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41.
本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y2O3/BaCeO3的YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y2O3/BaCeO3的YBCO膜的临界电流密度达到5.0 MA/cm2 (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y2O3和BaCeO3可能在YBCO内部起到了 有效的钉扎磁通作用.
关键词:
钇钡铜氧薄膜
2O3和纳米BaCeO3')" href="#">纳米Y2O3和纳米BaCeO3
磁通钉扎
三氟乙酸盐-金属有机沉积 相似文献
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M. Q. Mehmood Hong Liu Kun Huang Shengtao Mei Aaron Danner Boris Luk'yanchuk Shuang Zhang Jinghua Teng Stefan A. Maier Cheng‐Wei Qiu 《Laser \u0026amp; Photonics Reviews》2015,9(6):674-681
This work presents analytical, numerical and experimental demonstrations of light diffracted through a logarithmic spiral (LS) nanoslit, which forms a type of switchable and focus‐tunable structure. Owing to a strong dependence on the incident photon spin, the proposed LS‐nanoslit converges incoming light of opposite handedness (to that of the LS‐nanoslit) into a confined subwavelength spot, while it shapes light with similar chirality into a donut‐like intensity profile. Benefitting from the varying width of the LS‐nanoslit, different incident wavelengths interfere constructively at different positions, i.e., the focal length shifts from 7.5 μm (at λ = 632.8 nm) to 10 μm (at λ = 488 nm), which opens up new opportunities for tuning and spatially separating broadband light at the micrometer scale.
44.
一种用于电子纸的电泳液的显示性能研究 总被引:1,自引:0,他引:1
用有机颜料汉沙黄(P.Y.3)、苏丹黑和合适的稳定剂为原料配制了一种性能稳定的电泳显示液.分析了此电泳显示液中颜料微粒的带电机理及其影响因素,研究了在改变电压方向时反射光谱与吸收光谱的变化及其原因,光谱分析结果表明体系中存在的各种吸附使显示效果受到局限,反射谱与吸收谱的变化在表征器件的显示特性时呈现出一致性,器件的反射光强和反射率在不同波长上有区域选择性,同时对比度也有区域选择性,这决定了在监测器件的响应时应选择的波长范围以及可利用的光源.兼顾灵敏性和测试信号强度的需求,选用峰值波长为470 nm的蓝光二极管为光源,电泳槽的厚度为0.2 mm,用荧光光谱仪监测相同周期不同幅值脉冲电压作用下颜料微粒在493 nm波长处的反射光强的变化,并由示波器记录并输出反射光强随驱动电压的变化,还结合相关理论讨论了驱动电压对器件的反射光强和对比度的影响. 相似文献
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Wang J Ma T Zhang Z Zhang X Jiang Y Zhang G Zhao G Zhao H Zhang P 《Ultrasonics sonochemistry》2007,14(2):246-252
The transition crystal TiO(2) sonocatalyst was prepared utilizing the method of ultrasonic irradiation in hydrogen peroxide solution. The sonocatalytic activity of the transition crystal TiO(2) powder was validated through the degradation of methyl orange in aqueous solution by ultrasonic irradiation. The results show that the sonocatalytic activity of the transition crystal TiO(2) powder is obviously higher than that of pure rutile and anatase TiO(2) powders as well as mixed rutile and anatase TiO(2) powders according to the proportion of corresponding transition crystal TiO(2) catalyst. The degradation ratio of methyl orange in the presence of the transition crystal TiO(2) catalyst surpasses 75% within 80 min ultrasonic irradiation, while the degradation ratios are 55.93%, 51.68% and 40.88%, respectively, for rutile, mixed and anatase TiO(2) powders. 相似文献
47.
We study the Fresnel diffraction of Gaussian beam truncated by one circular aperture, and give the general analytic expression of the Fresnel diffraction of truncated Gaussian beam denoted by Bessel functions. Then the characteristic of the axial diffraction fluctuation and the influence of the caliber of the circular aperture and the wave waist of Gaussian beam on the diffraction distributions are discussed, respectively. Through the numerical calculations, the characteristics of the transverse diffraction are presented and the relationship of the fluctuation of the transverse diffraction profile and the position of the axial point is shown. The physical origin of the fluctuation of Fresnel diffraction intensities of truncated Gaussian beam is expressed in terms of Fresnel half-zone theory. These phenomena and the conclusions are important for the measurement of the parameters of the beam and its applications. 相似文献
48.
We put forward a kind of tunable external cavity semiconductor laser with feedback on both chip facets. It outputs the single-frequency laser with high side-mode suppression ratio and the frequency could be step tuned. 相似文献
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C.Y. Liu S.F. Yoon J.H. Teng J.R. Dong S.J. Chua 《Applied Physics A: Materials Science & Processing》2008,91(3):435-439
GaInP/AlGaInP triple quantum well (TQW) lasers, grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine
(TBAs) and tertiarybutylphosphine (TBP), were fabricated with a pulsed anodic oxidation (PAO) process. The devices worked
at room temperature (RT) with the lowest threshold current density (Jth) of 1.5 kA/cm2 ever reported for GaInP/AlGaInP lasers grown using TBAs and TBP. Temperature dependent (35–250 K) electroluminescence (EL)
study of the GaInP/AlGaInP laser diode showed almost the same luminescence quenching behavior at a high temperature region
(120–250 K), independent of the injection current (100–150 mA). A model involving a nonradiative recombination mechanism was
presented to interpret the EL quenching behavior over the experimental temperature range. The nonradiative recombination centers
in the Al-containing barrier or cladding layer are believed to contribute to the loss of carriers via nonradiative recombination.
PACS 78.60.Fi; 71.20.Nr; 78.67.De; 81.15.Gh; 42.55.Px 相似文献