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31.
The infinitely many symmetries with arbitrary functions of timet for the potential modified Kadomtsev-Petviashvilli equation are obtained by using a simple direct method. These symmetries constitute a generalization of the well-knownW
algebra. 相似文献
32.
烷基苯的热力学性质与分子拓扑指数的关系研究 总被引:6,自引:0,他引:6
倪才华 《原子与分子物理学报》1995,12(2):213-218
此文分析了烷基苯的结构特点,以分子的拓扑指数为结构参数,研究了苯、烷基系列的燃烧热,生成自由能等八种热力学性质与结构参数的关系,提出计算热力学性质的一个通用关系式Y=a·N+b·R+c·NR+d,用计算机处理,得到一系列经验公式,计算结果表明:烷基苯系列的热力学性质与拓扑指数相关性能很好。 相似文献
33.
An analytical formula for the average intensity of cosh-Gaussian (ChG) beams diffracted by an aperture in turbulent atmosphere
is derived and some limiting cases are discussed. By using the average intensity formula, some numerical simulation comparisons
are made and some special cases are studied, especially the influences of the ChG beam parameter (Ω0), the propagation distance, the aperture and its size on the average normalized intensity distribution. It is determined
that the evolution properties of the average normalized intensity profile in turbulent atmosphere with aperture are different
not only from those of free space with aperture but also from those in turbulent atmosphere without aperture.
PACS 42.68.Bz; 42.79.Ag; 42.25.Fx 相似文献
34.
35.
For B2 NiAl and NiTi intermetallic compounds, the ideal stress–strain image is lack from the perspective of elastic constants. We use first-principles calculation to investigate the ideal strength and elastic behavior under the tensile and shear loads. The relation between the ideal strength and elastic constants is found. The uniaxial tension of NiAl and NiTi along <001> crystal direction leads to the change from tetragonal path to orthogonal path, which is driven by the vanishing of the shear constant C(66). The shear failure under {110}{111} shear deformation occurring in process of tension may result in a small ideal tensile strength(~ 2 GPa) for NiTi. The unlikeness in the ideal strength of Ni Al and Ni Ti alloys is discussed based on the charge density difference. 相似文献
36.
W. -X. Ni C. -X. Du K. B. Joelsson G. Pozina G. V. Hansson 《Journal of luminescence》1998,80(1-4):309-314
Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σex, and effective Auger coefficient, CA, have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (4 μs), and the hot carrier effects (200 ns) have been identified. 相似文献
37.
考虑了在非平衡凝固条件下球晶生长过程中界面动力学系数随界面温度的变化,利用渐近分析方法求出了在过冷熔体中球晶生长温度场和界面的近似解析解,研究了非线性界面动力学过冷对于过冷熔体中球晶界面形态和生长速度的影响.研究表明,界面动力学系数越大,球晶的生长速度越快; 反之,表明界面动力学系数越小,球晶的生长速度越慢.与忽略界面动力学的情形比较,在球晶生长过程中依赖于界面温度变化的界面动力学显著地减缓了晶体生长的速度.
关键词:
球晶
界面形态
渐近分析 相似文献
38.
Na_2Ge_2Se_5是一种优异的红外非线性晶体材料.采用基于第一性原理的密度泛函理论赝势平面波方法对Na_2Ge_2Se_5进行结构优化,并以此为基础计算研究了Na_2Ge_2Se_5的电子结构和光学性质.结果表明:Na2Ge2Se5是宽禁带间接带隙半导体,价带至导带的电子跃迁主要来自于Ge和Se的48,4p态;Na对光学性质的贡献较小,Ge和Se之间的相互耦合作用决定了Na_2Ge_2Se_5的光学性质;该晶体在紫外区有强烈的反射和吸收,静态折射率为2.133,双折射率值适中,为0.145.理论计算结果表明,Na_2Ge_2Se_5是一种性能优良的红外非线性光学晶体材料. 相似文献
39.
We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO4 crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO4 crystal. The remaining was used to pump the Nd:YLiF4 (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB3O6 (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm. 相似文献
40.
Miniussi E Pozzo M Baraldi A Vesselli E Zhan RR Comelli G Menteş TO Niño MA Locatelli A Lizzit S Alfè D 《Physical review letters》2011,106(21):216101
We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 ?, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moiré cell, though it requires the presence of diffusing graphene layer vacancies. 相似文献