强壮前沟藻的后向散射特性研究

基于2012年7月藻类培养实验期间的实测生物-光学数据,分析了强壮前沟藻的后向散射特性及其影响因素。结果表明,强壮前沟藻的后向散射系数值具有光谱变化性,并随叶绿素浓度的升高而增大,两者之间呈很好的幂函数关系,相关系数R2最小值可达0.96;此外,由于色素的吸收作用,使得其光谱形状会随叶绿素的变化而变化;同时获得的后向散射比率620 nm处的变化范围在0.006 4～0.011 6之间;总体上,各波段颗粒物后向散射比率也呈现随叶绿素浓度增加而增大的趋势,但在高叶绿素浓度下,这种变化规律并不明显,并且就其光谱形状而言,无论叶绿素浓度高低,其光谱形状始终保持一致;颗粒密度是影响后向散射比率的主要因素之一,两者之间呈幂函数关系,相关系数r在620 nm处高达0.98。     

气相色谱和原子荧光联用测定生物和沉积物样品中甲基汞

提出了一种气相色谱和原子荧光在线联用测定甲基汞的方法。对气相色谱和原子荧光的在线联用进行了设计,优化了进样口温度、载气流速、尾吹气流量及氩气流量等实验条件。在最佳仪器条件下,甲基汞(MMC)和乙基汞(EMC)的绝对检出限(3σ)可达0.005 ng。对于10 ng·mL-1 MMC和EMC标准溶液,连续5次进样测得精密度(RSD)分别为2.5％和1.3％。对标准参考物(DORM-2)的分析结果与标准值一致。两个沉积物中甲基汞的加标回收率分别为70％和77％。方法准确、灵敏,可应用于生物和沉积物样品中甲基汞的分析。     

Yb原子奇宇称受扰里德堡系n^1P1,n^3P1能级自然辐射寿命的研究

通过激光与原子束相互作用，三步激发及时间分辨光谱术，测量了Ｙｂ原子奇宇称受扰里德堡系６ｓｎｐ＾１，３Ｐ１２１个能级和两上干扰能级的自然辐射寿命，分析了各种因素对测量值的影响。     

稀有类铥铋离子辐射光谱的相对论识别

用全相对论多组态自洽场方法,计算了高离化类铥铋原子BiXV的1s、2s、2p-、2p、3s、3p-、3p、3d-、3d、4s、4p-、4p、4d-、4d、4f-、4f、5s、5p-、5p、5d-、5d、5f-、5f、5g-、5g、6s、6p-、6p、6d-、6d、6f-、6f、6g-、6g、7s、7p-、7p、7d-、7d、7f-、7f、7g-、7g、8s、8p-、8p、8d-、8d轨道的2249个精细结构能级和辐射寿命以及其他各种跃迁参数.能级和波长的计算值和实验值符合得好.另外还发现了一些辐射寿命较长的亚稳态能级.     

顶色辅助的人工色模型下顶夸克极化效应的研究

在顶色辅助的人工色(TC2)理论下, 在强子对撞机上研究了顶夸克-反顶夸克对的产生过程中顶夸克的极化效应, 在计算过程中, 运用了MRS set A'部分子分布函数和螺旋度投影算符的方法. 研究结果表明: 在Tevatron上顶夸克的极化效应太小不可探测; 参数选取得当, 该效应在LHC上可以探测到, 其值可达16%. 因此, 顶夸克的极化效应提供了一种切实可行的检验顶色辅助的人工色模型的方法.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

The spin-dependent transport properties in the non-collinear pattern of series of δ-magnetic barriers are studied by using scattering theory and Green＇s function methods. The Green＇s function is obtained by using distorted wave approach and the scattering matrix is related by Fisher-Lee relationship. In addition to reproducing the results of Papp＇s and Xu＇s in parallel and antiparallel configurations, we also obtain further results, where arbitrary orientations of the magnetic barriers and arbitrary number of barriers are included. The main finding of our results is that the signs of polarizations can be switched around some ＂geometric unpolarized windows＂. The well-known antiparallel configuration has no such characteristics. Furthermore, we discuss spin-related partial densities of states in both polarized and unpolarized structures.     

New Operator Identities and Combinatorics Studied by Virtue of IWOP Technique

Using the coherent state representation we derive some new operator identities and study some mathematical relations in combinatorics. The technique of integral within an ordered product (IWOP) of operators plays an essential role in realizing our goal.     

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

The spin-dependent transport properties in the non-collinear pattern of series of δ-magnetic barriers are studied by using scattering theory and Green‘s function methods. The Green‘s function is obtained by using distorted wave approach and the scattering matrix is related by Fisher-Lee relationship. In addition to reproducing the results of Papp‘s and Xu‘s in parallel and antiparallel configurations, we also obtain further results, where arbitrary orientations of the magnetic barriers and arbitrary number of barriers are included. The main finding of our results is that the signs of polarizations can be switched around some “geometric unpolarized windows“. The well-known antiparallel configuration has no such characteristics. Furthermore, we discuss spin-related partial densities of states in both polarized and unpolarized structures.     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.