Risk-neutral valuation with infinitely many trading dates

The first Fundamental Theorem of Asset Pricing establishes the equivalence between the absence of arbitrage in financial markets and the existence of Equivalent Martingale Measures, if appropriate conditions hold. Since the theorem may fail when dealing with infinitely many trading dates, this paper draws on the A.A. Lyapunov Theorem in order to retrieve the equivalence for complete markets such that the Sharpe Ratio is adequately bounded.     

Synthesis and polymerization of o-hexylaniline: Characterization of the corresponding polyaniline

In the field of research on soluble conducting polymers, the poly(o-alkylanilines) are very interesting because we can expect them to give more soluble polymers and new properties. Like poly(o-propylaniline) (POP), which is more soluble than polyaniline (PANi), poly(o-hexylaniline) (POH) appears to be more soluble in organic solvents than POP because of the longer alkyl groups in the 2-position. The higher solubility confers better processability on this new polymer, and because of this solubility, an NMR study in solution became possible.The nitration of hexylbenzene and the reduction of the resulting product to o-hexylaniline were performed according to the literature. The chemical polymerization was easy and it is possible to produce this polymer in large quantities.The polymerization carried out in anhydrous NH₄F, 2.35 HF medium and in 5 M perchloric acid gave a polymer with almost quantitative yield. The electrochemical behaviour of POH displayed faster electron transfers than PANi in organic solvents, depending on the acido-basicity level of the aqueous solutions. Unlike PANi, fractal growth was not observed.     

Path properties of l_p-valued Gaussian random fields

General limit theorems are established for l~p-valued Gaussian random fields indexed by a multidimensional parameter,which contain both almost sure moduli of continuity and limits of large increments for the l~p-valued Gaussian random fields under(?)explicit conditions.     

Micellar effect in hydroformylation of high olefin catalysed by water-soluble rhodium complexes associated with sulfonated diphosphines

High linear alkenes (1-octene and 1-decene) have been hydroformylated using water-soluble rhodium complexes associated with sulfonated diphosphines in the presence of ionic surfactants or methanol. In all cases, the hydroformylation activities were higher than in experiments without additives. The selectivity in aldehydes was higher when we used cetyltrimethylammonium hydrogensulfate (CTAHSO₄) as the surfactant or methanol as the co-solvent.     

On the approximation of convex functions by Bernstein-type operators

As a consequence of Jensen's inequality, centered operators of probabilistic type (also called Bernstein-type operators) approximate convex functions from above. Starting from this fact, we consider several pairs of classical operators and determine, in each case, which one is better to approximate convex functions. In almost all the discussed examples, the conclusion follows from a simple argument concerning composition of operators. However, when comparing Szász-Mirakyan operators with Bernstein operators over the positive semi-axis, the result is derived from the convex ordering of the involved probability distributions. Analogous results for non-centered operators are also considered.     

Generators of some Ramanujan formulas

In this paper we prove some Ramanujan type formulas for 1/π but without using the theory of modular forms. Instead we use the WZ—method created by H. Wilf and D. Zeilberger and find some hypergeometric functions in two variables which are second components of WZ—pairs than can be certified using Zeilberger's EKHAD package. These certificates have an additional property which allows us to get generalized Ramanujan's type series which are routinely proven by computer. We call these second hypergeometric components of the WZ—pairs generators. Finding generators seems a hard task but using a kind of experimental research (explained below), we have succeeded in finding some of them. Unfortunately we have not found yet generators for the most impressive Ramanujan's formulas. We also prove some interesting binomial sums for the constant 1/π². Finally we rewrite many of the obtained series using pochhammer symbols and study the rate of convergence. 2000 Mathematics Subject Classification Primary—33C20     

Lower bounds for transition probabilities on graphs

The paper presents two results. The first one provides separate conditions for the upper and lower estimates of the distribution of the time of exit from balls of a random walk on a weighted graph. The main result of the paper is that the lower estimate follows from the elliptic Harnack inequality. The second result is an off-diagonal lower bound for the transition probability of the random walk.     

Relation de Rankine Hugoniot faible pour les lois de conservation avec contraintes primitives convexes

We describe a Weak Rankine Hugoniot relation for constrained discontinuous solutions of conservation laws. The constraint is convex in the primitive variable. Various examples show the potential interest of this approach. To cite this article: B. Després, C. R. Acad. Sci. Paris, Ser. I 342 (2006).     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).