Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N⁺-InP/n⁰-In_0.53Ga_0.47As/p⁺-In_0.53Ga_0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS? and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS? from SILVACO® international. The photodetector exhibits a high quantum efficiency ～90%, responsivity ～1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ～5 × 10⁹ cm Hz^1/2 W^?1at wavelength 1.55–1.65 μm, dark current of the order of 10^?11 A at reverse bias of 1.5 V and 10^?13–10^?12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10^?14 W.     

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

In order to conduct electrical studies on organic thin film transistors, top-contact devices are fabricated by growing polycrystalline films of freshly synthesized pentacene over Si/SiO2 substrates with two different channel widths under identical conditions. Reasonable field effect mobilities in order of 10^-2-10^-3 cm^2V^-1s^-1 are obtained in these devices. An elaborative electrical characterization of all the devices is undertaken to study the variance in output saturation current, field effect mobility, and leakage current with aging under ambient conditions. As compared to the devices with longer channel width, the devices with shorter channel width exhibit better electrical performance initially. However, the former devices sustain the moderate performance much longer than the latter ones.     

Electrostatic analysis for designing of efficient discharge cell structures in AC plasma displays

The high luminous efficacy of plasma display demands high luminance at reduced discharge power. The discharge power can be reduced by several steps, one of them being reduction of gas breakdown voltage. In this paper, improved discharge cell structures are introduced that favor reduction of the gas breakdown voltage. The simulated electric field profiles for these structures indicate the low voltage requirement with increased electric field concentration in the discharge gap. The experimental measurements of breakdown voltage and discharge delay time in the test panels also support the simulation results. The important features of these discharge cell structures are discussed.     

Detection of biological contamination protozoa in drinking water using surface plasmon resonance-based technique

Optical Review - Water is one of the fundamental needs for human life on earth. Different kinds of contaminants that exist in the drinking water may cause serious health issues, affect body organs,...     

Emerging Strategies in Stimuli-Responsive Silk Architectures

The utilization of implantable devices beseeches highly invasive surgeries considering the adversaries in the insertion of large, impliable devices through the body channels, which necessitate the development of implantable devices using biocompatible shape memory polymers. Silk displays prodigious heterogeneity in its genetic structure and physical properties in accordance with the spinning and storage process, where proteins undergo folding and unfolding. The stimuli-responsive nature of silk can be explained with the help of the structural morphology and composition of the material, where the hydrogen bonds in β-sheet domains and amorphous region act as switch points and net points, respectively. This review provides a primary attempt to enswathe all the literature available to date on the stimuli-responsive nature of silk and silk-based materials as a natural and biodegradable alternative for commercially used synthetic shape memory materials taking their elastomeric nature and reduction in glass transition temperature into account. Further constitutive model using the continuum approach has been utilized to explain the anisotropic elasticity damping effect and plastic deformation based on the α-helix chains, β-sheets, and β-spiral structures. The practicability to develop biomedical devices such as patient-specific-injectable scaffolds, drug carriers, and artificial muscles has been encompassed in this article.