the partial derivative of this multiple p-adic L-function at s = 0 are given. Dedicated to the memory of Boris Moiseevich Levitan