Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

一类新的表面活性剂——长链烷基三苯基鏻——Ⅵ.稳态荧光猝灭法测定十二烷基三苯基溴化鏻胶束的平均簇集数

研究了十二烷基三苯基溴化鏻(C_(12)PBr)胶束中N,N-二甲基苯胺(DMA)和二苯甲酮(DPK)对芘的荧光猝灭,发现DMA的猝灭行为不符合Stern-Volmer动态猝灭和Turro静态猝灭模型;DPK的猝灭行为不符合Stern-Volmer猝灭模型,但遵从Turro静态猝灭模型。根据DPK的静态猝灭性质测得C_(12)PBr胶束的平均簇集数为15士2,并相应地得到C_(12)PBr的临界胶束浓度为(1.77±0.09)×10~(-3)mol/L,后者与文献值一致。     

表面粗糙度测量的磁光位相调制和锁相干涉

提出了一种表面粗糙度测量的新方法，该方法采用了微分偏振干涉的原理，利用由法拉第磁光调制器所组成的调制系统对偏振干涉光路的位相进行调制，利用锁相干涉原理对位相进行探测，该方法可实现无参考面快速非接触测量，在普通实验条件下，也可保持良好的稳定恶性循环 ，实验装置即可给出表面的轮廓又可给出其它统计数据，其横向分辨率为１．２μｍ纵向为２ｎｍ。     

双轴晶体Nd^3＋：KGd（WO4）2的非偏振吸收光谱研究

报道了用三个方向相互垂直的非偏振吸收光谱测量计算Ｊｕｄｄ－Ｏｆｅｌｔ参数从而算出双轴晶体Ｎｄ３＋ＫＧｄ（ＷＯ４）２的荧光寿命、荧光分支比和发射截面的方法。得到的荧光寿命为１１９μｓ，平均发射截面为２．３×１０－１９ｃｍ２。     

Nd：YAG激光器中的自锁模

本文报道在Nd:YAG激光器中首次获得的自锁模脉冲序列.自锁模是由于Nd:YAG棒中的自相位调制引起的.在主被动对撞锁模运转情况下,自锁模对脉冲波形有较大的影响.     

用13CNMR研究聚甲基丙烯酸锡酯的立构序列分布

本文测定了自由基型溶液聚合的聚甲基丙烯酸三甲基锡酯(PTMTM),聚甲基丙烯酸三乙基锡酯(PTETM)和聚甲基丙烯酸三丁基锡酯(PTBTM)的¹³C-NMR谱,对其C-2谱扩展分峰,计算立构序列,从定量数据表明,聚合物样品的空间立构富于或稍富于间规立构,随取代基的体积增大而趋于无规分布,作者认为受空间位阻效应和分子内或分子间形成配位键的影响。     

Self-organized ZnAl2O4 nanostructures grown on -sapphire

Self-organized ZnAl₂O₄ nanostructures with the appearance (in SEM) of high aspect ratio horizontal nanowires are grown on uncatalysed c-sapphire by vapour phase transport. The nanostructures grow as three equivalent crystallographic variants on c-sapphire. Raman and cathodoluminescence spectroscopy confirm that the nanostructures are not ZnO and TEM shows that they are the cubic spinel, zinc aluminate, ZnAl₂O₄, formed by the reaction of Zn and O with the sapphire substrate.     

CONVERGENCE OF AN ITERATION METHOD WITHOUT DERIVATIVE

In this paper, we give a convergence theorem and error estimates for an iteration method under new Kantorovitch-Ostrowski type condition using the information of higher derivatives at initial points. Compared with the corresponding study in [3],the convergence determination is established under one global condition, instead of two , on the function.     

Some Oscillatory Singular Integrals on Herz-type Spaces (Ⅱ)

In this paper, the authors prove that some oscillatory singular integral operators of non-convolution type with non-polynomial phases are bounded from the Herz-type Hardy spaces to the Herz spaces and from the Hardy spaces associated with the Beurling algebras to the Beurling algebras in higher dimensions, even though it is well-known that these operators are not bounded from the Hardy space H1(Rn) into the Lebesgue spaceL1(Rn).     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.