Multicaloric and coupled-caloric effects

The multicaloric effect refers to the thermal response of a solid material driven by simultaneous or sequential application of more than one type of external field.For practical applications,the multicaloric effect is a potentially interesting strategy to improve the efficiency of refrigeration devices.Here,the state of the art in multi-field driven multicaloric effect is reviewed.The phenomenology and fundamental thermodynamics of the multicaloric effect are well established.A number of theoretical and experimental research approaches are covered.At present,the theoretical understanding of the multicaloric effect is thorough.However,due to the limitation of the current experimental technology,the experimental approach is still in progress.All these researches indicated that the thermal response and effective reversibility of multiferroic materials can be improved through multicaloric cycles to overcome the inherent limitations of the physical mechanisms behind single-field-induced caloric effects.Finally,the viewpoint of further developments is presented.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.     

Ground state cooling of magnomechanical resonator in PT-symmetric cavity magnomechanical system at room temperature

We propose to realize the ground state cooling of magnomechanical resonator in a parity–time (PT)-symmetric cavity magnomechanical system composed of a loss ferromagnetic sphere and a gain microwave cavity. In the scheme, the magnomechanical resonator can be cooled close to its ground state via the magnomechanical interaction, and it is found that the cooling effect in PT-symmetric system is much higher than that in non-PT-symmetric system. Resorting to the magnetic force noise spectrum, we investigate the final mean phonon number with experimentally feasible parameters and find surprisingly that the ground state cooling of magnomechanical resonator can be directly achieved at room temperature. Furthermore, we also illustrate that the ground state cooling can be flexibly controlled via the external magnetic field.     

Multi-variable special polynomials using an operator ordering method

Using an operator ordering method for some commutative superposition operators, we introduce two new multi-variable special polynomials and their generating functions, and present some new operator identities and integral formulas involving the two special polynomials. Instead of calculating complicated partial differential, we use the special polynomials and their generating functions to concisely address the normalization, photocount distributions and Wigner distributions of several quantum states that can be realized physically, the results of which provide real convenience for further investigating the properties and applications of these states.     

高雷诺数下非混相Rayleigh-Taylor不稳定性的格子Boltzmann方法模拟

本文采用相场格子Boltzmann方法研究了竖直微通道内中等Atwoods数流体的单模Rayleigh-Taylor不稳定性问题,系统分析了雷诺数对相界面动力学行为以及扰动在各发展阶段演化规律的影响.数值结果表明高雷诺数条件下,不稳定性界面扰动的增长经历了四个不同的发展阶段,包括线性增长阶段、饱和速度阶段、重加速阶段及混沌混合阶段.在线性增长阶段,我们计算获得的气泡与尖钉振幅符合线性稳定性理论,并且线性增长率随着雷诺数的增加而增大.在第二个阶段,我们观察到气泡与尖钉将以恒定的速度增长,获得的尖钉饱和速度略高于Goncharov经典势能模型的解析解[Phys.Rev.Lett.200288134502],这归因于系统中产生了多个尺度的旋涡,而涡之间的相互作用促进了尖钉的增长.随着横向速度和纵向速度的差异扩大,气泡和尖钉界面演化诱导产生的Kelvin–Helmholtz不稳定性逐渐增强,从而流体混合区域出现许多不同层次的涡结构,加速了气泡与尖钉振幅的演化速度,并在演化后期阶段,导致界面发生多层次卷起、剧烈变形、混沌破裂等行为,最终形成了非常复杂的拓扑结构.此外,我们还统计了演化后期气泡与尖钉的无量纲加速度,发现气泡和尖钉的振幅在后期呈现二次增长规律,其增长率系数分别为0.045与0.233.而在低雷诺条件下,重流体在不稳定性后期以尖钉的形式向下运动而轻流体以气泡的形式向上升起.在整个演化过程中,界面变得足够光滑,气泡与尖钉在后期的演化速度接近于常数,未观察到后期的重加速与混沌混合阶段.     

铜铁镁三掺铌酸锂晶体的第一性原理研究

利用基于密度泛函理论的第一性原理,研究了Cu:Fe:Mg:LiNbO3晶体及对比组的电子结构和光学特性.研究显示,单掺铜或铁铌酸锂晶体的杂质能级分别由Cu 3d轨道或Fe 3d轨道贡献,禁带宽度分别为3.45和3.42 eV;铜、铁共掺铌酸锂晶体杂质能级由Cu和Fe的3d轨道共同贡献,禁带宽度为3.24 eV,吸收峰分别在3.01,2.53和1.36 eV处;Cu:Fe:Mg:LiNbO3晶体中Mg^2+浓度低于阈值或高于阈值(阈值约为6.0 mol%)的禁带宽度分别为2.89 eV或3.30 eV,吸收峰分别位于2.45 eV,1.89 eV或2.89 eV,2.59 eV,2.24 eV.Mg^2+浓度高于阈值,会使吸收边较低于阈值情况红移;并使得部分Fe^3+占Nb位,引起晶体场改变,从而改变吸收峰位置和强度.双光存储应用中可选取2.9 eV作为擦除光,2.5 eV作为读取和写入光,选取Mg^2+浓度达到阈值的三掺晶体在增加动态范围和灵敏度等参量以及优化再现图像的质量等方面更具优势.     

表面效应对铁<100>间隙型位错环的影响

在材料辐照损伤过程中,间隙型位错环的形成及动力学行为严重影响材料在辐照条件下的服役行为.在常用的以体心立方铁为基的合金材料中,1/2<111>和<100>是两种主要的位错环,其对辐照损伤的影响一直都是核材料领域研究的热点之一.在之前的研究中,人们对{111}面与单个1/2<111>位错环的相互作用进行了深入研究,发现表面对位错环性质确实有重要的影响.采用分子动力学方法,在原子尺度详细研究了另一个重要的表面铁{100}面对<100>间隙型位错环动力学过程的影响.模拟发现位错环伯格斯矢量与表面法线方向的关系、距表面的深度、位错环之间的相互作用以及温度等,都对位错环与表面的相互作用产生重要影响,其中,表面作用下的伯格斯矢量的演化以及<100>位错环在此过程中的一维运动首次被发现.基于这些模拟结果,就<100>位错环对表面辐照损伤结构的影响进行详细地研究,给出<100>位错环对表面凹凸结构的贡献,这些结果为理解辐照过程中材料表面的演化提供一种可能的解释.     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

地质样品中岩性自动分类X－射线荧光光谱分析研究

鉴于地质样品岩性变化大，容易引起对Ｘ－射线荧光分析准确度的影响，尤其是主、次量元素受影响更大，因此，作者提出了岩性自动分类，交互有效－基本参数法分析地质样品中主、次量元素，并与原有的经验系数和其它方法进行了比较．结果表明本方法的准确度更好些，对岩性的变化具有更好的适应能力