菌紫质薄膜光致折射率变化的理论计算和实验测量

基因改性细菌视紫红质BR-D96N由于M态寿命的延长而具有显著的光致变色特性.根据Kramers-Kronig变换关系,样品吸收光谱的变化会引起样品折射率的变化.本文首先从实验上测量了BR-D96N薄膜样品在光激发前后的吸收光谱,然后根据Kramers-Kronig变换关系,理论计算了对应此光致变色光谱变化的光致折射率变化光谱.实验上为了直接测量样品的光致折射率变化,采用Michelson干涉方法测量BR-D96N薄膜在不同探测波长下的光致折射率变化量,并与理论计算曲线进行了比较.     

Beam-based calibrations of the BPM offset at C-ADS Injector Ⅱ

Beam-based BPM offset calibration was carried out for Injector II at the C-ADS demonstration facility at the Institute of Modern Physics(IMP), Chinese Academy of Science(CAS). By using the steering coils integrated in the quadrupoles, the beam orbit can be effectively adjusted and BPM positions recorded at the Medium Energy Beam Transport of the Injector II Linac. The studies were done with a 2 m A, 2.1 Me V proton beam in pulsed mode.During the studies, the "null comparison method" was applied for the calibration. This method is less sensitive to errors compared with the traditional transmission matrix method. In addition, the quadrupole magnet's center can also be calibrated with this method.     

Structures,Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.     

图像平场校正方法的扩展应用研究

对于图像阵列探测器而言,由于各像元响应的不一致使得所获图像中各像元灰度存在差异（响应的非均性现象）,而图像的平场校正可以非常有效地消除图像中各像元响应的不一致性.如果将图像背景或光路中影响成像的一些因素在一定程度上看作是图像探测器的响应,认为它是响应非均匀的组成部分,根据平场校正的原理对其进行处理,则可以获得较好的效果.     

热传导方程的一类无网格方法

构造求解热传导方程的一类无网格方法,只要选择好每个节点的适当的邻点集合,便可利用节点信息顺利进行计算.作为特殊情形,也可在各种结构或非结构网格上进行计算.在矩形或均匀平行四边形网格上进行计算时具有二阶精度,当在任意的不规则四边形或三角形网格上计算时仍然是守恒的和相容的,且至少具有一阶精度.作为数值试验,将该方法用于在不规则四边形网格上及四边形与三角形混合网格上求解二维非线性抛物型方程,并在不规则四边形网格上求解二维三温辐射热传导方程,均获得了较为理想的数值结果.     

NⅡ离子2p4f—2p3d辐射跃迁概率的理论研究

在全相对论理论框架下，利用多组态Dirac-Fock(MCDF)方法，系统计算了NⅡ离子2p4f—2p3d的辐射跃迁概率，得到的结果与已有实验值符合很好.具体计算中，详细分析了相对论效应、电子关联、弛豫效应、Breit相互作用和量子电动力学(QED)效应对能级精细结构及辐射跃迁概率的影响.结果表明：相对论效应、电子关联和弛豫效应对NⅡ 2p4f-2p3d辐射跃迁概率有很重要的影响,考虑了这些效应后计算值得到明显改善.     

基于SRLG不相关的共享保护算法的研究

通过对共享保护算法的深入分析,使用K条最短路和迭代思想的方法,提出了两种共享风险链路组不相关的共享保护算法,并在仿真平台上对两种算法的性能进行了仿真.KWFF算法借鉴了传统的K条最短路策略,并且在每一个波长平面上,都对新到业务进行了K条工作路由的计算,极大挖掘了网络中潜在的波长资源.而IFF算法由于引入了迭代的思想,避免了共享风险链路组问题中,所特别有“陷阱”问题的出现,并且利用两套权重计算公式,在计算工作路由和保护路由的时候,充分考虑了网络资源的实时变化情况.通过仿真数据可以看到,与以往算法相比,KWFF和IFF算法大大降低了网络阻塞率,并且提高了网络资源的使用效率.     

掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

An improved watermarking method based on double random phase encoding technique

An improved watermarking method, based on the double random phase encoding technique and the cascaded-phases iterative algorithm and random-phase-shift algorithm, is proposed. This method can significantly reduce the needs of watermarking information storage for different multimedia products, and provide a reasonable criterion of determining the authenticity of a product for the copyright owner. This method can also be applied to track the source of copies. The effectiveness of this method was verified through numerical simulations.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.