轻型汽车后桥半轴断裂件的组织及断口特征

采用光学显微镜和扫描电子显微镜等手段，对某轻型汽车40Cr后桥半轴断裂件的组织及断口特征进行了分析结果表明：半轴在调质处理时的淬火温度不够高，使其表层和心部组织中存在较多的铁素体相，造成了工件最终的硬度和疲劳强度不足，导致半轴在使用中发生扭转疲劳断裂．     

Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

Boundary value problems for first order impulsive delay differential equations with a parameter

In this paper, by means of the method of upper and lower solutions and monotone iterative technique, the existence of maximal and minimal solutions of the boundary value problems for first order impulsive delay differential equations is established.     

A hybrid active noise controller for finite ducts

A hybrid active noise controller (ANC) is proposed to solve some existing problems, which are related to the non-minimum phase (NMP) path models between uncollocated sensors and actuators in many ANC systems. For hybrid ANC schemes, the NMP path causes design difficulties to both feedforward and feedback control. These problems can be solved effectively by adding an extra actuator in the ANC system. A new design procedure is presented to take the greatest advantage of the extra actuator. Theoretical analysis and experimental results are presented to show the improved performance of the proposed ANC.     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

高功率固体激光放大系统相位自校正方法研究

就光学元件间低频相位误差叠加提出用相关系数作为叠加相位结果的估计参量，并通过模拟计算和验证实验证明了相关系数能有效地对低频相位叠加结果进行比较估计，在此基础上就高功率固体激光放大系统中放大片的选取和安装提出了自校正方法并实现了自校正过程。     

Detection of low caloric power of coal by pulse fast-thermal neutron analysis

This paper introduces the analysis method and principle of pulse fast-thermal neutron analysis (PFTNA). A system for the measurement of low caloric power of coal by PFTNA is also presented. The 14 MeV pulse neutron generator and BGO detector and 4096 MCA were applied in this system. A multiple linear regression method applied to the data solved the interferential problem of multiple elements. The error of low caloric power between chemical analysis and experiment was less than 0.4 MJ/kg. This revised version was published online in July 2006 with corrections to the Cover Date.     

用改进嵌入原子法计算Cu晶体的表面能

用改进嵌入原子法(MEAM)计算了Cu晶体12个晶面的表面能.结果表明，密排面(111)的表面能最小.其他晶面的表面能随其晶面与(111)晶面夹角的增加而增加，据此可以粗略地估计各晶面表面能的相对大小.给出的几何结构因子的确定方法及结果可以直接用于计算其他面心立方晶体的表面能及其他特性.在Cu,Ag等面心立方薄膜中出现(111)择优取向或织构的机理是表面能的最小化. 关键词： 改进嵌入原子法 铜 表面能 计算     

The Characterisitic of Proton-Exchanged LiNbO3 Waveguide Formed by Different Proton Source

Benzoic acid as a source of proton is widely used in the technology of manufacture of proton exchanged ( PE) waveguide .But the diffusing speed of proton is too fast to make the waveguide stable in the pure benzoic acid. The characteristic of waveguide is improved with mixture of benzoic acid and lithium benzoate .     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.