The elasto-damage theory of the components assembling model

The potential energy in materials is well approximated by pair functional which is composed of pair potentials and embedding energy. During calculating material potential energy, the orientational component and the volumetric component are derived respectively from pair potentials and embedding energy. The sum of energy of all these two kinds of components is the material potential. No matter how microstructures change, damage or fracture, at the most level, they are all the changing and breaking atomic bonds. As an abstract of atomic bonds, these components change their stiffness during damaging. Material constitutive equations have been formulated by means of assembling all components’ response functions. This material model is called the component assembling model. Theoretical analysis and numerical computing indicate that the proposed model has the capacity of reproducing some results satisfactorily, with the advantages of great conceptual simplicity, physical explicitness, and intrinsic induced anisotropy, etc. Supported by the National Natural Science Foundation of China (Grant Nos. 10572140 and 10232050) and the Ministry of Science and Technology Foundation (Grant No. 2002CB412706)     

One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials     

Evolution of the normal state of a strongly interacting Fermi gas from a pseudogap phase to a molecular Bose gas

Wave-vector resolved radio frequency spectroscopy data for an ultracold trapped Fermi gas are reported for several couplings at T(c), and extensively analyzed in terms of a pairing-fluctuation theory. We map the evolution of a strongly interacting Fermi gas from the pseudogap phase into a fully gapped molecular Bose gas as a function of the interaction strength, which is marked by a rapid disappearance of a remnant Fermi surface in the single-particle dispersion. We also show that our theory of a pseudogap phase is consistent with a recent experimental observation as well as with quantum Monte Carlo data of thermodynamic quantities of a unitary Fermi gas above T(c).     

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.     

铜活化法诊断神光Ⅲ主机装置氘氚中子产额

介绍了铜活化诊断氘氚中子产额的测量原理,分析了62Cu和64Cu两种活化核素在符合测量中的贡献。针对不同范围内的中子产额测量,提出了系统灵敏度相对标定法和64Cu活化核标定法。通过添加中子屏蔽锥测量了标定场所散射中子影响。计算评估了63Cu(n,)64Cu反应过程对活化测量的影响。在神光Ⅲ主机装置上,利用该系统测量了直接驱动氘氚中子产额。实验结果表明：氘氚中子产额在109~1013范围采用相对标定方法较为合适,64Cu活化核的标定方法适用于1012~1016范围内产额测量。标定场所散射中子对灵敏度标定因子影响约0.4%。63Cu俘获辐射反应在64Cu活化核标定中贡献小于1%。目前神光Ⅲ主机装置直接驱动氘氚中子产额约81012。     

扶手椅型石墨烯介观环中的持续电流

在紧束缚近似下, 解析求解了扶手椅型边界石墨烯介观环的能量本征值问题, 计算和讨论了不同大小尺寸的介观环中持续电流随Aharonov-Bohm (A-B)磁通的变化, 并证明了能级和持续电流关于磁通变化的周期性和特殊对称性. 研究表明, 持续电流显著地依赖于介观环的几何结构; 零能量附近的能级可以承载较大的持续电流, 而远离零能量的其他能级对持续电流的贡献很小.     

FOX-7转晶行为的太赫兹光谱及理论计算研究

1, 1 -二氨基- 2, 2 -二硝基乙烯(FOX-7)是一款新型高能钝感炸药, 为了研究温度变化对其分子结构特性的影响, 利用太赫兹时域光谱技术对持续升温(298K→393 K)过程中FOX-7 在0.2—2.5 THz 频率范围内的吸收光谱进行了在线探测, 结果发现随着样品温度的升高, FOX-7 的吸收谱带发生变化, 于384 K 时出现一个新的吸收特征峰, 且该吸收峰的峰强逐渐升高. 基于密度泛函理论(DFT), 对样品在298 K 和393 K 温度下的晶体结构进行了小于2.5 THz 范围内吸收频谱的模拟计算, 完成了对FOX-7 两种晶型实验吸收特征峰的指认. 分析表明FOX-7 的分子结构会受温度的影响而发生改变, 互为异构晶型的基团表现出的振动模式不同, 温度384 K 时FOX-7 开始发生α→β 晶型转变, 且该晶型转变过程是可逆的, 新出现的1.12 THz 特征峰在393 K 时的振动是由—NO₂ 和—NH₂ 的摆动及各自的扭动所致.     

基于光腔衰荡光谱的宽范围水汽探测

介绍基于光腔衰荡光谱技术的光学湿度测量装置．该装置具有高真空兼容性,衰荡腔由低膨胀的殷钢制成,并利用其自身的自由光谱范围实现光谱的自标定．使用单个在1.39 μm的半导体激光器,实 现了从真空、高纯氦气中痕量水汽,一直到大气湿度的测量,可测量的水汽分压范围极大：0.1 μPa～1 kPa．该光学湿度计可用于作为基本水汽标准,以及测定低温下水(冰)的蒸气压．     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si1-xGex合金半导体材料中CiCs 缺陷的性质进行探讨,同时也对比调查了CiOi 缺陷在Si和Si1-xGex合金中的性质. 在不同Ge含量的Si1-xGex合金中CiCs和CiOi缺陷的结构都具有较好的稳定性;从能量学角度,Ge原子不能与C或O原子直接成键. CiCs缺陷的A型和B型结构在Si1-xGex合金中表现出的行为基本类似,但是A型结构随着Ge含量的增加形成能逐渐减小,结构越来越稳定,而B型结构的形成能先有所下降后逐渐增加;A型和B型结构的能量差值随着Ge含量的增加先在小范围内变化后迅速下降. CiOi缺陷形成能的变化特征较为复杂. 纯Si体系在1000K及以上温度的等温退火过程中,CiCs缺陷的A型结构会向B型结构转变;Si1-xGex合金在进行等温退火时CiCs缺陷的A型结构的变化特征与退火温度、Ge含量和Ge取代的位置等因素有关.     

Laser frequency stabilization based on Sagnac interferometric spectroscopy

A simple method based on Sagnac interferometric spectroscopy (SIS) is applied for frequency stabilization of diode lasers. Sagnac interferometric spectra of rubidium vapor are investigated both theoretically and experimentally. The interference signal at the output of the Sagnac interferometer displays a sharp dispersion feature near the atomic resonance. This dispersion curve is used as the feedback error signal to stabilize the laser frequency. Linewidth of a diode laser is stabilized down to 1 MHz by this modulation-free method.