类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

四个麦芽品质性状的杂种优势和相关分析

本文对四个主要麦芽品质性状—a一淀粉酶活力、麦芽汁粘度、麦芽汁色度和搪化力进行了杂种优势和相关分析.(1)相对优势结果表明，在84个组合次中，呈正向优势的46个，占54.76男，负向优势34个，占40.48男，无显性4个，占4.75男;(2)四个品质性状的中亲优势平均值分别为一6.117、一9.965 40.452和一。.545s a-淀粉酶活力和糖化力的超高亲优势分别为一14.578和一8.201,麦芽汁粘度和色度的超低亲优势分别为5.442和70.455.四个性状杂种优势的变异系数均很大.(3)麦芽汁色度的F，对MP的回归系数(B)和相关系数(r)均达显著水平，分别为。..43和0.50，麦芽汁粘度的相关系数达显著水平，为一。.45,其余均未达显著水平，(4)除麦芽汁色度性状外，另三个性状的中亲优势、超亲优势和特殊配合力的相关均达显著或极显著水平.(5)四个麦芽品质性状间的相关结果表明，仅有a-淀粉酶活力和麦芽汁粘度间呈极显著负相关(r=一0.56').最后，文章根据实验结果，就啤酒大麦麦芽品质改良的遗传育种及其杂种优势应用进行了初步讨论.     

On a new system of nonlinear A-monotone multivalued variational inclusions

In this paper, we introduce and study a new system of nonlinear A-monotone multivalued variational inclusions in Hilbert spaces. By using the concept and properties of A-monotone mappings, and the resolvent operator technique associated with A-monotone mappings due to Verma, we construct a new iterative algorithm for solving this system of nonlinear multivalued variational inclusions associated with A-monotone mappings in Hilbert spaces. We also prove the existence of solutions for the nonlinear multivalued variational inclusions and the convergence of iterative sequences generated by the algorithm. Our results improve and generalize many known corresponding results.     

变参数波振器中小信号增益公式

利用微扰展开技术推导出变参数波振器的小信号增益两个近似求积表达式并将其计算结果与数值模拟结果进行了比较,二者吻合很好。利用近似解析式对小信号增益进行了初步探讨,得到了电子入射能量可低于初始谐振能,能散度允许范围受波振器设计影响以及降低锥度改变率可提高小信号增益等新结论。     

苯对N,N-二甲基甲酰胺化合物1H NMR的影响研究

本文研究了N,N-二甲基甲酰胺(DMF)在四氯化碳和苯混合溶剂中的¹H NMR。观察到N,N-二甲基甲酰胺(DMF)分子中两个甲基和混合溶剂中苯的共振吸收峰的化学位移随苯的摩尔分数增加而逐渐移向高场,而且两个甲基共振吸收峰向高场移动的程度不同,α甲基较β甲基为甚。DMF分子中两个甲基和混合溶剂中苯的化学位移可以用线性方程表示(δ=A+Bx),这里x是混合溶剂中苯的摩尔分数。相关系数R接近于-1。     

Growth of single-crystal magnetite nanowires from Fe3O4 nanoparticles in a surfactant-free hydrothermal process

Single-crystal magnetite nanowires with average diameter of ca. 20 nm and length of up to several micrometers were prepared by a simple alkaline surfactant-free hydrothermal process. The crystallinity, purity, morphology, and structural features of the as-prepared magnetite nanowires were investigated by powder X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction. The composition and length of nanowires depends on the pH, with higher pH favoring longer nanowires composed entirely of Fe₃O₄. A mechanism for nanowire growth is proposed.     

A hybrid-Trefftz element containing an elliptic hole

Much work on special elements that simplify geometrical modelling of structures containing holes, cracks and/ or inclusions has been reported extensively in the literature. This paper presents a hybrid-Trefftz element containing elliptic hole formulated using Hellinger–Reissner principle by employing trial functions based on the mapping technique and the Cauchy integral method. The element presented in this paper could be regarded as an improved formulation over Piltner [Special finite elements with holes and internal cracks, Int. J. Numer. Methods Eng. 21 (1985) 1471–1485] element because the chosen trail functions in this paper have provided relatively more stable solutions. The use of the element with other ordinary displacement-based finite elements has also yielded very accurate solutions even when very coarse meshes relative to the size of the elliptic hole have been used.     

动力系统简介

本文对动力系统这一学科的历史、理论、应用以及与其他学科的联系作一简介.     

三种瓜环与4,4′-联吡啶及N,N′-二甲基4,4′-联吡啶盐酸盐相互作用的研究

以七元瓜环(Q[7])和新型椭圆型改性瓜环———对称四甲基取代六元瓜环(TM eQ[6])为主体,4,4′-联吡啶的盐酸盐(44)以及N,N′-二甲基4,4′-联吡啶的盐酸盐(dm44)为客体的主客体相互作用进行了考察.实验结果表明,Q[7]与客体44及dm44作用体系中,客体为了更有效地被主体Q[7]包结,在Q[7]内腔中呈倾斜状分布的几率最高.用核磁共振、循环伏安以及紫外吸收光谱对实验结果进行了印证和补充,验证了TM eQ[6]与客体44及dm44可发生较强的相互作用,形成一维的自组装超分子结构.核磁共振以及循环伏安方法的实验结果表明,没有观察到Q[6]与客体44及dm44的明显作用,而紫外吸收光谱方法证实,Q[6]与客体44确实存在一定的相互作用,比较主客体的结构特征,该作用体系也可能存在自组装的一维超分子结构等多种作用形式.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.