ABOUT HYBRID BIDIRECTIONAL ASSOCIATIVE MEMORY NEURAL NETWORKS WITH DISCRETE DELAYS

In this paper, hybrid bidirectional associative memory neural networks with discrete delays is considered. By ingeniously importing real parameters di > 0(i = 1,2,···,n) which can be adjusted, we establish some new sufficient conditions for the dynamical characteristics of hybrid bidirectional associative memory neural networks with discrete delays by the method of variation of parameters and some analysis techniques. Our results generalize and improve the related results in [10,11]. Our work is significant...     

3-(3''''-羟基丁基)异苯并呋喃-1(3H)-酮的合成

由邻苯二甲酸酐为原料 ,经中间体 3 羟基苯酞 (3 ) ,再经溴丙烯及锡存在下 3的烯丙基化、硼氢化氧化、铬酐氧化、二甲基锌甲基化 ,共 6步反应合成了 3 (3’ 羟基丁基 )异苯并呋喃 1(3H) 酮。     

THE UNIQUENESS OF LIMIT CYCLE AND THE STRUCTURE OF CRITICAL POINT AT INFINITY FOR A CLASS OF CUBIC SYSTEM

A class of cubic system, which is an accompany system of a quadratic differential one, is studied. It is proved that the system has at most one limit cycle, and the critical point at infinity is a higher order one. The structure and algebraic character of the critical point at infinity are obtained.     

强外电场作用下二甲基硅酮的分子结构和激发态

采用密度泛函(DFT)方法B3P86在6 311++G(d,p)基组水平上优化得到了分子轴方向不同电偶极 场(-0.04～0.04a.u.)作用下,二甲基硅酮的基态电子状态、几何结构、电偶极矩和分子总能量.在优化构型下 用同样的基组采用杂化CIS DFT方法(CIS B3P86)研究了同样外电场条件下对二甲基硅酮的激发能和振子强度 的影响.计算结果表明,分子几何构型与电场大小和方向呈现强烈的依赖,正向电场下基态偶极矩随电场强度线 性增加,分子总能量降低,当反向电场大于0.03a.u.时,偶极距方向改变,总能量增加;激发能随电场增加急剧减 小,且对电场方向的依赖呈现出不对称性,满足Grozema关系.电场对振子强度的影响比较复杂,但仍满足跃迁选 择定则.     

A π‐stacked and conjugated hybrid based on poly(N‐vinylcarbazole) postfunctionalized with terfluorene for stable deep‐blue hole‐transporting materials

The combination of π‐stacked with π‐conjugated building blocks offers an essential strategy to construct multifunctional organic semiconductors (MOSs) with the unique optoelectrical properties. Covalent hybrids can efficiently avoid the intrinsic phase‐separation defects in corresponding blend system. In this contribution, poly(vinylcarbazole) tethered with terfluorene, PVK‐TF, as a double‐channeled π‐stacked and π‐conjugated hybrid (SCH), has been constructed via Friedal‐Crafts click postmodification (FCCP). The chemical structure and optoelectrical property were determined by GPC, UV–vis, PL, TGA, DSC, and CV. Its PL spectra in the annealing thin film at N₂ atmosphere without low‐energy emission bands centered at the 530 nm indicates that no π‐stacks between carbazole and TF or among TFs dominate the whole condensed phase, which is in agreement with the intrachain T‐shaped π‐pitched motifs in molecular modeling simulation due to steric hindrance effect in complicated diarylfluorenes (CDAFs). A supporting prototype stable deep‐blue PLED was successfully obtained with an Internationale de l'Eclairage (CIE) coordinates of (0.20, 0.10) and a width at half maximum (FWHM) of about 60 nm at high current density of 100 mA/cm² (35 V). Deep‐blue PVK‐TF is a promising MOS for hole‐transporting and host materials. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 5221–5229, 2009     

Stability of a priority queueing system with customer transfers

This paper is concerned with the stability of a preemptive priority queueing system with customer transfers. Conditions for the queueing system to be stable/unstable are found. An interesting result is that the stability/instability conditions are independent of the service rates of lower priority customers and the transfer rates.     

High-power passive mode-locking of a diode pumped Yb:GdVO4 laser

Passive mode-locking of a diode pumped Yb-doped GdVO₄ crystal laser was demonstrated for the first time to our knowledge. The laser was mode-locked at the wavelength of 1019.1 nm and had an average output power of 1.01 W. The mode-locked pulse duration was 3.1 ps. The laser was end-pumped by a high-power fiber pigtailed laser diode bar and the mode-locking was enabled by a semiconductor saturable absorber mirror (SESAM).     

超导芯截面形状对Bi-2223/Ag带Jc的影响

磁光图像显示Ｂｉ－２２２３／Ａｇ带材中单根超导芯的宽面两侧边缘分布有较大的超导电流密度，Ｂｉ－２２２３单根超导芯的横截面是纺锤形的，单位宽度上的横截面面积之比与电流密度在横截面上不同部分的分布之比相当，高的电流密度在单根超导芯两则的分布可能是由单芯横截面的形状引起的。