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31.
32.
Here, we report a new strategy for rapid synthesis of branched peptide by side-chain hydrazide ligation at Asn. The hydrazide was converted to thioester at Asn side chain by NaNO2 and thiol reagent, and sequential ligation with an N-terminus Cys-peptide efficiently afforded the branched peptide. A branched cyclic peptide was successfully synthesized by side-chain ligation with a two-Cys-peptide and formation of a disulfide bond. This approach provides a new way for expeditious synthesis of branched peptides and facilitates the design of neopeptides as functional bio-mimics. 相似文献
33.
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35.
矩阵方程A^TXB=C的正定和半正定解 总被引:5,自引:1,他引:4
何楚宁 《高校应用数学学报(A辑)》1997,(4):475-480
给出了矩阵方程A^TXB=C在正定和半正定矩阵类中有解的充要条件及解的一般表达式。 相似文献
36.
37.
针对VO2薄膜在微测辐射热计上的应用,采用射频反应溅射法,在室温下制备氧化钒薄膜;研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压,先获得成分接近VO2的非晶化薄膜,再在400℃空气中氧化退火,便可制得高电阻温度系数,低电阻率的VO2薄膜,电阻温度系数约为-4%/℃,薄膜方块电阻为R□为100—300kΩ;薄膜在室温下沉积,400℃下退火的制备方法与微机电加工(micro electromechanic
关键词:
二氧化钒
电阻温度系数
氧分压
射频反应溅射法 相似文献
38.
High index of refraction via quantum interference in a three-level system of Er^3+-doped yttrium aluminium garnet crystal 下载免费PDF全文
A simple three-level system is proposed to produce high index of refraction with zero absorption in an Er^3+-doped yttrium aluminium garnet (YAG) crystal, which is achieved for a probe field between the excited state 4I13/2 and ground state 4I15/2 by adjusting a strong coherent driving field between the upper excited state 4I11/2 and 4I15/2. It is found that the changes of the frequency of the coherent driving field and the concentration of Er^3+ ions in the YAG crystal can maximize the index of refraction accompanied by vanishing absorption. This result could be useful for the dispersion compensation in fibre communication, laser particle acceleration, high precision magnetometry and so on. 相似文献
39.
Jian Shen Huizhong Zeng Zhihong Wang Shengbo Lu Huidong Huang Jingsong Liu 《Applied Surface Science》2006,252(22):8018-8021
Polycrystalline Pb(Zr0.55Ti0.45)O3 thin film was deposited on Pt/Ti/SiO2/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon. 相似文献
40.
This paper reports that the growth of RuOx(110) thin layer growth on Ru(0001)
has been investigated by means of scanning tunnelling microscope (STM). The STM
images showed a domain structure with three rotational domains of RuOx(110)
rotated by an angle of 120℃.
The as-grown RuOx(110) thin layer is expanded from the bulk-truncated
RuOx(110) due to the large mismatch between RuOx(110) and the
Ru(0001) substrate. The results also indicate that growth of RuOx(110)
thin layer on the Ru(0001) substrate by oxidation tends first to formation
of the Ru-O (oxygen) chains in the [001] direction of RuOx(110). 相似文献