Non-nearest-neighbor jumps in 2D diffusion: Pd on W(110)

A variety of jumps has in the past been identified in diffusion of atoms on 1D channeled surfaces. To establish the jump processes important in diffusion on a 2D surface, the movement of individual Pd atoms has been examined on W(110). From the distribution of displacements of Pd at high temperatures, double jumps are found along the close-packed <111>. For the first time, sizable differences are also observed between the mean-square displacements along x and y, which demonstrate unexpected contributions from jumps along <110>, but not along <001>. These jumps proceed over activation barriers higher than for single jumps, under conditions predicted from previous work with Pd on the channeled W(211).     

Nanomanipulator-assisted fabrication and characterization of carbon nanotubes inside scanning electron microscope

We have installed two nanomanipulators, which can travel about 20mm with a minimum increment of 1 nm, for manipulation of nanostructured materials inside field-emission scanning electron microscope (FE-SEM). Both manipulators render motions in x, y, and z directions, providing various manipulation freedoms such as moving, bending, cutting, and biasing. In addition, we have conducted in situ characterization of the electrical breakdown of multi-walled carbon nanotubes (MWCNTs). Our results demonstrate the possibility that MWCNTs can be used as a gas sensor.     

Effect of conformational heterogeneity on excitation energy transfer efficiency in directly meso-meso linked Zn(II) porphyrin arrays

We have investigated the overall excitation energy relaxation dynamics in linear porphyrin arrays as well as the energy transport phenomena by attaching an energy acceptor to one end of a linear porphyrin array by using steady state and time-resolved spectroscopic measurements. We have revealed that the solvation dynamics as well as the conformational dynamics contributes significantly to the energy relaxation processes of linear porphyrin arrays. Consequently, long porphyrin arrays no longer serve as good energy transmission elements in donor-acceptor linked systems due to conformational heterogeneities which provide the non-radiative deactivation channels as energy quenchers.     

Tuning of particle morphology and pore properties in mesoporous silicas with multiple organic functional groups

A synthetic method has been developed that can control both multifunctionalization and morphology of the mesoporous organic-inorganic hybrid materials by introducing different molar ratios of organoalkoxysilane precursors to a base-catalyzed co-condensation of silicate.     

Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Amorphous silicon quantum dots (a-Si QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that a-Si QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of a-Si QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the a-Si QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the a-Si QD, a (nm) by E(eV) = 1.56+2.40/a(2), which is a clear evidence for the quantum confinement effect in a-Si QDs.     

Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

We report a strongly nonlinear pressure dependence of the band gaps and large downward shifts of the conduction band edges as functions of composition in ZnS xTe (1-x) and ZnSe (y)Te (1-y) alloys. The dependencies are explained by an interaction between localized A1 symmetry states of S or Se atoms and the extended states of the ZnTe matrix. These results, combined with previous studies of III-N-V materials define a new, broad class of semiconductor alloys in which the introduction of highly electronegative atoms leads to dramatic modifications of the conduction band structure. The modifications are well described by the recently introduced band anticrossing model.     

The impact of investment lags on investment decision

This paper suggests a valuation framework for an investment project through the concept of real options. Generally, in real asset world, decision time and its payment time are not identical. This so-called investment lag problem should be considered when valuing real assets. When investment lags exist, firms’ accommodation capacities play important roles. In this paper, the real effect of investment lag on investment value is tested upon various conditions. We show the valuation process of real assets under the risk-neutral world. The closed-form formula is also provided for valuing real assets, including R&D project.