Influence of the electron density profile on surface plasmons: Retardation effects

Hydrodynamics effects when used in conjunction with a diffuse surface are found to result in qualitatively new surface plasmon behavior in the optical region ($\text{q≈}\text{ω}\text{c}$).     

Stationarity and invertibility of simple bilinear models

Necessary and sufficient conditions for strict stationarity and invertibility are found for one-parameter bilinear models. These conditions involve the expectations of the logarithms of the absolute values of the input and output sequences.     

Microscopic calculation of the fermi liquid interaction constants for electrons in the surface inversion layer of a semiconductor

The leading Fourier coefficients of both the spin dependent and spin independent Landau interaction function of a quasi-two-dimensional electron gas are evaluated. Three different schemes for calculating the interaction function are studied for both a pure two-dimensional Coulomb interaction and an effective electron-electron interaction appropriate to the actual metal-insulator-semiconductor structure.     

Boundary value problems in generalized biaxially symmetric potential theory

Interior boundary value problems are solved for the operator of generalized biaxially symmetric potential theory. The boundary conditions consist of Dirichlet data on the nonsingular part of the boundary and Dirichlet data or growth restrictions on the singular hyperplanes, depending on the values of parameters of the operator. Continuation of solutions beyond the singular hyperplanes is considered, yielding an improvement of a result of Huber. Potential theoretic methods are used for the investigation.     

Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon

The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V_g, for different values of the temperature T, applied magnetic field strength H and substrate bias V_s. By analyzing the amplitude of the oscillations at fixed V_g and V_g as a function of T and H, the dependence of the cyclotron effective mass m¹ and the Dingle temperature T_D on V_g and V_s can be obtained. The dependence of m¹ on V_g for different values of V_s is compared with the prediction of theory.