Synthesis,characterization and role of zero-valent iron nanoparticle in removal of hexavalent chromium from chromium-spiked soil

Chromium is an important industrial metal used in various products/processes. Remediation of Cr contaminated sites present both technological and economic challenges, as conventional methods are often too expensive and difficult to operate. In the present investigation, Zero-valent iron (Fe⁰) nanoparticles were synthesized, characterized, and were tested for removal of Cr(VI) from the soil spiked with Cr(VI). Fe⁰ nanoparticles were synthesized by the reduction of ferric chloride with sodium borohydride and were characterized by UV–Vis (Ultra violet–Visible) and FTIR (Fourier transform infrared) spectroscopy. The UV–Vis spectrum of Fe⁰ nanoparticles suspended in 0.8% Carboxymethyl cellulose showed its absorption maxima at 235 nm. The presence of one band at 3,421 cm⁻¹ ascribed to OH stretching vibration and the second at 1,641 cm⁻¹ to OH bending vibration of surface-adsorbed water indicates the formation of ferrioxyhydroxide (FeOOH) layer on Fe⁰ nanoparticles. The mean crystalline dimension of Fe⁰ nanoparticles calculated by XRD (X-ray diffraction) using Scherer equation was 15.9 nm. Average size of Fe⁰ nanoparticles calculated from TEM (Transmission electron microscopy) images was found around 26 nm. Dynamic Light Scattering (DLS) also showed approximately the same size. Batch experiments were performed using various concentration of Fe⁰ nanoparticles for reduction of soil spiked with 100 mg kg⁻¹ Cr(VI). The reduction potential of Fe⁰ nanoparticles at a concentration of 0.27 g L⁻¹ was found to be 100% in 3 h. Reaction kinetics revealed a pseudo-first order kinetics. Factors like pH, contact time, stabilizer, and humic acid facilitates the reduction of Cr(VI).     

Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations

A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 m channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz.     

Effect of V cut in perforated twisted tape insert on heat transfer and fluid flow behavior of tube flow: An experimental study

ABSTRACT

Present study investigates the heat transfer and friction characteristics of heat exchanger tube fitted with perforated twisted tape (PTT) insert having V cuts. A copper tube of 1 m length and 0.032 m inner diameter is used as test section to collect the experimental data by varying the twist ratio of PTT from 2 to 6 for the Reynolds number range of 2,700–23,400. V cuts are introduced in the PTT and the V-cut relative pitch ratio is varied from 1 to 2. The maximum thermo-hydraulic performance parameter is found to be 1.58.     

Ion implantation for semiconductor processing

The potential advantages of ion implantation have been exploited in virtually every kind of semiconductor device. Several commercially important devices owe their existence to this technique.

Ion implantation provides precise control over the amount of dopant, concentration profile and lateral dimensions in device fabrication. The high degree of uniformity and reproducibility have made it possible to produce sophisticated devices and integrated circuits with high yield and tight tolerances. This is a truly planar process. It is possible to achieve high doping concentrations with relatively lower processing temperatures thereby avoiding lifetime degradation. The process is carried out in an inherently clean environment. A wide range of dopants is available and one is not limited by the particular properties of the substrate. There is great flexibility in choice of masking materials and self-alignment of doped regions in MOS devices is facilitated.

The increasing impact of ion implantation on device technology is discussed with reference to some recent developments. Specific commercially manufactured devices are mentioned.

Ion implantation machines continue to undergo development aimed at higher throughputs and cleaner vacuum. There is the need for greater reliability of machines. Effort is also directed at the development of low cost machines for dedicated applications.

Design of implanted devices continues to be an empirical process in some respects. The ability to accurately predict profile shapes in samples implanted (perhaps through a screen oxide) and subject to complicated post-implantation process steps, would cut down development time and costs.     

Acquisition Time for Ground-to-Satellite Optical Communication System in Weak Atmospheric Turbulence with Spatial Diversity

Abstract

In this article, various issues involved in a ground-to-satellite optical communication link (i.e., acquisition time, uncertainty area, and channel noise) are discussed. Acquisition time of a free-space optical link is evaluated for coherent (sub-carrier BPSK and QPSK) and non-coherent (OOK and -PPM) modulation schemes over weak turbulent channel with transmit diversity. In the analysis, both uncorrelated and correlated beams are considered. It is seen that an increase in transmit diversity order helps to improve the acquisition time, irrespective of turbulence strength in the atmosphere. At high correlation, a marginal change in acquisition time is observed with the increase in diversity order.     

Electric field and temperature dependence of hole mobility in electroluminescent PDY 132 polymer thin films

The current density–voltage ($J\text{–}V$) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope $～1$, and (ii) intermediate and high electric field region II: non ohmic conduction where slope $～2$. Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, ${\mu }_{p0}$ is $3.7\times 10^{?3}{m}^2/Vs$, ${\mu }_p(0,T)$ is $3.7\times 10^{?8}{m}^2/Vs$, and zero field activation energy (${\Delta }_0$) of 0.48 eV is obtained.     

Electrical resistivity of noble and transition metals using Animalu's model potential

Calculations of the electrical resistivity of several solid noble and transition metals have been carried out using the transition metal model potential proposed by Animalu. It has been found that, except for Cu, Ag and Au, the calculated resistivities of solid transition metals are considerably below the experimental values indicating that the Animalu's model potential fails to account for the electrical resistivities of transition metals. The failure of the Animalu's model potential has been discussed.     

Fabrication and characterization of electrochemical double layer capacitors using ionic liquid-based gel polymer electrolyte with chemically treated activated charcoal electrodes

The present investigation deals with electrochemical double layer capacitors (EDLCs) made up of ionic liquid (IL)-based gel polymer electrolytes with chemically treated activated charcoal electrodes. The gel polymer electrolyte comprising of poly(vinylidine fluoride-co-hexafluropropylene) (PVdF-HFP)–1-ethyl-2,3-dimethyl-imidazolium-tetrafluroborate [EDiMIM][BF₄]–propylene carbonate (PC)–magnesium perchlorate (Mg(ClO₄)₂) exhibits the highest ionic conductivity of ~8.4?×?10^?3?S?cm^?1 at room temperature (~20 °C), showing good mechanical and dimensional stability, suitable for their application in EDLCs. Activation of charcoal was done by impregnation method using potassium hydroxide (KOH) as activating agent. Brunauer–Emmett–Teller (BET) studies reveal that the effective surface area of treated activated charcoal powder (1,515 m²?g^?1) increases by more than double-fold compared to the untreated one (721 m²?g^?1). Performance of EDLCs has been tested using cyclic voltammetry, impedance spectroscopy, and charge–discharge techniques. Analysis shows that chemically treated activated charcoal electrodes have almost triple times more capacitance values as compared to the untreated one.     

Vibration and deflection analysis of thin cracked and submerged orthotropic plate under thermal environment using strain gradient theory

Nonlinear Dynamics - Based on a non-classical plate theory, a nonlinear analytical model is proposed to analyze transverse vibration of thin partially cracked and submerged orthotropic plate in the...