Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga_1−x Al _x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.

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Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga_1−x Al _x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.

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Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga_1−x Al _x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.

     

Thermoelectric properties of tin clathrates under hydrostatic pressure

We report the temperature dependence of electrical resistance (R) and thermopower (S) of clathrate Cs₈Sn₄₄ under high pressure up to 1.2 GPa. We observe a reversible gap widening, prominent relaxation effect of R, irreversible increase of |S| under high pressure. We also find that the power factor S²σ (σ: electrical conductivity) reaches a maximum at pressure of 0.3 GPa. Comparison of the experimental results with band structure calculations suggests that the intrinsic vacancy in the clathrate structure of Cs₈Sn₄₄ plays an important role in transport properties under high pressure. Measurements on Cs₈Zn₄Sn₄₂, a clathrate which has defects other than vacancies, are compared with Cs₈Sn₄₄. The results indicate that replacing Sn by Zn has similar effect as the intrinsic vacancy on S.     

泛连通图定理和Ore2条件

记Ore2=min{d(y) d(x)|x,y∈V(G),d(x,y)=2}，本得到：若n阶图G的Ore2≥n 1，则G是[5;n]泛连通图。此是比Faudree等人的定理进一步的结果。     

Use of a long-spacer-side-chain liquid crystalline polysiloxane containing a crown ether as a stationary phase for capillary gas chromatography

A new kind of side chain liquid crystalline polysiloxane containing a crown ether with a longer spacer (PSC-11) has been prepared and coated on a fused silica capillary column. The main chroma-tographic characteristics including efficiency, polarity, and selectivity have been examined. The phase exhibits the retention properties of both liquid crystal and crown ether stationary phases and possesses higher efficiency and better selectivity than PSC-3, which has a shorter spacer between the main polysiloxane chain and liquid crystalline side chain.     

受激喇曼散射在掺铒光纤放大器中的影响

本文在分析了均匀掺杂分布式光纤放大器（d－EDFA）的基础上，提出了沿传输方向掺杂浓度单调下降（单变），和降升结合（两变）的两种渐变型分布式光纤放大器，并用传输方程研究了透明传输和最佳掺杂浓度下，受激喇曼散射对均匀、单变和两变型三种d－EDFA的各种特性的影响．     

Riccati方法与微分方程的渐近积分

考虑二阶常微分方程x″ f(t)x=0,t≥a,(1)假设应用Riccati方法得到方程(1)的主解(principal solution)的一个渐近积分并研究其副解(nonprincipal solutions)的三种不同的渐近性质.主要结果如下:定理1 若(Ⅰ)成立,则方程(1)有解x_1满足及另一解x_2满足x_2(t)=t[1 o(1)]. 反之,若方程(1)有解x(t)→1,t→∞,则(Ⅰ)成立. 定理2 设(Ⅰ)成立.(i)若(Ⅱ)成立,则方程(1)有解x_2使x_2’(t)=1 [tF(t) G(t)][1 o(1)] o(1). (ii) 反之,若方程(1)有解x使x’→1,t→∞,则(Ⅱ)成立. 定理3 若(Ⅲ)和(Ⅳ)成立,则方程(1)有解x_1满足(2)及解x_2满足     

Variational inequalities for monotone operators in nonreflexive Banach spaces

The purpose of this paper is to study the existence problem of solutions and perturbation problem for some kind of variational inequalities with monotone operators in nonreflexive Banach spaces, and to obtain some results.