不同氮源制备CNx纳米管薄膜及其低场致电子发射性能

采用高温热解法,分别以氯化铵(NH4Cl)和乙二胺(C2H8N2)为氮源在洁净的硅片上沉积生长CNx纳米管薄膜.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行形貌观察和表征.结果显示不同氮源制备出的CNx纳米管薄膜的洁净度、有序度以及纳米管的结构明显不同.热解乙二胺(C2H8N2)/二茂铁(C10H10Fe)制备出的结晶度较低的"竹节状"结构CNx纳米管平行基底表面有序生长,而且低场致电子发射性能优越,开启电场1.0V/μm,外加电场达到2.89V/μm时发射电流密度为860μA/cm2.     

航天器热试验查询统计系统的设计与实现

针对航天器真空热试验数据量大、数据利用率不高的特点,提出了一种基于数据库的试验数据查询统计方法方法,以改善现有的以文件系统为主的数据存储模式;通过对试验数据格式的分析和现有工作流程的优化,将试验数据查询系统分为系统管理、试验管理、策略管理和统计分析等四个大的功能模块,利用过滤算法自动生成试验工况点信息,并通过试验工况点自动生成单次试验的统计报告,进而实现对所有试验数据的综合查询统计功能;目前系统已应用于航天器热试验任务中,经过测试,系统功能和性能指标满足试验需求,解决了实际问题。     

Progress of nanoscience in China

Fast evolving nanoseienees and nanotechnology in China has made it one of the front countries of nanotechnology development. Ill this review, we summarize some most recent progresses in nanoseienee research and nanotechnology development in China. The topics we selected in this article include llano-fabrication, nanocatalysis, bioinspired nanoteehnology, green printing nanotechnology, nanoplasmonics, nanomedicine, nanomaterials and their applications, energy and environmental nanoteehnology, nano EHS （nanosafety）, etc. Most of them have great potentials in applications or application-related key issues in future.     

一种改进的基于信息传播率的复杂网络影响力评估算法

评价网络中节点的信息传播影响力对于理解网络结构与网络功能具有重要意义.目前,许多基于最短路径的指标,如接近中心性、介数中心性以及半局部(SP)指标等相继用于评价节点传播影响力.最短路径表示节点间信息传播途径始终选择最优方式,然而实际上网络间的信息传播过程更类似于随机游走,信息的传播途径可以是节点间的任一可达路径,在集聚系数高的网络中,节点的局部高聚簇性有利于信息的有效扩散,若只考虑信息按最优传播方式即最短路径传播,则会低估节点信息传播的能力,从而降低节点影响力的排序精度.综合考虑节点与三步内邻居间的有效可达路径以及信息传播率,提出了一种SP指标的改进算法,即ASP算法.在多个经典的实际网络和人工网络上利用SIR模型对传播过程进行仿真,结果表明ASP指标与度指标、核数指标、接近中心性指标、介数中心性指标以及SP指标相比,可以更精确地对节点传播影响力进行排序.     

高超声速可压缩流中粗糙壁热流研究

用计算流体力学（CFD）数值模拟和理论方法对高超声速可压缩湍流中粗糙壁面热增量进行研究. 着重考虑粗糙单元密度和粗糙单元形状对粗糙表面热流的影响. 结果表明： ①粗糙单元密度变化时, CFD数值方法计算所得的粗糙单元等效热流随着粗糙单元密度的降低而增加, 理论方法预测结果的规律随方法不同而不同;②在相同粗糙单元密度和高度时,如果粗糙单元形状改变,CFD计算结果也随之发生改变. 理论预测方法所得结果不发生变化.     

High-temperature impedance spectroscopy of BaFe0.5Nb0.5O3 ceramics doped with Bi0.5Na0.5TiO3

Bi_0.5Na_0.5TiO₃ (BNT)-doped BaFe_0.5Nb_0.5O₃ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy.     

Fabrication of widely tunable ridge waveguide DBR lasers for WDM-PON

We report the fabrication of widely tunable ridge waveguide distributed Bragg reflector(DBR) lasers with InGaAsP butt-joint as grating material. The shape of the butt–joint interface is found to have significant effect on the properties of the lasers. It is shown that irregular mode jumps during wavelength tuning can be avoided by a V-shaped butt–joint interface. From the fabricated device, 23 channels with 0.8 nm spacing and greater than 35 dB side mode suppression ratios are obtained. The different tuning characteristics of the ridge waveguide and the previously reported buried ridge stripe DBR lasers are discussed. Combined with the wide tuning range and the simple structure, the ridge waveguide DBR lasers are promising for use in wavelength division multiplexing passive optical networks(WDM-PONs).     

F8BT：P3HT共混薄膜的放大自发辐射

研究了聚合物poly（9,9-dioctylfluorene-co-benzothiadiazole）（F8BT）和poly （3-hexylthiophene）（P3HT）共混薄膜的放大自发辐射（ASE）现象,对影响其阈值的两个因素--增益和损耗进行了详细的研究。结果显示,共混聚合物的发光效率随着P3HT所占比例的增加有所降低。当P3HT比例低于20%时,发光效率降低不多,而其损耗则随着P3HT的增加显著减小。F8BT和P3HT混合后,光损耗系数从7.8 cm^-1下降到4 cm^-1左右。这表明F8BT：P3HT共混聚合物光波导的ASE阈值降低主要是由于其损耗的降低而导致的。ASE阈值的降低预示该材料体系容易实现电泵浦激光。     

Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures (nanorod, nanotip and nanocrater) arrays are successfully realized by using chemical vapour deposition (CVD) technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid (VLS) mechanism. To investigate the factors affecting field emission (FE) properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AlN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2~V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.     

Quasiprobability distributions of a new kind of even and odd nonlinear coherent states

Using a numerical computational method, quasiprobability distributions of new kinds of even and odd nonlinear coherent states (EONLCS) are investigated. The results show that the distributions of the new even nonlinear coherent states (NLCS) are distinct from those of the new odd NLCS and imply that the new EONLCS always exhibit some different nonclassical effects. Finally, with the aid of newly introduced intermediate coordinate-momentum representation in quantum optics, the tomograms of the new EONLCS are calculated. This is a new way of obtaining the tomogram function.