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911.
The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiCp composite were measured. The optical parameters and both conductivities decreased with the increase of SiCp particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiCp particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiCp particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiCp composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiCp 15 vol% are of metallic character. Modelling of the interaction of the CO2 laser radiation with AlSi-alloy/SiCp 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.  相似文献   
912.
We use the classical and nonclassical methods to obtain symmetry reductions and exact solutions of the (2+1)-dimensional integrable Calogero–Bogoyavlenskii–Schiff equation. Although this (2+1)-dimensional equation arises in a nonlocal form, it can be written as a system of differential equations and, in potential form, as a fourth-order partial differential equation. The classical and nonclassical methods yield some exact solutions of the (2+1)-dimensional equation that involve several arbitrary functions and hence exhibit a rich variety of qualitative behavior.  相似文献   
913.
The facility layout problem is concerned with finding the most efficient arrangement of a given number of departments with unequal area requirements within a facility. The facility layout problem is a hard problem, and therefore, exact solution methods are only feasible for small or greatly restricted problems. In this paper, we propose a spring-embedding approach that unlike previous approaches results in a model that is convex. Numerical results demonstrating the potential of our model and the efficiency of our solution procedure are presented.  相似文献   
914.
Whereas there exists a mathematical proof for one-site breathers stability, and an unpublished one for two-site breathers, the methods for determining the stability properties of multibreathers rely on numerical computation of the Floquet multipliers or on the weak nonlinearity approximation leading to discrete nonlinear Schrödinger equations. Here we present a set of multibreather stability theorems (MST) that provides a simple method to determine multibreathers stability in Klein–Gordon systems. These theorems are based in the application of degenerate perturbation theory to Aubry’s band theory. We illustrate them with several examples.  相似文献   
915.
Dynamics of Multisection Semiconductor Lasers   总被引:1,自引:0,他引:1  
We consider a mathematical model (the so-called traveling-wave system) which describes longitudinal dynamical effects in semiconductor lasers. This model consists of a linear hyperbolic system of PDEs, which is nonlinearly coupled with a slow subsystem of ODEs. We prove that a corresponding initial-boundary value problem is well posed and that it generates a smooth infinite-dimensional dynamical system. Exploiting the particular slow-fast structure, we derive conditions under which there exists a low-dimensional attracting invariant manifold. The flow on this invariant manifold is described by a system of ODEs. Mode approximations of that system are studied by means of bifurcation theory and numerical tools.  相似文献   
916.
917.
The Golden rule expression for x-ray absorption spectra (XAS) is typically calculated within a one-particle (quasiparticle) approximation and generally leads to good agreement between theory and experiment. The fact that a quasiparticle approximation works fairly well is surprising, since it neglects satellite excitations and intrinsic losses due to a suddenly created core-hole. The resolution of this paradox requires physics beyond the independent particle approximation. This is discussed here using an effective Green's function formulation based on a quasi-boson model that takes interference between inelastic losses into account. This approach shows that inelastic excitations such as multi-electron excitations tend to be suppressed, and that the XAS is given by a broadened quasiparticle particle approximation, together with weak satellite structure and edge singularity effects.  相似文献   
918.
We develop two implementable algorithms, the first for the solution of finite and the second for the solution of semi-infinite min-max-min problems. A smoothing technique (together with discretization for the semi-infinite case) is used to construct a sequence of approximating finite min-max problems, which are solved with increasing precision. The smoothing and discretization approximations are initially coarse, but are made progressively finer as the number of iterations is increased. This reduces the potential ill-conditioning due to high smoothing precision parameter values and computational cost due to high levels of discretization. The behavior of the algorithms is illustrated with three semi-infinite numerical examples.  相似文献   
919.
It is shown that there is a function g on the natural numbers such that a partial Steiner triple system U on u points can be embedded in a Steiner triple system V on ν points, in such a way that all automorphisms of U can be extended to V, for every admissible ν satisfying ν > g(u). We find exponential upper and lower bounds for g. © 2005 Wiley Periodicals, Inc. J Combin Designs.  相似文献   
920.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.  相似文献   
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