Kaon production in\bar pp interactions at c.m. energies from 200 to 900 GeV

A detailed analysis ofK _s ⁰ production in \(\bar pp\) |<2.5 the average transverse momentum is found to be 0.53±0.07 GeV/c at 200 GeV and 0.62±0.08 GeV/c at 900 GeV, which is an increase with respect to data at c.m. energies below 60 GeV. TheK _s ⁰ production cross sections in inelastic collisions are 29±4 mb at 200 GeV and 63±6 mb at 900 GeV, showing an increase compared to lower energy data. The central kaon density is found to increase as a logarithmic function of energy. At 900 GeV, where statistics are sufficient to allow one to draw conclusions, the average transverse momentum is higher in events with large charged multiplicity than in events with low multiplicity.     

Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.     

Enhanced gauge symmetry in 6D F‐theory models and tuned elliptic Calabi‐Yau threefolds

We systematically analyze the local combinations of gauge groups and matter that can arise in 6D F‐theory models over a fixed base. We compare the low‐energy constraints of anomaly cancellation to explicit F‐theory constructions using Weierstrass and Tate forms, and identify some new local structures in the “swampland” of 6D supergravity and SCFT models that appear consistent from low‐energy considerations but do not have known F‐theory realizations. In particular, we classify and carry out a local analysis of all enhancements of the irreducible gauge and matter contributions from “non‐Higgsable clusters,” and on isolated curves and pairs of intersecting rational curves of arbitrary self‐intersection. Such enhancements correspond physically to unHiggsings, and mathematically to tunings of the Weierstrass model of an elliptic CY threefold. We determine the shift in Hodge numbers of the elliptic threefold associated with each enhancement. We also consider local tunings on curves that have higher genus or intersect multiple other curves, codimension two tunings that give transitions in the F‐theory matter content, tunings of abelian factors in the gauge group, and generalizations of the “E₈” rule to include tunings and curves of self‐intersection zero. These tools can be combined into an algorithm that in principle enables a finite and systematic classification of all elliptic CY threefolds and corresponding 6D F‐theory SUGRA models over a given compact base (modulo some technical caveats in various special circumstances), and are also relevant to the classification of 6D SCFT's. To illustrate the utility of these results, we identify some large example classes of known CY threefolds in the Kreuzer‐Skarke database as Weierstrass models over complex surface bases with specific simple tunings, and we survey the range of tunings possible over one specific base.     

Experimental investigation of high-quality synchronization of coupled oscillators

We describe two experiments in which we investigate the synchronization of coupled periodic oscillators. Each experimental system consists of two identical coupled electronic periodic oscillators that display bursts of desynchronization events similar to those observed previously in coupled chaotic systems. We measure the degree of synchronization as a function of coupling strength. In the first experiment, high-quality synchronization is achieved for all coupling strengths above a critical value. In the second experiment, no high-quality synchronization is observed. We compare our results to the predictions of the several proposed criteria for synchronization. We find that none of the criteria accurately predict the range of coupling strengths over which high-quality synchronization is observed. (c) 2000 American Institute of Physics.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)