The Synthesis of Glycoglycerolipids

A convenient synthetic route was developed for the synthesis of the novel glycolipids: 1,2-di-O-acyl-3-O-(2‘-acylamide-2‘-denxy-ct-D-glucopyranosyl)-sn-glycerols. 10 new compounds of glycolipids with different acyl groups were obtained.     

Dynamical Convergence Trajectory in Networks

It is well known that topology and dynamics are two major aspects to determine the function of a network. We study one of the dynamic properties of a network： trajectory convergence, i.e. how a system converges to its steady state. Using numerical and analytical methods, we show that in a logical-like dynamical model, the occurrence of convergent trajectory in a network depends mainly on the type of the fixed point and the ratio between activation and inhibition links. We analytically proof that this property is induced by the competition between two types of state transition structures in phase space： tree-like transition structure and star-like transition structure. We show that the biological networks, such as the cell cycle network in budding yeast, prefers the tree-like transition structures and suggest that this type of convergence trajectories may be universal.     

体效应振荡器特性观测与使用实验教学研究

探讨了体效应振荡器特性观测与使用实验中，编写实验原理要应用能带结构解释负阻特性并通过对偶极畴生长和运动过程的描述说明振荡原理，提出了实验教学方案，从教学效果上分析了开设此实验的意义及合理性。     

凸度量空间中单值和集值映象的公共不动点定理

§ 1.　Introduction　　Anecessaryandsufficientconditionandasufficientconditiontoensurethataset valuedmappingandasingle valuedmappinginacompletemetricspaceandacompleteconvexmetricspacehavingacommonfixedpointarerespectivelygivenin [1 ] .Meanwhilethemainresultsin[2 ]— [5]areimprovedandextendedin [1 ] .Inthispaper ,theexistenceatcommonfixedpointsoftwoset valuedmappingandasing valuedmappingwerestudied ,andthecorrespond ingresultsin [1 ]— [5]wereextendedandimproved .Let(X ,d)beanon emptymetricspa…     

Writing Fiber Grating of Different Wavelength Using the Same Phase Mask

Chirped fiber grating was used in dispersion compensator. We tried to use the same phase mask to write fiber grating of different wavelength with two methods to reduce the price of the fiber grating.     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

集中荷载下叠合梁抗剪强度

本文对低叠合面钢筋破简支在合梁二阶段受力的斜截面抗剪性能进行了试验研究，并运用非线性有限元分析和试验实测数据，得出了一个适合于集中荷载下高低叠合面叠合梁的抗剪强度计算公式．     

复Finsler流形上的Koppelman-Leray-Norguet公式

利用不变积分核(Berndtsson核),复Finsler度量和联系于Chern-Finsler联络的非线性联络,研究复Finsler流形上具有逐块光滑C~((1))边界的有界域上(p,q)型微分形式的积分表示,得到了(p,q)型微分形式的Koppelman-Leray-Norguet公式和■-方程的解．作为应用,利用复Finsler度量和联系于Chern-Finsler联络的非线性联络,给出了Stein流形上具有逐块光滑C~((1))边界的有界域上(p,q)型微分形式的Koppelman- Leray-Norguet公式以及■-方程的解,并且得到了Stein流形上实非退化强拟凸多面体上(p,q)型微分形式的积分表示式和■-方程的解．     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

星载光学系统遮光罩消杂光结构优化设计方法

本文对星载光学系统遮光罩消杂光结构的优化设计做了初步探讨。提出了遮光罩和挡光环消杂光设计的基本原则。给出了一种二级遮光罩结构寸的优化设计方法和一种遮光罩内壁上挡光环位置优化设计方法,并对一级和二级遮光罩进行了初步的分析比较。