Amorphous chalcogenide AgSbS2 films prepared by pulsed laser deposition

The pulsed laser deposition technique has been applied to prepare amorphous ternary AgSbS films. The films were prepared from AgSbS₂ bulk glass using a KrF excimer laser. The composition of prepared films according to the results of the energy dispersive X-ray analysis and the Rutherford backscattering was close to bulk one. Optical transmission and spectral dependence of the refractive index proved the good optical quality of the films. The Ar⁺ ion laser dot exposures of the films show a potential applicability of the films as a new type of optical recording material. PACS 78.66.Jg; 81.15.Fg; 81.40.Wx     

Polarization locking and nonparaxial spatial solitons in media with electronic Kerr nonlinearity

The polarization structure of nonparaxial spatial solitons in a transparent medium with the electronic mechanism of Kerr nonlinearity is studied theoretically. It is demonstrated analytically in the weak nonparaxiality approximation that the regime of polarization locking, in which all the field components have the same propagation constant, is the only stable regime. Estimates of the rate of transition of the initial metastable regime of rotation of the polarization ellipse to the regime of polarization locking are presented. Based on a numerical solution of the nonlinear Maxwell equations, the presence of the nonparaxial regime of polarization locking is confirmed and the main characteristics of the corresponding spatial solitons are obtained.     

Structure and morphology of laser-ablated WO3 thin films

The structure and surface morphology of WO₃ thin films deposited by a laser-ablation technique have been found to be strongly dependent on the deposition conditions and the nature of the substrate. By precisely controlling the substrate temperature and the oxygen partial pressure, amorphous, polycrystalline, nano-crystalline and iso-epitaxial WO₃ thin films were successfully grown. The structure and surface morphological features of the films from X-ray diffraction and atomic force microscopy data are described in relation to the deposition conditions. PACS 81.15.Fg; 68.55.-a; 68.37.Ps     

Creating, detecting and locating ultracold molecules in a surface trap

Ultracold molecules have been produced by photoassociation of Cs atoms trapped in a mirror magneto-optical trap. The molecules were detected by resonantly enhanced multi-photon ionization followed by time-of-flight mass spectroscopy. The time-of-flight ofatomic and molecular ions was investigated in the presence of a dc bias voltageapplied to the conducting mirror. This technique provides a new tool for determining the distance between the cold molecules and the mirror surface. This revised version was published online in August 2005 with a corrected cover date.     

Glass transitions and mixed phases in block SBS

Differential scanning calorimetry (DSC) does not allow for easy determination of the glass‐transition temperature (T_g) of the polystyrene (PS) block in styrene–butadiene–styrene (SBS) block copolymers. Modulated DSC (MDSC), which deconvolutes the standard DSC signal into reversing and nonreversing signals, was used to determine the (T_g) of both the polybutadiene (PB) and PS blocks in SBS. The T_g of the PB block was sharp, at ?92 °C, but that for the PS blocks was extremely broad, from ?60 to 125 °C with a maximum at 68 °C because of blending with PB. PS blocks were found only to exist in a mixed PS–PB phase. This concurred with the results from dynamic mechanical analysis. Annealing did not allow for a segregation of the PS blocks into a pure phase, but allowed for the segregation of the mixed phase into two mixed phases, one that was PB‐rich and the other that was PS‐rich. It is concluded that three phases coexist in SBS: PB, PB‐rich, and PS‐rich phases. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 276–279, 2005     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

Optimization of in-vacuo template-stripped Pt surfaces via UHV STM

A recently demonstrated [1] in-vacuo template-stripping process is applied to the study of platinum films stripped from ultra-flat silicon-oxide surfaces. Template-stripped (TS) Pt surfaces, prepared with a range of post-deposition annealing times prior to being stripped from the templating surface in an ultra-high vacuum (UHV) environment, are examined by UHV scanning tunneling microscopy (STM). These studies reveal that without post-deposition annealing, TS Pt surfaces are largely made up of poorly-ordered, granular nanostructures undesirable for many applications. The post-deposition annealing treatments explored in the study result in the emergence and continuous growth of large smooth crystallites. Issues with crystallite orientation relative to the TS surface and artefacts arising as a result of the epoxy used in the template-stripping process are presented and discussed in relation to optimizing the template-stripping procedure for specific applications such as self-assembled monolayer (SAM) formation for molecular electronics. PACS 68.37.Ef; 68.47.De; 68.55.Jk; 81.05.Bx; 81.15.Ef     

Pressure effects in a plastic columnar discotic triphenylene

The effect of hydrostatic pressure on the structure of a plastic columnar discotic triphenylene has been investigated. The goal was to determine whether pressure can be used to modify electronic properties via changes in structural properties of columnar discotics to any significant extent. The findings are that (i) the intra- and inter-columnar distances are reduced in a nearly isotropic fashion, (ii) that the crystal sizes are reduced and (iii) that a transition takes place from a more highly ordered plastic columnar to a less ordered hexagonal columnar state with increasing pressure. The induced decrease of the molecular distances, amounting to 6% for pressures up to 17 kbar, are clearly too small to induce an appreciable modification of the electronic structure and thus opto-electronic properties.     

Unified approach to photo-and electro-production of mesons with arbitrary spins

A new approach to identify the independent amplitudes along with their partial wave multipole expansions, for photo-and electro-production is suggested, which is generally applicable to mesons with arbitrary spin-parity. These amplitudes facilitate direct identification of different resonance contributions.      

Faddeev-Noble Versus Sasakawa-Sawada Equations for the Nuclear Three-Body Coulomb Problem

We compare the efficiency of two Faddeev-type approaches for the nuclear three-body Coulomb problem. The first one is a modification of Noble’s approach, the second one is due to Sasakawa and Sawada. In an integral-equation formulation both of these methods rely on the same Green’s operators and driving terms. The differences lie in the treatment of the long-range Coulomb potentials. Numerical examples show that the modified Faddeev-Noble approach provides for faster convergence.