Fixed Point Theorems on Product Topological Spaces and Applications

A new collectively fixed point theorem for a family of set-valued mappings defined on product spaces of non-compact topological spaces without linear structure is proved and some special cases are also discussed. As applications, some non-empty intersection theorems of sets with convex sections and equilibrium existence theorem of abstract economies are obtained under much weaker assumptions. Our results includes a number of known results as many special cases.     

Kinetics of phenyl radical reactions with propane,n‐butane,n‐hexane,and n‐octane: Reactivity of C6H5 toward the secondary C?H bond of alkanes

The kinetics of C₆H₅ reactions with n‐C_nH_2n+2 (n = 3, 4, 6, 8) have been studied by the pulsed laser photolysis/mass spectrometric method using C₆H₅COCH₃ as the phenyl precursor at temperatures between 494 and 1051 K. The rate constants were determined by kinetic modeling of the absolute yields of C₆H₆ at each temperature. Another major product C₆H₅CH₃ formed by the recombination of C₆H₅ and CH₃ could also be quantitatively modeled using the known rate constant for the reaction. A weighted least‐squares analysis of the four sets of data gave k (C₃H₈) = (1.96 ± 0.15) × 10¹¹ exp[?(1938 ± 56)/T], and k (n‐C₄H₁₀) = (2.65 ± 0.23) × 10¹¹ exp[?(1950 ± 55)/T] k (n‐C₆H₁₄) = (4.56 ± 0.21) × 10¹¹ exp[?(1735 ± 55)/T], and k (n?C₈H₁₈) = (4.31 ± 0.39) × 10¹¹ exp[?(1415 ± 65)T] cm³ mol^?1 s^?1 for the temperature range studied. For the butane and hexane reactions, we have also applied the CRDS technique to extend our temperature range down to 297 K; the results obtained by the decay of C₆H₅ with CRDS agree fully with those determined by absolute product yield measurements with PLP/MS. Weighted least‐squares analyses of these two sets of data gave rise to k (n?C₄H₁₀) = (2.70 ± 0.15) × 10¹¹ exp[?(1880 ± 127)/T] and k (n?C₆H₁₄) = (4.81 ± 0.30) × 10¹¹ exp[?(1780 ± 133)/T] cm³ mol^?1 s^?1 for the temperature range 297‐‐1046 K. From the absolute rate constants for the two larger molecular reactions (C₆H₅ + n‐C₆H₁₄ and n‐C₈H₁₈), we derived the rate constant for H‐abstraction from a secondary C? H bond, k_s?CH = (4.19 ± 0.24) × 10¹⁰ exp[?(1770 ± 48)/T] cm³ mol^?1 s^?1. © 2003 Wiley Periodicals, Inc. Int J Chem Kinet 36: 49–56, 2004     

A new VOF‐based numerical scheme for the simulation of fluid flow with free surface. Part II: application to the cavity filling and sloshing problems

Finite element analysis of fluid flow with moving free surface has been performed in 2‐D and 3‐D. The new VOF‐based numerical algorithm that has been proposed by the present authors (Int. J. Numer. Meth. Fluids, submitted) was applied to several 2‐D and 3‐D free surface flow problems. The proposed free surface tracking scheme is based on two numerical tools; the orientation vector to represent the free surface orientation in each cell and the baby‐cell to determine the fluid volume flux at each cell boundary. The proposed numerical algorithm has been applied to 2‐D and 3‐D cavity filling and sloshing problems in order to demonstrate the versatility and effectiveness of the scheme. The proposed numerical algorithm resolved successfully the free surfaces interacting with each other. The simulated results demonstrated applicability of the proposed numerical algorithm to the practical problems of large free surface motion. It has been also demonstrated that the proposed free surface tracking scheme can be easily implemented in any irregular non‐uniform grid systems and can be extended to 3‐D free surface flow problems without additional efforts. Copyright © 2003 John Wiley & Sons, Ltd.     

Generalized Equilibrium Problems and Generalized Complementarity Problems

From a general minimax inequality or an abstract lopsided saddle-point theorem, we deduce general Karamardian-type equilibrium theorems and generalized complementarity theorems. Our new results extend a number of well-known earlier works of many authors.     

Experimental verification of drop/impact simulation for a cellular phone

Conducting drop tests to investigate impact behavior and identify failure mechanisms of small-size electronic products is generally expensive and time-consuming. Nevertheless, strict drop/impact performance criteria for hand-held electronic products such as cellular phones play a decisive role in the design because they must withstand unexpected shocks. The design of product durability on impact has heavily relied on the designer's intuition and experience. In this study, a reliable drop/impact simulation for a cellular phone is carried out using the explicit code LS-DYNA. Subsequently globallocal experimental verification is accomplished by means of high-speed photography and impact response measurement. Using this methodology, we predict potential damage locations in a cellular phone and compare them with real statistical data. It is envisaged that development of a reliable methodology of drop/impact simulation will provide us with a powerful and efficient vehicle for improvement of the design quality and reduction of the product development cycle.     

Fixed Point Theorems for New Classes of Multimaps

A closed multimap T : X ? X having the KKM property has a fixed point whenever X is a compact convex set satisfying a certain topological condition. Our new result properly generalizes a known one due to W. K. Kim [4].     

Numerical methods for computations of nonequilibrium hypersonic flow around bodies

In this paper we present numerical methods for computations of nonequilibrium hypersonic flow of air around bodies including chemical reaction effects and present numerical result of the flow over concave corners. We developed implicit finite difference method to overcome numerical difficulties associated with the lack of resolution behind the shock and near the body. Using our method we were able to find details of the flow properties near the shock and body and were able to continue the computation of the flow for a long distance from the corner of the body.     

In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films

The nucleation and grain growth of the Ge₂Sb₂Te₅ (GST) thin films were studied using high voltage electron microscope operated at 1250 kV. As a result, we have found that 2 nm-sized nucleus forms as a cluster which atoms are arranged regularly at the stage of nucleation prior to the formation of grains having crystal structure. The high-resolution transmission electron microscopy study and fast-Fourier transformations revealed that coexistence of face-centered-cubic (FCC) and hexagonal structure occurs, and formation of twin defect is found in the hexagonal structure during the grain growth as the annealing temperature is increased. GST grain having the hexagonal structure grow from the surface, and the growth proceeded perpendicular to the [0 0 0 1], namely the path parallel to the (0 0 0 1) plane. Consequently, grain growth to a large-scale result in a lengthened shape.