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Yibo Li Lingxiao Zhao Laiquan Shi Lingshang Lin Qinghe Cao Cunxu Wei 《Molecules (Basel, Switzerland)》2022,27(6)
Sweet potato is a root tuber crop and an important starch source. There are hundreds of sweet potato varieties planted widely in the world. Starches from varieties with different genotype types and originating from different countries have not been compared for their physicochemical properties. In the research, starches from 44 sweet potato varieties originating from 15 countries but planted in the same growing conditions were investigated for their physicochemical properties to reveal the similarities and differences in varieties. The results showed that the 44 starches had granule size (D[4,3]) from 8.01 to 15.30 μm. Starches had different iodine absorption properties with OD680 from 0.259 to 0.382 and OD620/550 from 1.142 to 1.237. The 44 starches had apparent amylose content from 19.2% to 29.2% and true amylose content from 14.2% to 20.2%. The starches exhibited A-, CA-, CC-, or CB-type X-ray diffraction patterns. The thermograms of 44 starches exhibited one-, two-, or three-peak curves, leading to a significantly different gelatinization temperature range from 13.1 to 29.2 °C. The significantly different starch properties divide the 44 sweet potato varieties into different groups due to their different genotype backgrounds. The research offers references for the utilization of sweet potato germplasm. 相似文献
233.
D形光纤Bragg光栅弯曲灵敏度的理论和实验研究 总被引:1,自引:1,他引:1
用材料力学理论分析了D形光纤Bragg光栅(D-shaped fiber Bragg grating,D-FBG)以及常规光纤Bragg光栅由弯曲引起的轴向应变,得到了光栅Bragg波长漂移的弯曲敏感特性.实验结果和理论计算结果基本相符.与常规FBG相比,该D-FBG的弯曲灵敏度要高近80倍.因此D-FBG可以直接应用于弯曲形变的测量,以及间接应用于压力、加速度等物理量的测量.理论分析和实验结果对采用该类型光纤光栅的器件和传感系统的设计具有参考意义. 相似文献
234.
为获得与GaN薄膜晶格失配小的衬底材料,报道了利用气相传输平衡技术(VTE)在(100)-βGa2O3单晶衬底上制备高度[001]取向LiGaO2薄膜的方法。经过X射线衍射分析表明得到的薄膜是由单相LiGaO2组成。利用扫描电镜(SEM)观察表面形貌,发现经气相传输平衡技术处理得到的薄膜表面形貌主要受温度的影响,表面晶粒尺寸随温度上升而增大。而X射线衍射测试表明随着温度上升,所得到的薄膜也从多晶向单晶化转变。在经过退火处理后,通过观察吸收谱发现LiGaO2薄膜中产生色心,并且色心的种类与温度有关。表明可以通过气相传输平衡技术技术,在远低于LiGaO2熔点的温度制备外延GaN用(001)LiGaO2∥(100)β-Ga2O3复合衬底。 相似文献
235.
Rosner JL Adam NE Alexander JP Berkelman K Cassel DG Duboscq JE Ecklund KM Ehrlich R Fields L Galik RS Gibbons L Gray R Gray SW Hartill DL Heltsley BK Hertz D Jones CD Kandaswamy J Kreinick DL Kuznetsov VE Mahlke-Krüger H Meyer TO Onyisi PU Patterson JR Peterson D Phillips EA Pivarski J Riley D Ryd A Sadoff AJ Schwarthoff H Shi X Stroiney S Sun WM Wilksen T Weinberger M Athar SB Avery P Breva-Newell L Patel R Potlia V Stoeck H Yelton J Rubin P Cawlfield C Eisenstein BI Karliner I Kim D Lowrey N 《Physical review letters》2006,96(9):092003
We determine the dielectron widths of the Gamma(1S), Gamma(2S), and Gamma(3S) resonances with better than 2% precision by integrating the cross section of e+e- -->Gamma over the e+e- center-of-mass energy. Using e+e- energy scans of the Gamma resonances at the Cornell Electron Storage Ring and measuring Gamma production with the CLEO detector, we find dielectron widths of 1.252+/-0.004(sigma(stat))+/-0.019(sigma(syst)) keV, 0.581+/-0.004+/-0.009 keV, and 0.413+/-0.004+/-0.006 keV for the Gamma(1S), Gamma(2S), and Gamma(3S), respectively. 相似文献
236.
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser 下载免费PDF全文
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current. 相似文献
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Liang Shi 《Journal of luminescence》2011,131(3):523-525
La2BaZnO5:Eu3+ (0.05 mol%) was prepared by a solid-state reaction at high temperature. X-ray powder diffraction analysis confirmed the formation of single phase La2BaZnO5. Luminescence properties of La2BaZnO5:Eu3+ are investigated by site-selective laser-excitation and emission spectroscopy at 18 K. Two different crystallographic sites for Eu3+ corresponding to the La3+ and Ba2+ sites are identified from the 7F0→5D0 excitation spectra obtained by monitoring the 5D0→7FJ (J=1, 2, …, 6) emissions. It is found that Eu3+ substituted for the Ba2+ ion experiences stronger crystal-field strength than Eu3+ substituted for the La3+ ion. Energy transfer between the two crystallographic Eu3+ centers is investigated by luminescence decay curves at 18 K. 相似文献