Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions

The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

Proximity effect in superconductor/ferromagnet layered system: Influence of superconductivity on magnetic properties of Nb/Fe epitaxial bilayers

Magnetic and superconducting properties of Fe/Nb epitaxial bilayers have been studied. Single crystal Fe/Nb (110) bilayers with a Nb thicknessd _Nb in the range from 250 to 650 Å and with a Fe thicknessd _Fe in the range from 7 to 27 Å were prepared using molecular beam epitaxy techniques. Magnetization measurements showed the existence of a magnetically “dead” Fe-interface layer with a thicknessd _NM varying strongly with minor modifications of the growth conditions. For bilayers with a small magnetic layer thicknessd _M and a smalld _NM the FMR measurements revealed an anomalous decrease of the effective magnetization 4πM _eff of the ferromagnetic Fe layer below the superconducting transition temperatureT _c. The absolute change of 4πM _eff belowT _c depends strongly on the actual values ofd _M andd _NM: upon decreasing bothd _M andd _NM the effect increases considerably. As a possible mechanism for the anomalous temperature dependence of 4πM _eff belowT _c we discuss a spatial modulation of ferromagnetic order due to a modification of the RKKY inter-action in the superconducting state.     

AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

An ion beam technique has been developed which allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very flat angles in the order of 0.1°. The bevels are used for AES depth profiling of heterostructures by the line scan technique. Measured and calculated line scans from (Al,Ga)As/GaAs and SiGe/Si test structures are compared to estimate the contributions of the electron escape depth and the ion beam mixing to the depth resolution. Received: 21 August 1996 / Revised: 14 January 1997 / Accepted: 18 January 1997     

Endomorphism valued cohomology and gauge-neutral matter

For several physically interesting Calabi-Yau manifolds, we count and parametrize gauge-neutral matter particles occurring in corresponding superstring compactifications. To this end, we use the technique of exact and spectral sequences and then describe and discuss our results in the more familiar tensor notation.Supported by the Robert A. Welch Foundation and the NSF Grant: PHY 8605978. On leave of absence from the Ruder Bokovi Institute, Bijenika 54, YU-41000 Zagreb, Croatia, Yugoslavia