Scattering of electrons by charged dislocations in InSb-type semiconductors

Electron scattering by parallel arrays of charged dislocations in InSb-type semiconductors is considered. In the theoretical approach the nonparabolic structure of the conduction band of the semiconductors considered is taken into account in the approximation of a simplified Kane's band model. The effect of screening by free electrons of the dislocation charge is also included in the theory. The calculated relaxation time of the electrons is used to derive a formula for the dislocation-limited electron mobility in the semiconductors. Some examples of calculations of the charged dislocation-limited mobility as a function of the electron concentration with the dislocation density as a parameter are given for n-InSb at 77 K and 300 K. The ratio of the magnitudes of the charged dislocation-limited mobility to the ionized impurity-limited mobility in n-type material at low temperatures is also discussed.     

Black hole uniqueness from a hidden symmetry of Einstein's gravity

A theorem is proven that the only possible exterior solution for a pseudostationary, rotating, electrovacuum black hole with nondegenerate event horizon is the Kerr-Newman solution withM ²-J²/M²-Q²>0. A special role played in the proof of this theorem by the hidden symmetry groupSU(1, 2) of Einstein's equations is established.This essay received the third award from the Gravity Research Foundation for the year 1983 [Ed.].     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Dynamical dark energy models – dynamical system approach

We study the Friedmann-Robertson-Walker model with dynamical dark energy modelled in terms of the equation of state p _X = w _X (a(z)) ρ _X in which the coefficient w _X is parameterized by the scale factor a or redshift z. We use methods of qualitative analysis of differential equations to investigate the space of all admissible solutions for all initial conditions on the two-dimensional phase plane. We show advantages of representing this dynamics as a motion of a particle in the one-dimensional potential V(a). One of the features of this reduction is the possibility of investigating how typical big rip singularities are in the future evolution of the model. The properties of potential function V can serve as a tool for qualitative classification of all evolution paths. Some important features like resolution of the acceleration problem can be simply visualized as domains on the phase plane. Then one is able to see how large is the class of solutions (labelled by the inset of the initial conditions) leading to the desired property.     

Classical dynamics of the Bianchi IX model with timelike singularity

We study the dynamics of the vacuum Bianchi IX model with timelike singularity and compare it with the dynamics of the Bianchi IX model with cosmological singularity. We show that differences in the signs of some terms in the set of equations specifying the dynamics of both spacetimes lead to significant differences in their properties.     

How should one define a (weak) crystal?

We compare two proposals for the study of positional long-range order: one in terms of the spectrum of the translation operator, the other in terms of the Fourier spectrum. We point out that only the first one allows for the consideration of molecular, as opposed to atomic, (weakly) periodic structures. We illustrate this point on the Thue-Morse system.