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991.
开展了铝单丝在负极性电流脉冲作用下电爆炸特性的研究.利用皮秒激光探针,搭建了阴影、纹影和干涉的光学诊断平台,得到了不镀膜铝丝典型的能量沉积过程,在电压崩溃时刻其沉积能量为2.4 eV/atom.为了增加金属丝内的沉积能量,开展了相同电参数及金属丝尺寸下的镀膜铝丝电爆炸实验,其沉积能量可达到5 eV/atom,实现了在电压崩溃之前铝丝完全气化(完全气化所需能量为4 eV/atom).阴影图像展示了高密度丝核区域的膨胀过程,不镀膜铝丝平均膨胀速度为2.2 km/s,而镀膜铝丝因为沉积能量大,其膨胀速度约为不镀膜铝丝的2.3倍,高密度区域膨胀速度为5 km/s.由于阴影不能反映低密度等离子体的膨胀,开展了平行双丝实验,通过测量自发光辐射,估算了低密度等离子体的膨胀速度.利用条纹相机拍摄了不镀膜铝丝电爆炸过程中自发光区域的图像.纹影图像清晰地展示了不镀膜铝丝在电爆炸过程中形成的核冕结构,而镀膜铝丝电爆炸过程中核冕结构得到了一定程度的抑制.从干涉图像计算了相移,在轴对称假设下对相移进行阿贝尔逆变换,重构了三维的铝原子数密度分布. 相似文献
992.
Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials. 相似文献
993.
In this paper, we present the theory of constructing optimal generalized helical-wave coupling dynamical systems. Applying the helical-wave decomposition method to Navier-Stokes equations, we derive a pair of coupling dynamical systems based on optimal generalized helical-wave bases. Then with the method of multi-scale global optimization based on coarse graining analysis, a set of global optimal generalized helical-wave bases is obtained. Optimal generalized helical-wave bases retain the good properties of classical helical-wave bases. Moreover, they are optimal for the dynamical systems of Navier-Stokes equations, and suitable for complex physical and geometric boundary conditions. Then we find that the optimal generalized helical-wave vortexes fitted by a finite number of optimal generalized helical-wave bases can be used as the fundamental elements of turbulence, and have important significance for studying physical properties of complex flows and turbulent vortex structures in a deeper level. 相似文献
994.
In this paper, the theory of constructing optimal dynamical systems based on weighted residual presented by Wu & Sha is applied to three-dimensional Navier-Stokes equations, and the optimal dynamical system modeling equations are derived. Then the multiscale global optimization method based on coarse graining analysis is presented, by which a set of approximate global optimal bases is directly obtained from Navier-Stokes equations and the construction of optimal dynamical systems is realized. The optimal bases show good properties, such as showing the physical properties of complex flows and the turbulent vortex structures, being intrinsic to real physical problem and dynamical systems, and having scaling symmetry in mathematics, etc.. In conclusion, using fewer terms of optimal bases will approach the exact solutions of Navier-Stokes equations, and the dynamical systems based on them show the most optimal behavior. 相似文献
995.
WeiPing Liu ZhiHong Li JiangJun He XiaoDong Tang Gang Lian Zhu An JianJun Chang Han Chen QingHao Chen XiongJun Chen ZhiJun Chen BaoQun Cui XianChao Du ChangBo Fu Lin Gan Bing Guo GuoZhu He Alexander Heger SuQing Hou HanXiong Huang Ning Huang BaoLu Jia LiYang Jiang Shigeru Kubono JianMin Li KuoAng Li Tao Li YunJu Li Maria Lugaro XiaoBing Luo HongYi Ma ShaoBo Ma DongMing Mei YongZhong Qian JiuChang Qin Jie Ren YangPing Shen Jun Su LiangTing Sun WanPeng Tan Isao Tanihata Shuo Wang Peng Wang YouBao Wang Qi Wu ShiWei Xu ShengQuan Yan LiTao Yang Yao Yang XiangQing Yu Qian Yue Sheng Zeng HuanYu Zhang Hui Zhang LiYong Zhang NingTao Zhang QiWei Zhang Tao Zhang XiaoPeng Zhang XueZhen Zhang ZiMing Zhang Wei Zhao Zuo Zhao Chao Zhou JUNA Collaboration 《中国科学:物理学 力学 天文学(英文版)》2016,59(4):642001
Jinping Underground laboratory for Nuclear Astrophysics(JUNA) will take the advantage of the ultra-low background of CJPL lab and high current accelerator based on an ECR source and a highly sensitive detector to directly study for the first time a number of crucial reactions occurring at their relevant stellar energies during the evolution of hydrostatic stars. In its first phase, JUNA aims at the direct measurements of~(25)Mg(p,γ)~(26)Al,~(19)F(p,α)~(16)O,~(13)C(α,n)~(16)O and ~(12)C(α,γ)~(16)O reactions. The experimental setup,which includes an accelerator system with high stability and high intensity, a detector system, and a shielding material with low background, will be established during the above research. The current progress of JUNA will be given. 相似文献
996.
Oleg B. Shchekin Peter J. Schmidt Fahong Jin Nate Lawrence Kenneth J. Vampola Helmut Bechtel Danielle R. Chamberlin Gerd O. Mueller 《固体物理学:研究快报》2016,10(4):310-314
Droop, the decrease of efficiency with increased power density, became a major topic with InGaN LEDs, after its introduction in 2007. This paper provides insight into droop in localized center luminescence phosphors, exemplified here by Eu2+ doped materials. This topic is of increasing importance, as high brightness blue LEDs have reached outputs >1 W/mm2. The nonlinearities in phosphor quantum efficiency result in drive‐dependent color point shift and reduction of overall efficiency of phosphor converted white LEDs which utilize Eu2+ activated phosphors. The efficiency quenching can be traced back to two processes, well‐known in laser physics, excited state absorption or/and cross relaxation by Foerster/Dexter transfer. Both processes lead to reduction in phosphor efficiency, but they can be differentiated. Understanding the root cause of efficiency quenching opens ways to minimize the practical consequences. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
997.
LiXia Zhao ShiChao Zhu ChunHui Wu Chao Yang ZhiGuo Yu Hua Yang Lei Liu 《中国科学:物理学 力学 天文学(英文版)》2016,59(10):107301
Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles. Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs. 相似文献
998.
Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides 下载免费PDF全文
We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
999.
Variable electron-phonon coupling in isolated metallic carbon nanotubes observed by Raman scattering
Wu Y Maultzsch J Knoesel E Chandra B Huang M Sfeir MY Brus LE Hone J Heinz TF 《Physical review letters》2007,99(2):027402
We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm(-1) to 110 cm(-1)) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman features is understood as the consequence of coupling of the phonon to electron-hole pairs, the strength of which varies with the nanotube chiral index and the position of the Fermi energy. 相似文献
1000.
Zhao JF Ou HW Wu G Xie BP Zhang Y Shen DW Wei J Yang LX Dong JK Arita M Namatame H Taniguchi M Chen XH Feng DL 《Physical review letters》2007,99(14):146401
The electronic structure of a new charge-density-wave system or superconductor, 1T-Cu(x)TiSe(2), has been studied by photoemission spectroscopy. A correlated semiconductor band structure is revealed for the undoped case, which resolves a long-standing controversy in the system. With Cu doping, the charge-density wave is suppressed by the raising of the chemical potential, while the superconductivity is enhanced by the enhancement of the density of states, and possibly suppressed at higher doping by the strong scattering. 相似文献