Synthesis of hierarchical Na<Subscript>2</Subscript>FeP<Subscript>2</Subscript>O<Subscript>7</Subscript> spheres with high electrochemical performance via spray drying

Hierarchical Na₂FeP₂O₇ spheres with nanoparticles were successfully fabricated by a facile spray drying method. A relatively low drying temperature was introduced in order to form a carbon layer on the surface. As a cathode material for sodium-ion batteries, it delivered a reversible capacity of 84.4 mAh g^?1 at 0.1 C and showed excellent cycling and rate performance (64.7 mAh g^?1 at 5 C). Furthermore, a full sodium battery was fabricated using SP-Na₂FeP₂O₇ as the cathode and hard carbon as the anode, suffering almost no capacity loss after 400 cycles at 1 C. Due to its superior electrochemical property and the low materials cost, Na₂FeP₂O₇ is becoming a promising cathode material for large-scale energy storage systems.     

基于光频调节的干涉型光纤水听器相位补偿检测方法

提出了一种基于光源频率调节的干涉型光纤水听器主动相位补偿的信号检测方法。详细介绍了该方法的基本检测原理,对信号解调误差进行了理论分析与仿真。为了验证该方法的可行性,搭建了实验系统,并编写了实时的信号采集、处理程序,对某一干涉型光纤水听器的声压灵敏度进行了测试。在频带20 Hz-1.3 kHz上,平均声压灵敏度为-162.2 dB(0 dB=1 rad/μPa),波动小于±0.8 dB,与采用相位载波调制解调方法测量的结果基本吻合。实验结果证明该方法是有效的。由于传感部分不含有源器件,便于实现全光纤化,且解调算法简单、检测频带宽,该方法能被广泛应用到各种干涉型光纤传感器的信号检测当中。     

准相位匹配PPKTP晶体连续倍频13 mW绿光输出

采用高压脉冲电场极化,通过电光效应实时监控、倍频通光二维监控等手段的应用,制备出周期为9μm、长为8 mm、宽为3 mm、厚为1 mm的周期极化KTiOPO4晶体(PPKTP);倍频通光实验中,当波长1064 nm的基频光功率为1 W时,得到了功率为13.5 mW的532 nm连续倍频绿光输出,单通倍频转换效率为1.35%,归一化转换效率为1.69%/(W.cm),接近理论最大值。     

GaAs异质结材料BOA光开关特性分析

本文较为详细地讨论了GaAs异质结材料BOA型光开关的特性;并应用转移矩阵理论和有效折射率法计算和分析了电极结构与器件半波电压和串音度的关系.结果表明:通过优化设计电极的宽度可以获得BOA型光开关最小的半波电压;电极位置的对称性对器件串音度起决定性的影响.采用自对准工艺技术可以比较准确的控制电极的位置.分析表明:要得到<-40dB的串音度,电极位置偏差必须小于0.3μm.     

双偏振结构保偏光纤偏振器的研制

提出了保偏光纤偏振器的一种串联结构,即双偏振结构,报道了研制的结果。并通过对单偏振结构和双偏振结构器件测试结果的比较,得出双偏振结构的保偏光纤偏振器可使器件达到高消光比,并且有稳定的温度特性。     

电流变液成链过程的一种序参量描述

A simple long-range-order parameterPis defined for describing the process of formation of chains in the electric field direction. The free energy of the system is taken to be the sum of the internal energy, the electrostatic interaction and configuration entropy as a function o P. Calculated results indicate that the critical parameter is a function of electric field, temperature, misfit dielectric coefficients and concentration of particles.     

基于D-T紧凑型中子源的快中子照相准直屏蔽体设计及中子束特性模拟研究

中子照相是一种重要的无损检测技术,它能用于火工产品、毒品和核燃料元件等的检测。基于紧凑型D-T中子发生器,完成了一个用于快中子照相的准直屏蔽体系统（BSA）的物理设计。根据D-T中子源的能谱和角分布建立了中子源模型,采用MCNP4C蒙特卡罗程序,模拟了准直屏蔽体系统中中子和γ射线的输运,准直中子束相对于单位源中子的中子注量可以达到9.30×10-6 cm-2,准直中子束中主要是能量大于10 MeV的快中子;在设置的样品平面直径14 cm的照射视野范围,准直束中子注量的不均匀度为4.30%,准直束中中子注量与γ注量的比值为17.20,中子通量和中子注量比值J/Φ为0.992,说明准直中子束有好的平行性;准直屏蔽体外的泄露中子注量率与准直束中子注量率相比降低了2个量级。所设计的准直屏蔽体能满足快中子照相的要求。Neutron radiography is an important nondestructive testing technique. It can be used to detect the explosive devices, drug and the nuclear fuel element, etc. A beam-shaping-assembly (BSA) based on a compact D-T neutron generator is designed for fast neutron radiography in this paper. D-T neutron source model is constructed based on the neutron energy spectrum and angular distribution data. The transportation of neutron and γ-ray in the BSA is simulated using MCNP4C code. The neutron fluence of the collimated neutron beam with respect to the neutron source of the unit source is 9.30×10-6 cm-2. The collimated neutron beams is mainly fast neutrons with energies greater than 10 MeV. In the irradiation field range with a diameter of 14 cm, the neutron fluence uniformity of the collimated beam is 4.3%, the ratio of the neutron fluence to the gamma fluence in the collimated beam is 17.20, and the neutron flux and the neutron fluence ratio (J/Φ) is 0.992 which indicates that the collimated neutron beam has good parallelism. The leakage neutron fluence in outside of BSA is two orders of magnitude lower than that of the collimated neutron beam. The designed BSA can meet the need of fast neutron radiography.     

Graphene field-effect transistors with ferroelectric gating

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (n(BG)) provided by normal dielectric gating. More importantly, we prove that n(BG) can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric field-effect transistors with resistance change over 500% and reproducible no-volatile switching over 10? cycles.     

Improved synthesis of diethyl 2,6-dimethyl-4-aryl-4H-pyran-3,5-dicarboxylate under ultrasound irradiation

Diethyl 2,6-dimethyl-4-aryl-4H-pyran-3,5-dicarboxylates (1) have been synthesized by the reaction of aryl aldehyde and 1,3-diketone catalyzed by ZnCl₂ under ultrasound irradiation. The effects of changes in the ultrasonic power, temperature, and reaction time are discussed. With the optimized reaction conditions, various aryl aldehydes were used to synthesize 4H-pyrans (1) under the influence of ultrasound irradiation. Compared with the conventional thermal methods, the remarkable advantages of this method are the simple experimental procedure, shorter reaction time and high yield of product.     

磁性功能化酚醛树脂的合成及对金属离子的吸附性能

磁性功能化酚醛树脂的合成及对金属离子的吸附性能;环氧酚醛树脂;螯合;金属离子;溶胀;吸附容量;吸附动力学