Analysis of nonlinear sliding structures by modified stochastic linearization methods

Probabilistic characteristics of a sliding structure is investigated by using new versions of stochastic linearization technique. The structure is composed of base part and upper part, which are connected to each other in a spring-damping system. Coulomb friction between the base structure and earth ground is considered. Two alternative versions of stochastic linearization approach, suggested by X. Zhang and I. Elishakoff, respectively, are applied to such a sliding structure to evaluate its statistical properties. Compared with the results of Monte Carlo simulation, the two new approaches are performing much better than the conventional one in their applications to the sliding structure. Moreover, numerical results indicate that the criterion proposed by Elishakoff turns out to be superior to all other versions in the problem under study. Numerical results also suggest that the entire structure may be replaced by the rigid body in the sliding problem as long as the difference of velocity responses are considered less important than those of displacement responses.     

Compensated Compactness, Paracommutators, and Hardy Spaces

LetB₁: ⁿ× ^N₁→ ^m₁,B₂: ⁿ× ^N₂→ ^m₂andQ: ^m₂→ ^m₁be bilinear forms which are related as follows: ifμandνsatisfyB₁(ξ, μ)=0 andB₂(ξ, ν)=0 for someξ≠0, thenμ^τQν=0. Supposep⁻¹+q⁻¹=1. Coifman, Lions, Meyer and Semmes proved that, ifuL^p( ⁿ) andvL^q( ⁿ), and the first order systemsB₁(D, u)=0,B₂(D, v)=0 hold, thenu^τQvbelongs to the Hardy spaceH¹( ⁿ), provided that both (i)p=q=2, and (ii) the ranks of the linear mapsB_j(ξ, ·) : ^N_j→ ^m₁are constant. We apply the theory of paracommutators to show that this result remains valid when only one of the hypotheses (i), (ii) is postulated. The removal of the constant-rank condition whenp=q=2 involves the use of a deep result of Lojasiewicz from singularity theory.     

用于光学神经网络硬件系统误差纠正的虚拟神经网络

提出了一种用于修正光学神经网络硬件系统误差的虚拟神经网络模型，光学实验结果表明该网络能够有效地消除硬件系统误差对实验结果的影响。     

Medium-range structural order in liquid Ni20Al80 alloy: Experimental and molecular dynamics studies

In this Letter, structural properties of liquid Ni₂₀Al₈₀ have been studied through molecular dynamics (MD) simulations, and results agree well with X-ray experiments. The prepeak in the structure factor manifests the existence of medium-range structural order (MRSO) in liquid Ni₂₀Al₈₀. Analyses in MRSO reveal the dominance of ideal icosahedra and defective icosahedra which, furthermore, form clusters and share common atoms.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

An enantioselective Michael addition of malonate to nitroalkenes catalyzed by low loading demethylquinine salts in water

An enantioselective Michael addition of malonate to nitroalkenes is efficiently catalyzed by low loading demethylquinine salts in water; the yield range from 49% to 93% and the ee up to 90%.     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.