Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

LONG-TIME BEHAVIOR OF A CLASS OF REACTION DIFFUSION EQUATIONS WITH TIME DELAYS

The present paper devotes to the long-time behavior of a class of reaction diffusion equations with delays under Dirichlet boundary conditions. The stability and global attractability for the zero solution are provided, and the existence, stability and attractability for the positive stationary solution are also obtained.     

Integral Inequalities and Global Solutions of Semilinear Evolution Equations

A criterion for the nonexplosion of solutions to semilinear evolution equations on Banach spaces is proved. The result is obtained by applying a modification of the Bihari type inequality to the case of a weakly singular nonlinear integral inequality.     

Solitary waves and their bifurcations of KdV like equation with higher order nonlinearity

We investigate the KdV like equation with higher order nonlinearity ut + a(1 +bun)unux + uxxx = 0with n ≥ 1, a, b ∈ R and α≠ 0. The bifurcations and explicit expressions of solitary wave solutions for theequation are discussed by using the bifurcation method and qualitative theory of dynamical systems. Thebifurcation diagrams, existence and number of the solitary waves are given.     

利用振幅调制器进行光电负反馈抑制激光强度噪声

采用振幅调制器作为抑制激光强度噪声的元件，首先对光电负反馈回路进行了简要的理论分析，然后利用该光电负反馈进行抑制激光二极管抽运全固化单频环形Nd:YVO4红外激光器强度噪声的实验。结果表明，在0－1MHz的低频段，强度噪声大幅度降低，最大降低约15dB。     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

关于惠斯登电桥测电阻倍率与检流计灵敏度关系的研究

在相同的设备条件下，电桥临近平衡时灵敏度最高的最佳倍率是：组成倍率的两个电阻的数量级与待测电阻数量级相等，且比值为1的倍率。     

激光诱导荧光探测水体中溶解有机物浓度

用Nd∶YAG激光器的三倍频355 nm光作为激发光源,根据激光诱导荧光(LIF)方法激发并探测污染水体的荧光光谱.通过对荧光光谱的分析处理研究归一化荧光强度,即450 nm处水中溶解有机物(DOM)峰与405 nm处水的拉曼峰的比值,反演溶解有机物浓度.用商品腐殖酸和去离子水配置成已知浓度的溶液代替标准DOM溶液进行标定,得到回归方程.结果证明,DOM的归一化荧光强度与水体中DOM浓度有较好的线性关系,因此LIF方法是对大面积水域水质进行动态遥测的较理想方法.     

基于递推最小二乘的红外焦平面非均匀校正算法

根据递推最小二乘和图像配准原理,提出了基于递推最小二乘的红外焦平面非均匀校正算法(简称ILS算法),有效降低算法的时间和空间复杂度,使噪音图像的校正处理能够实时完成.ILS算法具有噪音参量估计准确度高、收敛速度快和计算复杂度低等优点.给出了算法的推导并用仿真数据对算法的有效性进行验证.