Mathematical modeling of crystallization analysis fractionation (Crystaf) of polyethylene

Four polyethylene samples (PE) with different molecular weight distributions (MWD) were analyzed by crystallization analysis fractionation (Crystaf) at several cooling rates to investigate the effect of MWD and cooling rate on their Crystaf profiles. Using these results, we developed a mathematical model for Crystaf that considers crystallization kinetic effects, which are ignored in all previous Crystaf models. The Crystaf model we proposed can fit the experimental Crystaf profiles of the 4 polyethylene resins very well. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2749–2759, 2006     

40 GHz Mode-Locked Semiconductor Lasers: Theory, Simulations and Experiment

We study both theoretically and experimentally typical operation regimes of 40 GHz monolithic mode-locked lasers. The underlying Traveling Wave Equation model reveals quantitative agreement for characteristics of the fundamental mode-locking as pulse width and repetition frequency tuning, as well as qualitative agreement with the experiments for other dynamic regimes. Especially the appearance of stable harmonic mode-locking at 80 GHz has been predicted theoretically and confirmed by measurements. Furthermore, we derive and apply a simplified Delay-Differential-Equation model which guides us to a qualitative analysis of bifurcations responsible for the appearance and the breakup of different mode-locking regimes. Higher harmonics of mode-locking are predicted by this model as well.     

Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions

The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

Proximity effect in superconductor/ferromagnet layered system: Influence of superconductivity on magnetic properties of Nb/Fe epitaxial bilayers

Magnetic and superconducting properties of Fe/Nb epitaxial bilayers have been studied. Single crystal Fe/Nb (110) bilayers with a Nb thicknessd _Nb in the range from 250 to 650 Å and with a Fe thicknessd _Fe in the range from 7 to 27 Å were prepared using molecular beam epitaxy techniques. Magnetization measurements showed the existence of a magnetically “dead” Fe-interface layer with a thicknessd _NM varying strongly with minor modifications of the growth conditions. For bilayers with a small magnetic layer thicknessd _M and a smalld _NM the FMR measurements revealed an anomalous decrease of the effective magnetization 4πM _eff of the ferromagnetic Fe layer below the superconducting transition temperatureT _c. The absolute change of 4πM _eff belowT _c depends strongly on the actual values ofd _M andd _NM: upon decreasing bothd _M andd _NM the effect increases considerably. As a possible mechanism for the anomalous temperature dependence of 4πM _eff belowT _c we discuss a spatial modulation of ferromagnetic order due to a modification of the RKKY inter-action in the superconducting state.     

AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

An ion beam technique has been developed which allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very flat angles in the order of 0.1°. The bevels are used for AES depth profiling of heterostructures by the line scan technique. Measured and calculated line scans from (Al,Ga)As/GaAs and SiGe/Si test structures are compared to estimate the contributions of the electron escape depth and the ion beam mixing to the depth resolution. Received: 21 August 1996 / Revised: 14 January 1997 / Accepted: 18 January 1997     

Endomorphism valued cohomology and gauge-neutral matter

For several physically interesting Calabi-Yau manifolds, we count and parametrize gauge-neutral matter particles occurring in corresponding superstring compactifications. To this end, we use the technique of exact and spectral sequences and then describe and discuss our results in the more familiar tensor notation.Supported by the Robert A. Welch Foundation and the NSF Grant: PHY 8605978. On leave of absence from the Ruder Bokovi Institute, Bijenika 54, YU-41000 Zagreb, Croatia, Yugoslavia     

On the phase structure of the compact abelian lattice Higgs model

This paper studies the vacuum overlap order parameter proposed by Fredenhagen and Marcu in the case of the compactU(1) gauge model with the Wilson action coupled to a Higgs field with fixed length ||=1. The existence of two distinct phases inD space-time dimensions (D4) is established.