808nmInGaAsP／InGaP／GaAs激光器列阵

研制出３０个单元的ＩｎＧＡａＳｐ／ＩｎＧａＰ／ＧａＡｓ分别限制双异质结单量子阱激光器列阵,器件外微分量子效率达７８％,发向波长８０８ｎｍ,准连续输出的光功率达２７Ｗ。     

HETEROJUNCTION DIODES OF POROUS SILICON WITH SOLUBLE POLYANILINE*

Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) werefabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline (PAOABSA),Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with solublepolyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifyingcharacteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thicknessof the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0×10~4 at±3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measuredand discussed.     

RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell,were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×10~1～ 1 .0×10~5 for the rectifyingratio at 3V, n = 3 ～12 for the ideal factor,j_0 = 8.0×10~(-5)～5.6×10~(-2) mA/cm~2 for the reversed saturated currentdensity, and φ_b = 0.67～ 0.83 V for the barrier height, respectively. The best rectifying heterojunction diodemade between PANI and n-type PS with higher rectifying factor (γ= 1 .0×10~5 at 3V ), output current (>1500mA/cm~2 at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS beforeevaporating Al electrode.     

SYNTHESIS AND PROPERTIES OF ANILING ANILING AND 0-AMINOBENZENESULFONIC ACID COPOLYMER*

Poly(aniline- co-o-aminobenzenesulfonic acid) (PAOABSA) as a water soluble conducting polymerwas synthesized by chemical polymerization. The productivity and the room-temperature conductivity of thecopolymer were measured as a function of the reaction conditions, such as reaction temperature, the ratio ofoxidant to monomer and the degree of sulfonation defined as the ratio of sulfur to nitrogen atoms(S/N). Themain results obtained are summarized as follows : (1) lower reaction temperature (at about 0℃) is favorablefor the enhancement of the room-temperature conductivity of the copolymer; (2) higher content of oxidant isunfavorable for increasing the room-temperature conductivity of the copolymer; (3) both productivity androom-temperature conductivity of the copolymer decrease with increase of the degree of sulfonation whichwas always lower than 0.5 even an excess of o-aminobenzenesulfonic acid was added, probably because thereactivity ratio of aniline (γ=2.99± 0.05) is much higher than that of o-aminobenzenesulfonic acid (γ_2 = 0.06±0.02) estimated by using Fineman-Ross method and least square method.     

SYNTHESIS OF DIACETYLENE-CONTAINING COPOLYESTERS AND THEIR DFFECT ON ELECTRO-OPTICAL PROPERTIES OF LIQUID CRYSTALS*

Some diacetylene-containing copolyesters with different ratios of dipropargyl 1,10-decanate anddipropargyl terephthalate were synthesized. Properties of these copolymers were characterized by differentialscanning calorimetry and polarizing optical microscopy. The copolymer could be cross-linked easily by UVirradiation in a liquid crystal matrix without adding any photoinitiator. The preliminary studies showed thatthe diacetylene-containing polymer network can assist liquid crystal molecules to align with the externalelectric field, thus reducing the response time of display devices.     

LOW POTENTIAL ELECTROPOLYMERIZATION OF ANISOTROPIC CONDUCTIVE POLYTHIOPHENE FILMS AND FABRICATION OF ELECTRICAL DEVICES

The complexation of thiophene with a Lewis acid with moderate acidity as a solvent, such as BF_3-ethyl ether (BFEE) remarkedly lowered the electrochemical polymerization potential. The positively chargedmetal surface of electrode in the process of electrochemical deposition enhanced the coordination interactionbetween π-electrons of thiophene unit and the metal, which makes thiophene rings lie parallel to the surfaceof electrode, resulting in a highly ordered polymeric structure. Because of the large intra-chain transferintegrals, the transport of charge is believed to be principally along the conjugated chains, which is muchgreater than the inter-chain hopping. The specific electrical resistance across the polythiophene film thicknessis more than 10~4 times than that along the surface plane of the film. In this paper we review the recentdevelopment of polymerization technique by low potential electrochemical method performed in our lab andseveral electrical devices in which the compact polythiophene films, such as anionic and cationic sieves, andlaminate film junction of undoped polythiophene derivatives were used.     

交联剂的引入对碳负极材料性能的影响

研究了引入的交联剂二乙烯基苯对作为锂离子二次电池负极材料的聚合物裂解碳性能的影响.结果表明交联剂引入到聚丙烯腈中后,在热处理过程中有利于该聚合物的碳化,导致层间距d002减少及石墨微晶尺寸增加;交联剂的固定作用使碳材料的有序性得到了提高;同时微孔数目也得到了增加.这些因素的影响导致了聚合物裂解碳的可逆储锂容量随交联剂的量的增加而提高.对于别的加聚物如聚4乙烯吡啶而言,同样也使所得到的聚合物裂解碳的可逆储锂容量得到了提高.最大可逆容量可达600mAh·g-1.     

带Carathodory函数的积分微分方程周期边值问题

本文研究带Caratheodory函数的非线性Volterra型积分微分方程周期边值问题．对于下解α与上解β的两种情形：或,解的存在性和建立极解的单调迭代法均被讨论．     

Global W2,p (2<=p

This paper studies the initial-boundary value problem of GBBM equations u_t - Δu_t = div f(u) \qquad\qquad\qquad(a) u(x, 0) = u_0(x)\qquad\qquad\qquad(b) u |∂Ω = 0 \qquad\qquad\qquad(c) in arbitrary dimensions, Ω ⊂ R^n. Suppose that. f(s) ∈ C¹ and |f'(s)| ≤ C (1+|s|^ϒ), 0 ≤ ϒ ≤ \frac{2}{n-2} if n ≥ 3, 0 ≤ ϒ < ∞ if n = 2, u_0 (x) ∈ W^{2⋅p}(Ω) ∩ W^{1⋅p}_0(Ω) (2 ≤ p < ∞), then ∀T > 0 there exists a unique global W^{2⋅p} solution u ∈ W^{1,∞}(0, T; W{2⋅p}(Ω)∩ W^{1⋅p}_0(Ω)), so the known results are generalized and improved essentially.     

一类二层凸规划的分解法

研究了一类二层凸规划和与之相应的凸规划问题的等价性．并讨论了这类凸规划的对偶性和鞍点问题,最后给出了求解这类二层凸规划的一个分解法．