基于COSM的三维显微图像复原算法研究

光学分层显微成像技术(COSM)不仅可用于去除非聚焦层杂散光的影响以及噪声的干扰,而且能复原样本的清晰三维像,将成为提取微流体的三维温度和速度场分布信息的有效工具.本文研究了基于已知点扩展函数的6种COSM成像算法,详细讨论了6种COSM成像算法的原理和实现,构造了三维样本图像和点扩展函数模型,并对复原结果进行了分析....     

单纵模671nm红光激光器

利用全波片和Nd:YVO4激光器的偏振特性构成双折射滤光片,使用I类临界相位匹配LBO作为倍频晶体,在注入泵浦功率2.7W的情况下获得149mW的671nm单纵模红光输出,光-光转换率5.6%,该结构简单、紧凑,适合用于中低功率激光器。     

验证辐射强度与距离平方反比率的实验

利用Nal闪烁谱仪测量了在探测器与放射源间某个距离下对应的计数率.对测量的数据分别利用等精度最小二乘法和未知参数逼近法进行了处理,观察到在某些未知参数下,最小二乘法引起的误差很大,利用未知参数逼近法得到的值能和真实值较好接近,从而验证了辐射强度与距离平方反比率.     

Nonlinear-Ion-Acoustic-Wave Instability, Threshold, Half Width of Trapped Region and Transition Region

Nonlinear Landau damping of ion acoustic wave (IAW) is one of the most important phenomena in the ionosphere and in space and laboratory plasma as well. The instability growth rate of the IAW with electron drift, the amplitude threshold for exciting the nonlinear effects, the half widths of the trapped region with the trapped electrons are studied experimentally. Under the experimental conditions, it is shown that there is a frequency range of 140--160 kHz, within which the growth rate has the largest value of about 6×10⁴--1.5×10⁵ s^-1. We obtain the transitional region width caused by collisions theoretically and experimentally, for the first time to our knowledge. The experimental results are in good agreement with the theoretical prediction.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

制作高密度衍射光栅的光电式刻划控制的研究

高精度的光电式刻划控制系统是制作高密度母光栅的关键技术,以光栅干涉仪为控制核心,设计了光电式的光栅刻划控制系统,并对可能产生的加工误差进行了初步的分析;采用该控制系统的光栅刻划实践表明,所设计的光电式刻划控制系统已完全达到了高密度衍射光栅的亚微米栅距分度要求。     

基于图像处理的人眼注视方向检测研究

提出了一种基于图像处理技术以实现人眼注视方向的实时检测方法。研究了人眼瞳孔、眼眶的位置、形状及其与视线方向的关系。以人眼注视不同方向时,眼睛瞳孔位置和眼眶形状产生的差异为基础,通过对所拍摄的眼部图片进行实时处理与分析,实现了对人眼注视方向的实时检测。实验结果表明了该方法的可行性及有效性。     

多束速调管的增益带宽

 研究了M个束、N个共振腔的多束速调管(MBK)的增益和带宽，得到了描述小信号增益和带宽与器件结构参数和电子束参数关系的公式，给出了在不同参数下增益随频率的变化曲线。分析了多腔对增益，多束对带宽的影响。计算结果表明：多腔可以提高增益；多束可以降低Q值，从而可以增中带宽，带宽增加工了3.6%，还可以提高增益；对于MBK，频率交叉调谐对增加带宽不如频率调谐好；空间电荷波只对增益有影响，对带宽没有影响。最后，预估一种L带多束速调管的增益带宽为8.1%。