激光等离子体推进技术研究新进展

随着激光技术的发展，激光等离子体推进技术越来越来呈现出其独特的优势，现在已成为当前科学研究和推进领域的研究热点之一．文章对激光等离子体推进技术的应用以及目前的研究进展进行了总结．     

高分辨率X射线显微成像及其进展

介绍了高分辨率X射线显微成像产生背景和发展过程，着重分析了基于光学元件波带片的放大成像的基本原理，并简述了高分辨率三维成像的有关理论。同时给出国内外高分辨率X射线显微成像研究的最新进展，展望了高分辨率X射线显微成像的应用前景。     

射流注入角对平板气膜冷却特性影响的实验研究

本文对不同射流注入角的典型单排孔冷却结构的平板气膜冷却特性进行了实验研究,研究对象为轴线与主流来流方向分别成30°、60°、90°的射流孔板,对它们在吹风比为0.5、1.0、1.5条件下的射流孔下游的绝热气膜冷却效率分布特性进行了分析.在吹风比M=0.5时,三个射流注入角条件下近孔区域都能形成较好的冷气覆盖效果;M=1.0时,三者的下游横向平均冷却效率基本相同;M=1.5时,注入角60°的条件下冷却效果最好.     

动态激光衍射法测量细丝直径

基于夫琅禾费衍射理论和巴比涅互补原理,提出了利用激光衍射对细丝直径进行动态测量的方法.该方法具有测量精度高、速度快、非接触、使用方便且易于微机联接实现自动化测量等优点.     

明齐止水照与天长--物理知识在中国古镜中的应用

古镜是古代人照面容的器具，至迟也在商代出现．镜的背面多饰以花纹图案，题材广泛，内容丰富．自战国末年开始，镜的背面出现铭文，书体多变，文体活泼．在镜子不断改进和发展的过程中，镜子的功能逐步拓宽，除照容外，有的镜子还具有取火、看病等功能。所以，古镜不仅是古代人的日常生活用品，同时也是一种具有珍贵艺术价值的工艺品和科学实验用品．它从不同程度上反映了各个历史时期政治、     

测量冷原子温度的理论与近似拟合公式的误差分析

对短程飞行时间法(tim e-of-flight,TOF)中推算冷原子温度的理论拟合公式与近似拟合公式进行了误差分析与比较。研究表明:对于使用短程飞行吸收光谱信号推测冷原子团温度,当探测光光斑半径与冷原子团高斯半径之比k小于0.2时,理论拟合公式和近似拟合公式能很好的相符,随着探测光光斑半径与冷原子团高斯半径比值的逐渐增大,用近似拟合公式所得TOF吸收信号与用理论拟合公式所得TOF吸收信号的误差也将逐渐增大,当比值为0.5时,用近似拟合公式所得TOF吸收信号的误差将增大到20%。     

轨道序和巡游性对尖晶石结构钒氧化物AV2O4 (A = Mn,Fe, Co) 物性影响的研究

在尖晶石钒基氧化物AV_2O_4中,因为自旋阻挫、轨道序、巡游性等独特的内禀属性间存在着相互合作和竞争,所以该体系常常表现出复杂而有趣的物理现象。通过对A位磁性离子的调控,我们详细研究该体系中不同物性的起源,比如磁相变与结构相变的不同起因,局域和巡游电子的交叉行为等等。我们以Mn_(1-x)Co_x V_2O_4和Fe_(1-x)Co_x V_2O_4体系为研究对象,通过变温X射线衍射、磁化率、比热和中子散射等测试手段,结合第一性原理计算,对其物性起源进行了详细的研究。我们发现:(i)在低Co2+离子掺杂时,体系受到局域V~(3+)离子以及A位Fe~(2+)离子的轨道序作用,往往会在磁有序附近伴随着结构相变的出现,以至于弱化体系中钒离子独立形成的四面体造成的几何阻挫。这也说明Co~(2+)离子低掺杂下,该体系有着强的自旋–晶格耦合;(ii)在高Co~(2+)离子掺杂时,由于巡游性的增强,轨道序的弱化,JAB交换相互作用增强,体系也表现出明显的磁各向同性。因此磁相变温度向更高的温度移动,而结构相变温度向低温移动甚至消失。     

Atomistic simulation of site preference, Curie temperature, and lattice vibration of Nd2Co7 - xFex

The effects of Fe substitution for Co on the structural stability and the site preference of intermetallics Nd 2 Co 7-x Fe x with a hexagonal Ce 2 Ni 7-type structure are studied by using a series of interatomic pair potentials.In Nd 2 Co 7-x Fe x,Fe atoms are substituted for Co atoms with a strong preference for the 6h sites and the order of site preference is 6h,4e,4f,2a,and 12k.Calculated lattice parameters are found to be consistent with the reported results in the literature.The variation behaviour of the Curie temperature of Nd 2 Co 7-x Fe x is explained qualitatively by the exchange interaction model.The properties related to lattice vibration,such as phonon density of states and Debye temperature,are first evaluated for the Nd 2 Co 7-x Fe x compounds.     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.