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11.
Synchronization of Genesio chaotic system via backstepping approach   总被引:9,自引:0,他引:9  
Backstepping design is proposed for synchronization of Genesio chaotic system. Firstly, the control problem for the chaos synchronization of nominal Genesio systems without unknown parameters is considered. Next, an adaptive backstepping control law is derived to make the error signals between drive Genesio system and response Genesio system with an uncertain parameter asymptotically synchronized. Finally, the approach is extended to the synchronization problem for the system with three unknown parameters. The stability analysis in this article is proved by using a well-known Lyapunov stability theorem. Note that the approach provided here needs only a single controller to realize the synchronization. Two numerical simulations are presented to show the effectiveness of the proposed chaos synchronization scheme.  相似文献   
12.
In this paper, we analyze the manufacturing lead time in a production system with BMAP (Batch Markovian Arrival process) input and post-operation operated under the N-policy. We use the factorization principle to derive the waiting time distribution (hence the manufacturing lead time) and the mean performance measures. A numerical example is provided.  相似文献   
13.
Monodisperse polyaniline nanoparticles (PAPSSA) were synthesized from an oxidative dispersion polymerization using poly(sodium 4-styrenesulfonate) (PSSA) as both a polymeric stabilizer and a dopant agent due to its acidity. The nanoparticles were being stabilized with two different molecular weight of PSSA. Size effect of PAPSSA particles were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and dynamic light scattering (DLS). The d.c. electrical conductivity of composite films on the glass substrate was measured by a four-probe method. It was found that the electrical properties of the composite films are affected by the content of nano-sized polyaniline and different molecular weights of stabilizer in the poly(vinyl alcohol) (PVA) matrix.  相似文献   
14.
The concept of a novel electrochemical reduction process for the treatment of spent nuclear fuels in Li2O-LiCl molten salt was proposed and fresh tests using U3O8 powder were carried out to elucidate the reaction mechanism and verify the feasibility of the process. Electrolysis of Li2O and reduction of U3O8 powder took place simultaneously at the cathode part of the electrolysis cell via a catalytic EC mechanism and the conversion of U3O8 to U metal was more than 99%. This revised version was published online in June 2006 with corrections to the Cover Date.  相似文献   
15.
Formation of p-type ZnO film on InP substrate by phosphor doping   总被引:3,自引:0,他引:3  
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.  相似文献   
16.
Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO2 structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2. Indeed, Li[Ni0.50Mn0.50]O2 compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni0.17Li0.22Mn0.61]O2 and Li[Ni0.25Li0.17Mn0.58]O2 compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni2+ and about Ni3+, while the oxidation state of Mn ion sustains Mn4+ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2, in which Ni ion changes between Ni2+ and NI4+. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process.  相似文献   
17.
In this paper, we prove the Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation. This is applied to investigate homomorphisms between quasi-Banach algebras. The concept of Hyers-Ulam-Rassias stability originated from Th.M. Rassias' stability theorem that appeared in his paper [Th.M. Rassias, On the stability of the linear mapping in Banach spaces, Proc. Amer. Math. Soc. 72 (1978) 297-300].  相似文献   
18.
Summary We study Sobolev space functions with prescribed growth properties on large spheres. In particular, we prove a weighted Poincaré type inequality for such functions. An extension to weighted Sobolev spaces is sketched.
Sunto Si studiano funzioni che appartengono a certi spazi di Sobolev e che hanno crescita assegnata su sfere di grande raggio. Per tali funzioni si dimostra una disuguaglianza di tipo Poincaré con peso. Si indica inoltre anche una estensione di tale risultato a funzioni in spazi di Sobolev con peso.
  相似文献   
19.
20.
The emission characteristics of several Cu lines emitted from a Ne-Ar mixed gas glow discharge plasma were investigated. The addition of small amounts of Ar to a Ne plasma increases the sputtering rate of a Cu sample because Ar ions, which work as the impinging ions for cathode sputtering, are predominantly produced through Penning ionization collisions between Ne metastables and Ar atoms. Ar addition also elevates the number density of electrons in the plasma. These changes occurring in the Ne-Ar mixed gas plasma result in enhanced emission intensities of the Cu lines. The Cu II 270.10-nm and the Cu II 224.70-nm lines yield different intensity dependence on the Ar partial pressure added. This phenomenon is because these Cu II lines are excited principally through different charge transfer processes: collisions with Ne ions for the Cu II 270.10-nm line and collisions with Ar ions for the Cu II 224.70-nm line. The shape of sputtered craters in the Ne-Ar glow discharge plasma was measured. The depth resolution was improved when Ar was added to a Ne plasma because the crater bottoms were flatter with larger Ar partial pressures.  相似文献   
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