不同入射角度下强流脉冲电子束能量沉积剖面和束流传输系数模拟计算

 强流脉冲电子束在材料中的能量沉积剖面、能量沉积系数和束流传输系数受其入射角的影响很大，理论计算了0.5~2.0MeV的电子束以不同的入射角在Al材料中的能量沉积剖面和能量沉积系数，并且还计算了0.4~1.4MeV电子束以不同入射角穿透不同厚度C靶的束流传输系数。计算结果表明，随着入射角的增大，靶材表面层单位质量中沉积的能量增大，电子在靶材料中穿透深度减小，能量沉积系数减小，相应的束流传输系数也减小；能量为0.5~2.0MeV的电子束当入射角在60°~70°时在材料表面层单位质量中沉积的能量较大。     

Research on exponential regularization approach for nonnegative Tucker3 decomposition

Methods of nonnegative tensor factorization (NTF), such as NTF1, NTF2, etc., are extension of nonnegative matrix factorization (NMF) for multi-way data analysis. As an existing NTF method, nonnegative Tucker3 decomposition (NTD) is researched for three-way decomposition in this paper. Firstly, an approach utilizing matrix exponentials built on Tikhonov-type regularization to enforce sparseness is proposed to extract image features instead of exclusively using Tucker tensor decomposition. Meanwhile, updating algorithms, derived from updating rules of NMF, are allowed to efficiently implement updating of mode matrices and core tensors alternatively for accuracy. Then, experimental cases of alternating least squares (ALS) and conjugate nonnegative constraints, called nonnegative alternating least squares (NALS), are studied to remedy data overfitting in computing procedures. Lastly, the proposed method exhibits more advantageous results than other algorithms of Tucker3 for feature extraction, thanks to computer simulations performed in the context of data analysis.     

里德伯原子向超冷等离子体的自发转化

在铯原子MOT中,利用三光子激发冷原子获得超冷里德伯原子,改变里德伯原子间的相互作用时间,获得超冷等离子体的信号.研究了里德伯原子向超冷等离子体的自发转化过程和里德伯原子的初始电离机理. 关键词： 里德伯原子 相互作用 等离子体 电离机理     

EAST高时空分辨极向弯晶谱仪系统的升级及初步实验结果

为了拓宽等离子体参数测量范围,对EAST极向弯晶谱仪(PXCS)进行了升级改造。配合高通量大面积水冷固体探测器,提高了极向弯晶谱仪系统的光子计数率、时间分辨率、空间探测范围以及长时间运行稳定性,并在EAST装置上成功运行。实验结果表明,升级后的谱仪获得了高信噪比的类氦氩离子的母线及其一系列伴线谱,通过光谱拟合分析给出了等离子体温度时间演化及其剖面信息,测量结果与切向弯晶谱仪的数据一致,验证了极向弯晶谱仪的升级结果和数据测量的可靠性,并且在EAST长脉冲实验运行也能够稳定地提供全时间的参数分布。     

二元混合制冷剂CO2/R600的气液相平衡研究

采用PR状态方程及其混合法则对不同配比的二元混合制冷剂CO2/R600的气液相平衡进行了计算,将计算结果与相关文献数据进行了比对。结果表明,该文的计算结果与文献数据吻合较好,推算方法可用于CO2/R600混合制冷剂的基本热物性预测。     

超长定向含铁多壁碳纳米管阵列的制备

采用无模板化学气相沉积法,以二茂铁为催化剂,二甲苯为碳源,利用单温炉加热装置制备了定向碳纳米管阵列。运用扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线衍射仪等对定向碳纳米管阵列的形貌、成分和物相进行细致的分析和表征。结果表明:制得的碳纳米管阵列具有良好的定向性和多壁管状结构,并且石墨化程度高;碳纳米管中除碳元素外,管中包含有少量以纳米颗粒和纳米线形式存在的铁及其化合物,主要成分是铁和碳化铁。结合碳纳米管的制备和透射电子显微镜分析表征结果,认为超长碳纳米管阵列的生长模式为底部生长方式,即经历催化剂分解、催化、成核、长大、中毒、凝聚成粒和连接成线的循环过程,正是由于碳源和催化剂的连续供应促成了碳纳米管阵列的快速定向生长。     

A Quantum Watermark Protocol

Quantum watermarking is the technique which embeds the invisible quantum signal such as the owner’s identification into quantum multimedia data (such as audio, video and image) for copyright protection. In this paper, a watermark strategy for quantum images is proposed based on flexible representation for quantum images (FRQI). Compared with the former strategy, which can only be used to verify the identity of the true owner of a carrier image, the proposed method can be used to find out who is the real owner, and our strategy’s capacity reaches the largest. It is impossible for anyone except the copyrighter to clear off or extract the watermark images.     

A Quantum Watermarking Protocol Based on Bell Dual Basis

This paper presents a Bell-dual-basis-based quantum watermarking protocol composed of three major algorithms: watermark embedding and extracting and the intercepting test. The first two are completed by using the entanglement swapping property of Bell dual basis and the test is accomplished through IBF protocol to guarantee its bottom security. The watermarking protocol is mainly designed for the protection of digital copyright in the existence of classical information. This design finds that the quality of digital contents is not damaged with its zero-watermark attributes when embedding watermarks.     

一种测量次级中子能谱的新方法

采用双飞行时间法创建了一台非常规快中子飞行时间谱仪，排除了用D（d,n)^3He中子源测量8－13MeV能区次级中子双微分截面时源中破裂中子群对次级中子能谱测量的干扰，结合常规快中子飞行时间谱仪的测量，实现了用D（d,n)^3He中子源开展8－13MeV中子能区次级中子双微分截面的测量。     

Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces

We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.