Polytellurophenes

Will polytellurophenes bridge the gap between conjugated polymer and inorganic solid‐state semiconductors? Polytellurophenes are a virtually unexplored class of conjugated polymer. In this paper, the synthetic methodologies that have been used to prepare polytellurophenes are chronicled. The properties of the resulting polymers are discussed and their potential for use as electronic materials is evaluated. It is far too early to know if these materials will lead to a useful class of thin‐film semiconductors, however some key challenges associated with their synthesis and implementation are outlined. These challenges will need to be addressed as the conjugated polymer research community begins to utilize this area of the periodic table.

     

Online LC-MS-MS process monitoring for optimization of biological treatment of wastewater containing azo dye concentrates

A biological high-performance treatment process comprising two 40-L reactor compartments has been developed for purification and decoloration of concentrated textile wastewater containing up to 15 g L⁻¹ reactive dyestuff. The decoloration rate of 95% meets the requirements of German legislation for textile wastewater treatment. Successful process development and optimization was achieved by use of high-performance liquid chromatography, with diode-array and electrospray tandem mass spectrometric (LC-ESI-MS-MS) detection, coupled with inline microfiltration membrane-sampling devices, applied online to bioreactors as a process analytical tool for the first time. The optimum process performance was found by correlation of dye and decoloration product-specific concentrations with summary properties such as redox potential and dissolved oxygen content. Details of the degradation and decoloration mechanism for the azo dye reactive black 5 was revealed by using mass spectrometry for structure elucidation.     

Rate constants and H atom branching ratios of the gas-phase reactions of methylidyne CH(X2Pi) radical with a series of alkanes

The reactions of the CH radical with several alkanes were studied, at room temperature, in a low-pressure fast-flow reactor. CH(X2Pi, v = 0) radicals were obtained from the reaction of CHBr(3) with potassium atoms. The overall rate constants at 300 K are (0.76 +/- 0.20) x 10(-10) [Fleurat-Lessard, P.; Rayez, J. C.; Bergeat, A.; Loison, J. C. Chem. Phys. 2002, 279, 87],1 (1.60 +/- 0.60) x 10(-10)[Galland, N.; Caralp, F.; Hannachi, Y.; Bergeat, A.; Loison, J.-C. J. Phys. Chem. A 2003, 107, 5419],2 (2.20 +/- 0.80) x 10(-10), (2.80 +/- 0.80) x 10(-10), (3.20 +/- 0.80) x 10(-10), (3.30 +/- 0.60) x 10(-10), and (3.60 +/- 0.80) x 10(-10) cm3 molecule(-1) s(-1), (errors refer to +/-2sigma) for methane, ethane, propane, n-butane, n-pentane, neo-pentane, and n-hexane respectively. The experimental overall rate constants correspond to those obtained using a simple classical capture theory. Absolute atomic hydrogen production was determined by V.U.V. resonance fluorescence, with H production from the CH + CH4 reaction being used as a reference. Observed H branching ratios were for CH4, 1.00[Fleurat-Lessard, P.; Rayez, J. C.; Bergeat, A.; Loison, J. C. Chem. Phys. 2002, 279, 87];1 C(2)H(6), 0.22 +/- 0.08 [Galland, N.; Caralp, F.; Hannachi, Y.; Bergeat, A.; Loison, J.-C. J. Phys. Chem. A 2003, 107, 5419];2 C(3)H(8), 0.19 +/- 0.07; C(4)H(10) (n-butane), 0.14 +/- 0.06; C(5)H(12) (n-pentane), 0.52 +/- 0.08; C(5)H(12) (neo-pentane), 0.51 +/- 0.08; C(5)H(12) (iso-pentane), 0.12 +/- 0.06; C(6)H(14) (n-hexane), 0.06 +/- 0.04.     

Interatomic electronic decay driven by nuclear motion

The interatomic electronic decay after inner-valence ionization of a neon atom by a single photon in a neon-helium dimer is investigated. The excited neon atom relaxes via interatomic Coulombic decay and the excess energy is transferred to the helium atom and ionizes it. We show that the decay process is only possible if the dimer's bond stretches up to 6.2 ?, i.e., to more than twice the equilibrium interatomic distance of the neutral dimer. Thus, it is demonstrated that the electronic decay, taking place at such long distances, is driven by the nuclear motion.     

The algorithmic beauty of plant roots – an L-System model for dynamic root growth simulation

Understanding the impact of root architecture on plant resource efficiency is important, in particular, in the light of upcoming shortages of mineral fertilizers and changed environmental conditions. In the 1950s, a great number of root systems of European cultivated plants were excavated and studied by L. Kutschera (1960). Her work gave enormous insight into the variety of root system architectures and helped to realize the importance of belowground processes to plant productivity. We analysed the resulting hand drawings by using mathematical modelling and found root system parameters for a newly developed parametric L-System model. In this way we were able to first reproduce the illustrations, second computationally analyse root system traits and finally access the dynamic root architecture development.     

Probing quantum-vacuum geometrical effects with cold atoms

The lateral Casimir-Polder force between an atom and a corrugated surface should allow one to study experimentally nontrivial geometrical effects in the electromagnetic quantum vacuum. Here, we derive the theoretical expression of this force in the scattering approach. We show that large corrections to the "proximity force approximation" could be measured using present-day technology with a Bose-Einstein condensate used as a vacuum field sensor.     

Single quantum dot nanolaser

Recent theoretical and experimental progress on nanolasers is reviewed with a focus on the emission properties of devices operating with a few or even an individual semiconductor quantum dot as a gain medium. Concepts underlying the design and operation of these devices, microscopic models describing light‐matter interaction and semiconductor effects, as well as recent experimental results and lasing signatures are discussed. In particular, a critical review of the “self‐tuned gain” mechanism which gives rise to quantum‐dot mode coupling in the off‐resonant case is provided. Furthermore recent advances in the modeling of single quantum dot lasers beyond the artificial atom model are presented with a focus on the exploration of similarities and differences between the atomic and semiconductor systems.