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The interference fragmentation function translates the fragmentation of a quark with a transverse projection of the spin into an azimuthal asymmetry of two final-state hadrons. In e(+)e(-) annihilation the product of two interference fragmentation functions is measured. We report nonzero asymmetries for pairs of charge-ordered π(+)π(-) pairs, which indicate a significant interference fragmentation function in this channel. The results are obtained from a 672 fb(-1) data sample that contains 711 × 10(6) π(+)π(-) pairs and was collected at and near the Υ(4S) resonance, with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider.  相似文献   
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Spherical SrTiO3:Pr3+,Al3+ phosphor with high crystallinity and uniform particle size distribution was formed from the glycolate precursor. The glycolate precursor was obtained by heating the mixed solution of metallic nitrates and titanium oxychloride in ethylene glycol up to 200 °C. The thermal decomposition of the glycolate precursor proceeded through three major stages, i.e., (i) evolution of glycols (∼200 °C), (ii) decomposition of glycolate precursor, and (iii) decomposition of strontium carbonate and crystallization of SrTiO3:Pr3+,Al3+ phosphor.SrTiO3:Pr3+,Al3+ phosphor exhibited a strong red emission, peaking at about 617 nm. SrTiO3:Pr3+,Al3+ phosphor obtained from the glycolate complex has higher luminescent properties than the conventional solid state reaction and the Pechini method in terms of photoluminescence (PL) and cathodoluminescence (CL). High crystallinity, low residual carbon content and small grain size with uniform shape would enhance the luminescence intensity of phosphor by the glycolate method due to high surface area per unit volume and low organic content compared with the Pechini method. Also, Al3+ ion is more effective than Ga3+ ion to enhance PL intensity of SrTiO3:Pr3+,Al3+ phosphor because of smaller Al3+ ion radius. Therefore, the glycolate method has been demonstrated to be a convenient and unique process for the production of muticomponent oxide with smaller grain size and higher crystallinity compared with the conventional mixed oxide reaction and the polymer precursor method.  相似文献   
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Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.  相似文献   
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A high temperature magnetic resonance compatible furnace for real time in situ monitoring of materials, processes, and chemical reactions with magnetic resonance imaging and spectroscopy is described. Design issues are analyzed. Example applications are demonstrated with a time sequence of proton images of the binder burnout in a porous green ceramic cylinder containing polyethylene glycol binder at 200 degrees C, and 7Li images of the molten salt LiCl at 700 degrees C.  相似文献   
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Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.  相似文献   
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Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 109 to 1.9 × 109 cm−2 by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.  相似文献   
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