托卡马克真空室内线圈水冷管道接头强化二次流的数值研究

基于计算流体力学(CFD)理论,研究了不同曲率半径的螺旋导流片的托卡马克真空室内线圈水冷管道接头。利用湍流数值模拟方法,分析了线圈管道接头导流片曲率半径比、冷却水入口流速对线圈管道内流体平均雷诺数分布的影响。结果表明,不同导流片曲率半径比的线圈管道内的流体雷诺数分布曲线相似,平均雷诺数随入口流速的增加而增大,管道接头出口雷诺数随导流片曲率半径比的增大而减小,导流片曲率半径比小的管接头更适用于线圈水冷曲线管的二次流强化。此外,还为导流片曲率半径比为0.2的管接头拟合了管接头出口雷诺数与入口流速的关系式,为进一步研究类似于托卡马克真空室内线圈管道的曲线管接头的二次流强化提供理论基础。     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

一个二维梯状化合物[Ni(μ1，5-dca)2(en)]n的合成，结构和磁性(英)

A new nickel(Ⅱ)-dicyanamide compound, [Ni(dca)₂(en)]_n (1) (dca=dicyanamide anion, [N(CN)₂]^-); en=ethylene diamine), has been synthesized and its structure has been determined by single crystal X-ray diffraction analysis. The crystal is monoclinic, space group P2₁/n with unit cell dimensions: a=0.694 3(1) nm, b=1.041 5(2) nm, c=1.4132(2) nm, and β=90.381°, Z=4, V=1.011 0(3) nm³. In this compound, the adjacent nickel atoms are connected by dca all in μ_1，5-bridging mode to form ladder-like units, which are linked with double dca bridges to generate a regular infinite stair-like structure. Temperature-dependent magnetic susceptibility was also characterized for this compound. CCDC: 208276.     

柱面微通道板的制备及其性能研究

针对未来空间天文学应用的超分辨率光谱成像仪器的需求,对低噪声柱面微通道板（MCP）的制备方法及其性能进行了研究. 提出了一种将光学抛光与热成型相结合的新的柱面MCP制备方法,利用不含放射性元素的低噪声MCP玻璃,制备出曲率半径为400mm、尺寸为30mm′46mm、长径比为80:1、通道直径12.5mm、通道间距15mm的柱面MCP,并将其与感应电荷楔条形阳极（WSA）组成光子计数探测器,对其暗计数率、分辨率进行了检测,暗计数率约为0.1counts/cm2×s.     

焊后热处理对聚变堆用奥氏体不锈钢MAG焊焊缝金属冲击韧性的影响

对聚变堆用316LN奥氏体不锈钢熔化极活性气体保护电弧焊(MAG焊)接接头进行不同温度的热处理,并在液氮温度下进行夏比冲击试验。利用光学显微镜、扫描电镜、EDS分析等研究了热处理温度对接头微观组织、断口形貌及析出物的影响。结果表明,873K热处理可以显著提高焊缝金属冲击韧性,但随着热处理温度的上升,焊缝金属逐渐出现沿着晶界分布的析出物,韧性逐渐下降。断口均为延性断裂,但随着热处理温度的升高,韧窝变浅、数量变少。韧窝底部存在球状析出和不规则状析出,球状析出在焊接过程中产生,不因热处理温度而变化,不规则析出随着热处理温度的升高逐渐增多。焊材中的Mo含量过高导致焊缝金属中Mo在晶界大量偏聚,促进了σ相的析出,当σ相在晶界形成连续分布后,焊缝金属冲击韧性显著下降。     

Dynamics of strong-field double ionization of H_2 in co-rotating two-color circularly polarized laser fields

Double ionization of H_2 in a co-rotating two-color circularly polarized(TCCP) laser field is theoretically investigated. By changing the ratio of electric field peak amplitudes of the TCCP laser pulses, the double ionization probability as a function of the laser intensity shows a clear knee structure, which is suppressed significantly in the case of the atom. Due to the large spatial range of the electronic initial distribution, with the analysis of classical trajectories of ionized electrons, it is found that the ionization of the electron in the farther distance increases the probability of recollision. Furthermore, the yield of nonsequential double ionization created by the recollision can be enhanced by controlling the amplitude ratio of the TCCP laser field.     

量子垒生长速率对InGaN基绿光LED性能的影响

利用MOCVD技术在图形化Si(111)衬底上生长了InGaN/GaN绿光LED外延材料。在GaN量子垒的生长过程中,保持NH₃流量不变,通过调节三乙基镓(TEGa)源的流量来改变垒生长速率,研究了量子垒生长速率对LED性能的影响。使用二次离子质谱仪(SIMS)和荧光显微镜(FLM)分别对量子阱的阱垒界面及晶体质量进行了表征,使用电致发光测试系统对LED光电性能进行了表征。实验结果表明,垒慢速生长,在整个测试电流密度范围内,外量子效率(EQE)明显提升。我们认为,小电流密度下,EQE的提升归结为量子阱晶体质量的改善;而大电流密度下,EQE的提升则归结为阱垒界面陡峭程度的提升。     

六方相LaOF∶Er,Yb的上转换发光及温度传感特性

氟氧化物兼有氧化物优异的稳定性和氟化物的低声子能量,是上转换发光材料的一种热点基质材料,因而研究六方相LaOF∶Er,Yb的上转换发光性能及其温度特性具有重要意义。本文采用水热法制备了六方相LaOF∶Er,Yb荧光材料,通过X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱对其结构和上转换荧光性能进行表征。实验结果表明,水热法120℃得到六方相LaF₃,经800℃和1 000℃退火后分别形成四方相LaOF和六方相LaOF。980 nm激发下,六方相LaOF∶Er,Yb中Yb³⁺与Er³⁺存在能量传递,通过双光子吸收产生绿光和红光的上转换荧光,并且Yb³⁺与Er³⁺的最佳浓度分别为3%和1%。最后研究了六方相LaOF∶Er,Yb在温度传感方面的应用,其在150～400 K温度范围的相对灵敏度和绝对灵敏度分别为0.037 K^-1和0.004 3 K^-1。该材料具有优异的温度传感特性,对荧光温度传感器件的设计和应用具有指导意义。     

工质对微通道沸腾液膜瞬态变化的影响

本文采用去离子水和无水乙醇两种工质,利用微通道流动沸腾同步测量实验系统,研究了液膜厚度的瞬态变化规律,实验发现流动沸腾形成的初始液膜厚度在毛细数Ca很宽的范围内都遵循Taylor流动原理;液膜形成后,在蒸发和蒸汽流动携带的耦合作用下,厚度迅速减薄直至蒸干;由于水的汽液黏度比小,速度梯度小,剪切作用带来的液膜厚度减少量小,且水的汽化潜热大,吸收相同热量时蒸发量小,导致水的液膜厚度变化斜率较小,通过理论分析提出了沸腾液膜厚度变化的计算模型,计算结果与实验结果的误差小于20%。     

无序层状系统的电导率

本文运用顶角的Post-CPA方法研究了无序层状系统的维数跨越效应,层间耦合t的强弱决定了系统的有效维数。对于耦合的临界值t_c,Anderson转变发生。我们求出了系统的玻耳兹曼电导率、对应于最大交叉顶角的动力学电导率和直流电导率以及临界点附近的局域长度。 关键词：